Inventor · disambiguated record
Chin-Te Kuo
Also filed as: KUO CHIN-TE
15 granted patents·4 pending applications·3 citations·filing 2003–2022
85Inventor score
Top patents by PatentIndex Score
19 records- 0183US10957760B2Semiconductor structure having air gap dielectric and method of preparing the sameNANYA TECHNOLOGY CORP·Filed 2019·Granted Mar 23, 2021·3 cites·11 claims
- 0267US11587885B2Method for fabricating semiconductor device with EMI protection structureNANYA TECHNOLOGY CORP·Filed 2021·Granted Feb 21, 2023·0 cites·7 claims
- 0365US12014986B2Method for preparing semiconductor device structure with conductive plugs of different aspect ratios and manganese-containing lining layerNANYA TECHNOLOGY CORP·Filed 2022·Granted Jun 18, 2024·0 cites·8 claims
- 0465US11895826B2Method for preparing semiconductor device structure with air gapNANYA TECHNOLOGY CORP·Filed 2021·Granted Feb 6, 2024·0 cites·7 claims
- 0564US11417726B2Semiconductor structure having air gap dielectricNANYA TECHNOLOGY CORP·Filed 2020·Granted Aug 16, 2022·0 cites·8 claims
- 0662US11646268B2Semiconductor device structure with conductive plugs of different aspect ratios and manganese-containing liner having different thicknessesNANYA TECHNOLOGY CORP·Filed 2020·Granted May 9, 2023·0 cites·8 claims
- 0761US12178035B2Semiconductor device having protrusion of word lineNANYA TECHNOLOGY CORP·Filed 2022·Granted Dec 24, 2024·0 cites·10 claims
- 0860US12245415B2Method of manufacturing semiconductor device having protrusion of word lineNANYA TECHNOLOGY CORP·Filed 2022·Granted Mar 4, 2025·0 cites·11 claims
- 0959US11417608B2Semiconductor device with EMI protection structure and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Aug 16, 2022·0 cites·12 claims
- 1057US11217591B2Semiconductor device structure with air gap and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2019·Granted Jan 4, 2022·0 cites·12 claims
- 1156US9093471B2Method for forming trench MOS structureNANYA TECHNOLOGY CORP·Filed 2014·Granted Jul 28, 2015·0 cites·10 claims
- 1252US11049715B2Method for manufacturing a semiconductor structureNANYA TECHNOLOGY CORP·Filed 2019·Granted Jun 29, 2021·0 cites·19 claims
- 1347US8912595B2Trench MOS structure and method for forming the sameKUO CHIN-TE·Filed 2011·Granted Dec 16, 2014·0 cites·8 claims
- 1438US8816715B2MOS test structure, method for forming MOS test structure and method for performing wafer acceptance testKUO CHIN-TE·Filed 2011·Granted Aug 26, 2014·0 cites·15 claims
- 1537US8692318B2Trench MOS structure and method for making the sameKUO CHIN-TE·Filed 2011·Granted Apr 8, 2014·0 cites·19 claims
- 1635US2012286402A1Protuberant structure and method for making the sameKUO CHIN-TE·Filed 2011·Application pending·0 cites
- 1735US2012298992A1Test layout structureKUO CHIN-TE·Filed 2011·Application pending·0 cites
- 1834US2005130066A1Method of forming single sided conductor and semiconductor device having the sameFiled 2003·Application pending·0 cites
- 1933US2012288683A1Protuberant structure and method for making the sameKUO CHIN-TE·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →