Inventor · disambiguated record
Chieh Lee
Also filed as: LEE CHIEH · Lee Chieh-Tse
17 granted patents·19 pending applications·11 citations·filing 2017–2025
89Inventor score
Top patents by PatentIndex Score
36 records- 0197US12063786B2Compute-in-memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·3 cites·20 claims
- 0295US12014768B2DRAM computation circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·2 cites·20 claims
- 0391US11676641B2Memory systems with vertical integrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·2 cites·20 claims
- 0488US12068023B2Memory circuits, memory structures, and methods for fabricating a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·1 cites·20 claims
- 0587US12362017B2Memory device with reduced areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
- 0687US2025322880A1Memory device with reduced areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0783US12394469B2DRAM computation circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 19, 2025·0 cites·20 claims
- 0883US2025329376A1Dram computation circuit and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0980US2024365556A1Compute-in-memory device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1080US2025365918A1Structures of sram cell and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1180US2024371433A1Memory circuits, memory structures, and methods for fabricating a memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1278US12249390B2Memory systems with vertical integrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 11, 2025·0 cites·20 claims
- 1378US2025359024A1High performance embedded 1t1c memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1478US2025351332A1Semiconductor device with a vertical channel, and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1577US10714201B2Memory system capable of pre-screening internal transistorsEMEMORY TECHNOLOGY INC·Filed 2019·Granted Jul 14, 2020·3 cites·24 claims
- 1676US2025322867A1Sense amplifier with read circuit for compute-in-memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1775US2025356891A1Memory device and manufacturing method and test method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1874US2025182796A1Memory systems with vertical integrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1972US2025220884A1High performance embedded 1t1c memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2071US11984165B2Memory device with reduced areaTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·0 cites·20 claims
- 2168US2025149092A1Memory device and method for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2268US2025218500A1Memory array connectionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2365US12217790B2Memory array connectionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 2464US12426231B2Structures of sram cell and methods of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 2564US12414288B2Semiconductor device with a vertical channel wrapped around gate, and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
- 2664US12322435B2Sense amplifier with read circuit for compute-in-memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 3, 2025·0 cites·20 claims
- 2761US12243589B2Memory device and method for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 2860US12400692B2Memory device and manufacturing method and test method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 2957US2025118361A1Tracking scheme circuit of memory device and methods for operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3056US2025107072A1Memory device with twisted bit lines and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3156US2023385625A1Neuromorphic computing device with three-dimensional memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3254US2025024657A1Semiconductor devices and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3350US10176883B2Power-up sequence protection circuit for avoiding unexpected power-up voltageEMEMORY TECHNOLOGY INC·Filed 2017·Granted Jan 8, 2019·0 cites·15 claims
- 3448US2023022516A1Compute-in-memory systems and methods with configurable input and summing unitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3544US2024062818A1Memory device and operating method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3640US11783905B2Anti-fuse memory device, memory array, and programming method of an anti-fuse memory device for preventing leakage current and program disturbanceEMEMORY TECHNOLOGY INC·Filed 2021·Granted Oct 10, 2023·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →