Inventor · disambiguated record
Choong-Keun Kwak
Also filed as: KWAK CHOONG-KEUN
56 granted patents·2 pending applications·1,232 citations·filing 1992–2010
99Inventor score
Top patents by PatentIndex Score
58 records- 0198US7248494B2Semiconductor memory device capable of compensating for leakage currentSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 24, 2007·158 cites·19 claims
- 0298US6928022B2Write driver circuit in phase change memory device and method for applying write currentSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 9, 2005·177 cites·33 claims
- 0396US7236393B2Phase-change semiconductor memory device and method of programming sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 26, 2007·44 cites·21 claims
- 0495US7283387B2Phase change random access memory device having variable drive voltage circuitSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 16, 2007·44 cites·18 claims
- 0594US6982913B2Data read circuit for use in a semiconductor memory and a memory thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 3, 2006·73 cites·20 claims
- 0693US7427531B2Phase change memory devices employing cell diodes and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 23, 2008·27 cites·30 claims
- 0792US7227776B2Phase change random access memory (PRAM) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 5, 2007·24 cites·20 claims
- 0891US7315469B2Control of set/reset pulse in response to peripheral temperature in PRAM deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 1, 2008·21 cites·20 claims
- 0991US7274586B2Method for programming phase-change memory array to set state and circuit of a phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 25, 2007·26 cites·24 claims
- 1091US7110286B2Phase-change memory device and method of writing a phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Sep 19, 2006·55 cites·48 claims
- 1190US7502251B2Phase-change memory device and method of writing a phase-change memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 10, 2009·23 cites·24 claims
- 1289US7582941B2Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 1, 2009·14 cites·6 claims
- 1389US7457151B2Phase change random access memory (PRAM) device having variable drive voltagesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 25, 2008·21 cites·23 claims
- 1487US5956279AStatic random access memory device with burn-in test circuitSAMSUNE ELECTRONICS CO LTD·Filed 1998·Granted Sep 21, 1999·87 cites·11 claims
- 1586US7064601B2Reference voltage generating circuit using active resistance deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 20, 2006·36 cites·13 claims
- 1683US6256254B1Semiconductor memory device decoderSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 3, 2001·37 cites·14 claims
- 1782US5576999ARedundancy circuit of a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1995·Granted Nov 19, 1996·52 cites·20 claims
- 1880US7688620B2Nonvolatile memory device and related methods of operationSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 30, 2010·10 cites·21 claims
- 1979US7397681B2Nonvolatile memory devices having enhanced bit line and/or word line driving capabilitySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·11 cites·7 claims
- 2078US7317655B2Memory cell array biasing method and a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 8, 2008·5 cites·23 claims
- 2175US7463511B2Phase change memory device using multiprogramming methodSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 9, 2008·9 cites·15 claims
- 2275US6026039AParallel test circuit for semiconductor memorySAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Feb 15, 2000·44 cites·6 claims
- 2375US5471429ABurn-in circuit and method therefor of semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 1994·Granted Nov 28, 1995·36 cites·24 claims
- 2475US5315173AData buffer circuit with delay circuit to increase the length of a switching transition period during data signal inversionSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted May 24, 1994·28 cites·14 claims
- 2571US7796425B2Control of set/reset pulse in response to peripheral temperature in PRAM deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 14, 2010·6 cites·19 claims
- 2670US7535760B2Memory devices and memory systems having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 19, 2009·4 cites·20 claims
- 2767US7245543B2Data read circuit for use in a semiconductor memory and a method thereforSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 17, 2007·5 cites·11 claims
- 2866US7710767B2Memory cell array biasing method and a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 4, 2010·6 cites·19 claims
- 2965US7391669B2Semiconductor memory device and core layout thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jun 24, 2008·2 cites·29 claims
- 3064US8043869B2Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Oct 25, 2011·2 cites·10 claims
- 3164US7426129B2Layout structures in semiconductor memory devices including bit line layout for higher density migrationSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 16, 2008·5 cites·13 claims
- 3264US7075848B2Redundancy circuit in semiconductor memory device having a multiblock structureSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jul 11, 2006·12 cites·13 claims
- 3363US7994493B2Phase change memory devices employing cell diodes and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 9, 2011·4 cites·81 claims
- 3463US7349246B2Initial firing method and phase change memory device for performing firing effectivelySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 25, 2008·3 cites·10 claims
- 3562US7221611B2Semiconductor memory device for low power consumptionSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 22, 2007·5 cites·16 claims
- 3662US6870783B2Mode entrance control circuit and mode entering method in semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 22, 2005·12 cites·14 claims
- 3759US7460386B2Layout method of a semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 2, 2008·3 cites·14 claims
- 3857US6657264B2Layout method of latch-up prevention circuit of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 2, 2003·7 cites·12 claims
- 3957US6456547B1Semiconductor memory device with function of repairing stand-by current failureSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 24, 2002·10 cites·18 claims
- 4055US6490223B1Integrated circuit capable of being burn-in tested using an alternating current stress and a testing method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 3, 2002·7 cites·15 claims
- 4152US6714463B2Semiconductor memory device having reduced chip select output timeSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Mar 30, 2004·10 cites·20 claims
- 4252US5754487ABit line precharge circuitSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted May 19, 1998·14 cites·12 claims
- 4351US7254055B2Initial firing method and phase change memory device for performing firing effectivelySAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 7, 2007·4 cites·6 claims
- 4451US6781899B2Semiconductor memory device and test method therofSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 24, 2004·7 cites·41 claims
- 4550US5390150ASemiconductor memory device with redundancy structure suppressing power consumptionSAMSUNG ELECTRONICS CO LTD·Filed 1992·Granted Feb 14, 1995·13 cites·8 claims
- 4648US7499306B2Phase-change memory device and method that maintains the resistance of a phase-change material in a set state within a constant resistance rangeSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Mar 3, 2009·1 cites·3 claims
- 4744US7851878B2Magnetic memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Dec 14, 2010·0 cites·15 claims
- 4844US5999390AInput buffer circuit for semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Dec 7, 1999·9 cites·9 claims
- 4944US5959907ASemiconductor memory device having a redundancy circuitSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Sep 28, 1999·9 cites·7 claims
- 5042US7876609B2Nonvolatile memory device and related methods of operationSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted Jan 25, 2011·0 cites·20 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →