Inventor · disambiguated record
Chung H. Lam
Also filed as: LAM CHUNG · LAM CHUNG H · LAM CHUNG HON
354 granted patents·34 pending applications·5,260 citations·filing 1981–2022
99Inventor score
Files withIBM258BREITWISCH MATTHEW J26MACRONIX INT CO LTD19LAM CHUNG H15JIANGSU ADVANCED MEMORY TECH CO LTD11
Top patents by PatentIndex Score
388 records- 0199US7376006B2Enhanced programming performance in a nonvolatile memory device having a bipolar programmable storage elementIBM·Filed 2005·Granted May 20, 2008·138 cites·12 claims
- 0299US7351648B2Methods for forming uniform lithographic featuresIBM·Filed 2006·Granted Apr 1, 2008·163 cites·20 claims
- 0398US8589320B2Area efficient neuromorphic system that connects a FET in a diode configuration, and a variable resistance material to junctions of neuron circuit blocksBREITWISCH MATTHEW J·Filed 2012·Granted Nov 19, 2013·46 cites·13 claims
- 0498US7388273B2Reprogrammable fuse structure and methodIBM·Filed 2005·Granted Jun 17, 2008·73 cites·12 claims
- 0598US6657252B2FinFET CMOS with NVRAM capabilityIBM·Filed 2002·Granted Dec 2, 2003·193 cites·12 claims
- 0697US10763307B1Stackable cross-point phase-change material memory array with a resistive linerIBM·Filed 2019·Granted Sep 1, 2020·25 cites·20 claims
- 0797US9793323B1Phase change memory with high enduranceMACRONIX INT CO LTD·Filed 2016·Granted Oct 17, 2017·21 cites·19 claims
- 0897US8338225B2Method to reduce a via area in a phase change memory cellBREITWISCH MATTHEW J·Filed 2012·Granted Dec 25, 2012·30 cites·14 claims
- 0997US7691684B2Fin-type antifuseIBM·Filed 2008·Granted Apr 6, 2010·49 cites·17 claims
- 1097US7642125B2Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturingMACRONIX INT CO LTD·Filed 2007·Granted Jan 5, 2010·36 cites·11 claims
- 1197US7514705B2Phase change memory cell with limited switchable volumeIBM·Filed 2006·Granted Apr 7, 2009·55 cites·13 claims
- 1297US7394089B2Heat-shielded low power PCM-based reprogrammable EFUSE deviceIBM·Filed 2006·Granted Jul 1, 2008·76 cites·3 claims
- 1397US7256415B2Memory device and method of manufacturing the device by simultaneously conditioning transition metal oxide layers in a plurality of memory cellsIBM·Filed 2005·Granted Aug 14, 2007·49 cites·10 claims
- 1497US5399516AMethod of making shadow RAM cell having a shallow trench EEPROMIBM·Filed 1992·Granted Mar 21, 1995·185 cites·2 claims
- 1596US8971527B2Reliable physical unclonable function for device authenticationIBM·Filed 2013·Granted Mar 3, 2015·35 cites·19 claims
- 1696US8816717B2Reactive material for integrated circuit tamper detection and responseIBM·Filed 2012·Granted Aug 26, 2014·26 cites·24 claims
- 1796US7560721B1Phase change material with filament electrodeIBM·Filed 2008·Granted Jul 14, 2009·42 cites·15 claims
- 1896US7485891B2Multi-bit phase change memory cell and multi-bit phase change memory including the same, method of forming a multi-bit phase change memory, and method of programming a multi-bit phase change memoryIBM·Filed 2003·Granted Feb 3, 2009·125 cites·10 claims
- 1996US7351666B2Layout and process to contact sub-lithographic structuresIBM·Filed 2006·Granted Apr 1, 2008·36 cites·13 claims
- 2096US6541815B1High-density dual-cell flash memory structureIBM·Filed 2001·Granted Apr 1, 2003·117 cites·14 claims
- 2195US10374103B1Crystallized silicon vertical diode on BEOL for access device for confined PCM arraysIBM·Filed 2018·Granted Aug 6, 2019·10 cites·20 claims
- 2295US8921820B2Phase change memory cell with large electrode contact areaIBM·Filed 2012·Granted Dec 30, 2014·11 cites·12 claims
- 2395US8310864B2Self-aligned bit line under word line memory arrayLUNG HSIANG-LAN·Filed 2010·Granted Nov 13, 2012·17 cites·30 claims
- 2495US8311965B2Area efficient neuromorphic circuits using field effect transistors (FET) and variable resistance materialBREITWISCH MATTHEW J·Filed 2009·Granted Nov 13, 2012·71 cites·12 claims
- 2595US8178386B2Phase change memory cell array with self-converged bottom electrode and method for manufacturingLUNG HSIANG-LAN·Filed 2007·Granted May 15, 2012·26 cites·11 claims
- 2695US8138028B2Method for manufacturing a phase change memory device with pillar bottom electrodeLUNG HSIANG LAN·Filed 2007·Granted Mar 20, 2012·25 cites·27 claims
- 2795US7968876B2Phase change memory cell having vertical channel access transistorMACRONIX INT CO LTD·Filed 2009·Granted Jun 28, 2011·22 cites·15 claims
- 2895US7488967B2Structure for confining the switching current in phase memory (PCM) cellsIBM·Filed 2005·Granted Feb 10, 2009·40 cites·6 claims
- 2995US7324366B2Non-volatile memory architecture employing bipolar programmable resistance storage elementsIBM·Filed 2006·Granted Jan 29, 2008·44 cites·20 claims
- 3095US7057923B2Field emission phase change diode memoryIBM·Filed 2003·Granted Jun 6, 2006·86 cites·30 claims
- 3195US5291439ASemiconductor memory cell and memory array with inversion layerIBM·Filed 1991·Granted Mar 1, 1994·158 cites·24 claims
- 3294US9627612B2Metal nitride keyhole or spacer phase change memory cell structuresIBM·Filed 2015·Granted Apr 18, 2017·11 cites·10 claims
- 3394US9166161B2Phase change memory cell with large electrode contact areaIBM·Filed 2014·Granted Oct 20, 2015·9 cites·8 claims
- 3494US8729521B2Self aligned fin-type programmable memory cellLUNG HSIANG-LAN·Filed 2010·Granted May 20, 2014·15 cites·11 claims
- 3594US8728859B2Small footprint phase change memory cellBREITWISCH MATTHEW J·Filed 2010·Granted May 20, 2014·14 cites·16 claims
- 3694US8717802B2Reconfigurable multi-level sensing scheme for semiconductor memoriesLAM CHUNG H·Filed 2011·Granted May 6, 2014·23 cites·20 claims
- 3794US7932507B2Current constricting phase change memory element structureIBM·Filed 2010·Granted Apr 26, 2011·14 cites·14 claims
- 3894US7879645B2Fill-in etching free pore deviceMACRONIX INT CO LTD·Filed 2008·Granted Feb 1, 2011·31 cites·12 claims
- 3994US7505334B1Measurement method for reading multi-level memory cell utilizing measurement time delay as the characteristic parameter for level definitionIBM·Filed 2008·Granted Mar 17, 2009·34 cites·1 claims
- 4094US7485487B1Phase change memory cell with electrodeIBM·Filed 2008·Granted Feb 3, 2009·28 cites·17 claims
- 4194US6534807B2Local interconnect junction on insulator (JOI) structureIBM·Filed 2001·Granted Mar 18, 2003·115 cites·22 claims
- 4294US5196722AShadow ram cell having a shallow trench eepromIBM·Filed 1992·Granted Mar 23, 1993·128 cites·35 claims
- 4393US10319440B1Void control of confined phase change memoryIBM·Filed 2018·Granted Jun 11, 2019·9 cites·8 claims
- 4493US10056546B2Metal nitride keyhole or spacer phase change memory cell structuresIBM·Filed 2017·Granted Aug 21, 2018·9 cites·18 claims
- 4593US9911492B2Writing multiple levels in a phase change memory using a write reference voltage that incrementally ramps over a write periodIBM·Filed 2014·Granted Mar 6, 2018·9 cites·13 claims
- 4693US8854872B2Drift mitigation for multi-bits phase change memoryLAM CHUNG H·Filed 2011·Granted Oct 7, 2014·15 cites·11 claims
- 4793US8471236B2Flat lower bottom electrode for phase change memory cellBREITWISCH MATTHEW J·Filed 2012·Granted Jun 25, 2013·12 cites·9 claims
- 4893US7551473B2Programmable resistive memory with diode structureMACRONIX INT CO LTD·Filed 2007·Granted Jun 23, 2009·31 cites·25 claims
- 4993US7473921B2Nonvolatile memory cell with concentric phase change material formed around a pillar arrangementIBM·Filed 2006·Granted Jan 6, 2009·26 cites·1 claims
- 5093US7460389B2Write operations for phase-change-material memoryIBM·Filed 2005·Granted Dec 2, 2008·27 cites·4 claims
Showing the top 50 of 388 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Chung H. Lam files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →