Inventor · disambiguated record

Chih-Yu Lai

Also filed as: LAI CHIH-YU

48 granted patents·18 pending applications·177 citations·filing 2008–2025

97Inventor score

Technology areasH10W H10F H10P H01L H10D

Files withTAIWAN SEMICONDUCTOR MFG CO LTD57 TAIWAN SEMICONDUCTOR MFG4 LAI CHIH-YU3 FON CHIN IND CO LTD1 TSAO CHUN-HAN1

Top patents by PatentIndex Score

66 records

0196US9704904B2Deep trench isolation structures and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 11, 2017·22 cites·20 claims
0293US9659981B2Backside illuminated image sensor with negatively charged layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 23, 2017·9 cites·20 claims
0393US9281331B2High dielectric constant structure for the vertical transfer gates of a complementary metal-oxide semiconductor (CMOS) image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 8, 2016·16 cites·12 claims
0493US8048813B2Method of reducing delamination in the fabrication of small-pitch devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 1, 2011·20 cites·19 claims
0592US10163949B2Image device having multi-layered refractive layer on back surfaceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·6 cites·20 claims
0692US9653507B2Deep trench isolation shrinkage method for enhanced device performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 16, 2017·7 cites·21 claims
0790US9871095B2Stacked capacitor with enhanced capacitance and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 16, 2018·6 cites·20 claims
0890US8853811B2Image sensor trench isolation with conformal dopingLAI CHIH-YU·Filed 2011·Granted Oct 7, 2014·10 cites·20 claims
0989US9754993B2Deep trench isolations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 5, 2017·5 cites·20 claims
1088US7614697B1Coupling mechanism interposed between a seat and a back of a chair to prevent a reclining motion of the back from tilting the seatFON CHIN IND CO LTD·Filed 2008·Granted Nov 10, 2009·45 cites·2 claims
1187US9425343B2Mechanisms for forming image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 23, 2016·4 cites·22 claims
1287US2025359335A1Semiconductor device having segmented interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1387US2025324762A1Method of making amphi-fet structure and method of designingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1486US12408440B2Method of making amphi-FET structure and method of designingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
1586US11853670B2Arrangement of source or drain conductors of transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·1 cites·20 claims
1686US8778807B2Method of reducing delamination in the fabrication of small-pitch devicesLAI CHIH-YU·Filed 2011·Granted Jul 15, 2014·7 cites·23 claims
1786US2024387578A1Image sensor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1885US9190441B2Image sensor trench isolation with conformal dopingTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·5 cites·20 claims
1984US2025062195A1Semiconductor device having self-aligned interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2083US12471377B2Method of forming semiconductor device having segmented interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
2183US12266594B2Method of making semiconductor device having self-aligned interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
2283US10163947B2Photodiode gate dielectric protection layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·2 cites·20 claims
2383US2024395671A1Mehtod of making semiconductor device having self-aligned interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2483US2024363671A1Deep trench isolations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2582US12009362B2Method of making amphi-FET structure and method of designingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
2682US9812477B2Photodiode gate dielectric protection layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·2 cites·20 claims
2782US2025328716A1Arrangement of source or drain conductors of transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2881US10868050B2Backside illuminated image sensor with negatively charged layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 15, 2020·1 cites·20 claims
2981US9627326B2Method for forming alignment marks and structure of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·2 cites·20 claims
3080US12243822B2Method of manufacturing integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
3180US2025364408A1Semiconductor device including through via and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3280US2024395716A1Method of manufacturing integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3380US2024395718A1Integrated circuits having stacked transistors and backside power nodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3479US2025357346A1Method of manufacturing integrated circuit structure including first metal structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3578US12346644B2Arrangement of source or drain conductors of transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
3676US12080738B2Image sensor having stacked metal oxide films as fixed charge filmTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 3, 2024·0 cites·20 claims
3776US9355964B2Method for forming alignment marks and structure of sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 31, 2016·2 cites·20 claims
3876US9059057B2Image sensor having compressive layersTSAO CHUN-HAN·Filed 2012·Granted Jun 16, 2015·2 cites·19 claims
3976US2024395821A1Integrated circuit and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4075US12087801B2Deep trench isolations and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·20 claims
4175US2025364399A1Semiconductor devices with reduced effect of capacitive couplingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4274US9252296B2Semiconductor device with compressive layersTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Feb 2, 2016·1 cites·20 claims
4374US2024395670A1Method of making semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4474US2024371753A1Source/drain isolation structure and layout methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4574US2025183173A1Integrated circuits having stacked transistors and backside power nodesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4673US11854940B2Semiconductor device having self-aligned interconnect structure and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
4773US11764213B2Amphi-FET structure, method of making and method of designingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·0 cites·20 claims
4873US10868058B2Photodiode gate dielectric protection layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
4973US10074612B2Method for forming alignment marks and structure of sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 11, 2018·1 cites·20 claims
5072US12034009B2Semiconductor device segmented interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 9, 2024·0 cites·20 claims

Showing the top 50 of 66 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →