Inventor · disambiguated record
Changhyun Lee
Also filed as: LEE CHANGHYUN
87 granted patents·18 pending applications·784 citations·filing 2009–2025
99Inventor score
Files withSAMSUNG ELECTRONICS CO LTD42LEE CHANGHYUN24MICRON TECHNOLOGY INC12YANGTZE MEMORY TECH CO LTD7PARK HANGIL4
Top patents by PatentIndex Score
105 records- 0199US8278170B2Methods of forming nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings thereinLEE CHANGHYUN·Filed 2011·Granted Oct 2, 2012·117 cites·19 claims
- 0298US11232839B1Erasing method for 3D NAND flash memoryYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 25, 2022·12 cites·20 claims
- 0398US9728266B1Memory device including multiple select gates and different bias conditionsMICRON TECHNOLOGY INC·Filed 2016·Granted Aug 8, 2017·38 cites·21 claims
- 0497US8569827B2Three-dimensional semiconductor memory devicesLEE CHANGHYUN·Filed 2011·Granted Oct 29, 2013·33 cites·14 claims
- 0596US9905575B2Integrated structures comprising charge-storage regions along outer portions of vertically-extending channel materialMICRON TECHNOLOGY INC·Filed 2017·Granted Feb 27, 2018·14 cites·11 claims
- 0696US9685452B2Three-dimensional semiconductor device with vertical and horizontal channels in stack structure having electrodes vertically stacked on the substrateSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jun 20, 2017·25 cites·20 claims
- 0796US9595346B23-Dimensional semiconductor memory device and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 14, 2017·22 cites·20 claims
- 0896US8570805B2Nonvolatile memory device, programming method thereof and memory system including the sameLEE CHANGHYUN·Filed 2011·Granted Oct 29, 2013·55 cites·25 claims
- 0995US10600801B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 24, 2020·8 cites·14 claims
- 1095US9773882B1Integrated structuresMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 26, 2017·12 cites·33 claims
- 1194US10939313B2Method and apparatus for managing electronic device through wireless communicationSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 2, 2021·127 cites·8 claims
- 1294US9947686B2Semiconductor device including a stack having a sidewall with recessed and protruding portionsSON BYOUNGKEUN·Filed 2017·Granted Apr 17, 2018·9 cites·20 claims
- 1394US8581321B2Nonvolatile memory device and method of forming the sameSON BYOUNGKEUN·Filed 2011·Granted Nov 12, 2013·20 cites·13 claims
- 1493US9748265B1Integrated structures comprising charge-storage regions along outer portions of vertically-extending channel materialMICRON TECHNOLOGY INC·Filed 2016·Granted Aug 29, 2017·9 cites·8 claims
- 1593US8872183B2Three-dimensional semiconductor devicesCHANG SUNG-IL·Filed 2012·Granted Oct 28, 2014·14 cites·20 claims
- 1693US8625348B2Nonvolatile memory devices and methods forming the sameLEE CHANGHYUN·Filed 2011·Granted Jan 7, 2014·12 cites·12 claims
- 1792US10038007B2Three-dimensional semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 31, 2018·6 cites·20 claims
- 1892US9627396B2Semiconductor device including a stack having a sidewall with recessed and protruding portionsSON BYOUNGKEUN·Filed 2015·Granted Apr 18, 2017·7 cites·19 claims
- 1992US9000508B2Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings thereinSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 7, 2015·14 cites·22 claims
- 2092US8891315B2Nonvolatile memory device and erase method thereofLEE CHANGHYUN·Filed 2013·Granted Nov 18, 2014·16 cites·20 claims
- 2191US9754957B2Nonvolatile memory devices and methods forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 5, 2017·6 cites·4 claims
- 2291US8981458B2Three-dimensional semiconductor devices and methods of fabricating the sameLEE CHANGHYUN·Filed 2011·Granted Mar 17, 2015·9 cites·22 claims
- 2390US11901023B2Architecture and method for NAND memory operationYANGTZE MEMORY TECH CO LTD·Filed 2022·Granted Feb 13, 2024·1 cites·20 claims
- 2490US11040169B2Method and apparatus for controlling temperature adjustment deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 22, 2021·20 cites·20 claims
- 2590US9966451B1Integrated structuresMICRON TECHNOLOGY INC·Filed 2017·Granted May 8, 2018·6 cites·26 claims
- 2689US10096616B2Three-dimensional semiconductor device with vertical and horizontal channels in stack structure having electrodes vertically stacked on the substrateSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 9, 2018·6 cites·15 claims
- 2789US8546869B2Nonvolatile memory devices having vertically integrated nonvolatile memory cell sub-strings thereinLEE CHANGHYUN·Filed 2012·Granted Oct 1, 2013·8 cites·3 claims
- 2887US10411031B2Semiconductor device including a stack having a sidewall with recessed and protruding portionsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 10, 2019·3 cites·20 claims
- 2987US9177965B2Nonvolatile memory device in three-dimensional structure with a stress reducing materials on the channelLEE CHANGHYUN·Filed 2011·Granted Nov 3, 2015·12 cites·10 claims
- 3087US9147471B2Nonvolatile memory device and driving method thereofLEE CHANGHYUN·Filed 2012·Granted Sep 29, 2015·8 cites·14 claims
- 3187US8408088B2Apparatus for removing parking state of shift-by-wire shifting devicePARK HANGIL·Filed 2010·Granted Apr 2, 2013·9 cites·8 claims
- 3286US9564237B2Nonvolatile memory device and read method thereofLEE CHANGHYUN·Filed 2015·Granted Feb 7, 2017·6 cites·5 claims
- 3386US8059466B2Memory system and programming method thereofLEE CHANGHYUN·Filed 2010·Granted Nov 15, 2011·10 cites·20 claims
- 3486US2025299754A1Architecture and method for nand memory operationYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 3585US10026480B2Memory device including multiple select gates and different bias conditionsMICRON TECHNOLOGY INC·Filed 2017·Granted Jul 17, 2018·4 cites·22 claims
- 3685US9847346B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Dec 19, 2017·5 cites·20 claims
- 3785US8737129B2Nonvolatile memory device and read method thereofLEE CHANGHYUN·Filed 2012·Granted May 27, 2014·7 cites·4 claims
- 3884US9601208B2Nonvolatile memory device and driving method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 21, 2017·5 cites·20 claims
- 3984US9236340B2String selection structure of three-dimensional semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jan 12, 2016·8 cites·27 claims
- 4084US8107295B2Nonvolatile memory device and read method thereofLEE CHANGHYUN·Filed 2009·Granted Jan 31, 2012·16 cites·12 claims
- 4183US9905574B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 27, 2018·2 cites·11 claims
- 4282US9793292B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 17, 2017·2 cites·13 claims
- 4381US9224493B2Nonvolatile memory device and read method thereofLEE CHANGHYUN·Filed 2014·Granted Dec 29, 2015·5 cites·4 claims
- 4481US8643080B2Three-dimensional semiconductor memory deviceLEE CHANGHYUN·Filed 2011·Granted Feb 4, 2014·6 cites·19 claims
- 4581US8434383B2Transmission shifting apparatus for vehiclePARK HANGIL·Filed 2010·Granted May 7, 2013·6 cites·36 claims
- 4678US10818357B2Memory device including multiple select gates and different bias conditionsMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 27, 2020·1 cites·20 claims
- 4778US10176880B1Selective body reset operation for three dimensional (3D) NAND memoryINTEL CORP·Filed 2017·Granted Jan 8, 2019·4 cites·21 claims
- 4878US9093479B2Method of forming nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 28, 2015·4 cites·9 claims
- 4977US10586808B2Semiconductor device including a stack having a sidewall with recessed and protruding portionsSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 10, 2020·1 cites·20 claims
- 5077US10360979B2Memory device including multiple select gates and different bias conditionsMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 23, 2019·2 cites·20 claims
Showing the top 50 of 105 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →