Inventor · disambiguated record
Chang-Kiang Kuo
Also filed as: KUO CHANG-KIANG
29 granted patents·699 citations·filing 1973–1994
97Inventor score
Top patents by PatentIndex Score
29 records- 0193US4240092ARandom access memory cell with different capacitor and transistor oxide thicknessTEXAS INSTRUMENTS INC·Filed 1976·Granted Dec 16, 1980·54 cites·18 claims
- 0292US4258466AHigh density electrically programmable ROMTEXAS INSTRUMENTS INC·Filed 1978·Granted Mar 31, 1981·58 cites·7 claims
- 0391US4561004AHigh density, electrically erasable, floating gate memory cellTEXAS INSTRUMENTS INC·Filed 1982·Granted Dec 24, 1985·83 cites·6 claims
- 0490US4225945ARandom access MOS memory cell using double level polysiliconTEXAS INSTRUMENTS INC·Filed 1977·Granted Sep 30, 1980·40 cites·9 claims
- 0589US4377818AHigh density electrically programmable ROMTEXAS INSTRUMENTS INC·Filed 1980·Granted Mar 22, 1983·50 cites·3 claims
- 0685US4195357AMedian spaced dummy cell layout for MOS random access memoryTEXAS INSTRUMENTS INC·Filed 1978·Granted Mar 25, 1980·27 cites·6 claims
- 0785US3940747AHigh density, high speed random access read-write memoryTEXAS INSTRUMENTS INC·Filed 1973·Granted Feb 24, 1976·39 cites·3 claims
- 0881US4198693AVMOS Read only memoryTEXAS INSTRUMENTS INC·Filed 1978·Granted Apr 15, 1980·24 cites·8 claims
- 0975US4385432AClosely-spaced double level conductors for MOS read onlyTEXAS INSTRUMENTS INC·Filed 1978·Granted May 31, 1983·19 cites·7 claims
- 1075US4384399AMethod of making a metal programmable MOS read only memory deviceTEXAS INSTRUMENTS INC·Filed 1978·Granted May 24, 1983·19 cites·2 claims
- 1174US4294001AMethod of making implant programmable metal gate MOS read only memoryTEXAS INSTRUMENTS INC·Filed 1979·Granted Oct 13, 1981·18 cites·10 claims
- 1274US4230504AMethod of making implant programmable N-channel ROMTEXAS INSTRUMENTS INC·Filed 1978·Granted Oct 28, 1980·18 cites·8 claims
- 1373US4386286AHigh current static MOS output buffer circuit for power-down mode of operationTEXAS INSTRUMENTS INC·Filed 1980·Granted May 31, 1983·17 cites·16 claims
- 1472US4198697AMultiple dummy cell layout for MOS random access memoryTEXAS INSTRUMENTS INC·Filed 1978·Granted Apr 15, 1980·14 cites·6 claims
- 1572US4035662ACapacitive means for controlling threshold voltages in insulated gate field effect transistor circuitsTEXAS INSTRUMENTS INC·Filed 1975·Granted Jul 12, 1977·13 cites·3 claims
- 1670US4317272AHigh density, electrically erasable, floating gate memory cellTEXAS INSTRUMENTS INC·Filed 1979·Granted Mar 2, 1982·27 cites·6 claims
- 1769US4290184AMethod of making post-metal programmable MOS read only memoryTEXAS INSTRUMENTS INC·Filed 1978·Granted Sep 22, 1981·15 cites·16 claims
- 1868US4467450ARandom access MOS memory cell using double level polysiliconTEXAS INSTRUMENTS INC·Filed 1980·Granted Aug 21, 1984·21 cites·5 claims
- 1967US5434438ARandom access memory cell with a capacitorTEXAS INSTRUMENTS INC·Filed 1994·Granted Jul 18, 1995·26 cites·34 claims
- 2066US4342100AImplant programmable metal gate MOS read only memoryTEXAS INSTRUMENTS INC·Filed 1981·Granted Jul 27, 1982·18 cites·2 claims
- 2162US4376983AHigh density dynamic memory cellTEXAS INSTRUMENTS INC·Filed 1980·Granted Mar 15, 1983·16 cites·15 claims
- 2251US5168075ARandom access memory cell with implanted capacitor regionTEXAS INSTRUMENTS INC·Filed 1989·Granted Dec 1, 1992·11 cites·30 claims
- 2351US4827448ARandom access memory cell with implanted capacitor regionTEXAS INSTRUMENTS INC·Filed 1988·Granted May 2, 1989·13 cites·51 claims
- 2451US4342099AElectrically erasable programmable MNOS read only memoryTEXAS INSTRUMENTS INC·Filed 1979·Granted Jul 27, 1982·13 cites·14 claims
- 2550US4613889ARandom access MOS/memory cell with capacitor and transistor formed in recessTEXAS INSTRUMENTS INC·Filed 1984·Granted Sep 23, 1986·7 cites·18 claims
- 2650US4390971APost-metal programmable MOS read only memoryTEXAS INSTRUMENTS INC·Filed 1981·Granted Jun 28, 1983·10 cites·1 claims
- 2747US4554643AElectrically erasable programmable MNOS read only memoryTEXAS INSTRUMENTS INC·Filed 1982·Granted Nov 19, 1985·12 cites·5 claims
- 2847US4372031AMethod of making high density memory cells with improved metal-to-silicon contactsTEXAS INSTRUMENTS INC·Filed 1980·Granted Feb 8, 1983·9 cites·10 claims
- 2941US4536941AMethod of making high density dynamic memory cellKUO CHANG KIANG·Filed 1983·Granted Aug 27, 1985·8 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →