Inventor · disambiguated record
Cho-Eun Lee
Also filed as: LEE CHO EUN
22 granted patents·1 pending application·83 citations·filing 2014–2023
93Inventor score
Top patents by PatentIndex Score
23 records- 0196US10297601B2Semiconductor devices with layers commonly contacting fins and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 21, 2019·19 cites·19 claims
- 0295US9761719B2Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrationsSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 12, 2017·19 cites·20 claims
- 0392US9397219B2Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devicesKIM SEOK-HOON·Filed 2015·Granted Jul 19, 2016·8 cites·20 claims
- 0491US11145720B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 12, 2021·5 cites·19 claims
- 0591US10672764B2Integrated circuit semiconductor devices including a metal oxide semiconductor (MOS) transistorSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jun 2, 2020·8 cites·20 claims
- 0690US11728434B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 15, 2023·2 cites·12 claims
- 0786US10084049B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 25, 2018·4 cites·19 claims
- 0886US9972716B2Semiconductor devicesKIM JIN BUM·Filed 2015·Granted May 15, 2018·5 cites·18 claims
- 0986US9368495B2Semiconductor devices having bridge layer and methods of manufacturing the sameKIM SEOK-HOON·Filed 2014·Granted Jun 14, 2016·6 cites·17 claims
- 1081US10008600B2Semiconductor device having silicon-germanium source/drain regions with varying germanium concentrationsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jun 26, 2018·3 cites·17 claims
- 1179US10784379B2Semiconductor device including a shared semiconductor pattern having faceted sidewalls and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 22, 2020·2 cites·19 claims
- 1279US9735158B2Semiconductor devices having bridge layer and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 15, 2017·2 cites·20 claims
- 1378US12027586B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jul 2, 2024·0 cites·20 claims
- 1470US11735631B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
- 1567US12501672B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Dec 16, 2025·0 cites·20 claims
- 1659US11469237B2Semiconductor devices with layers commonly contacting fins and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 11, 2022·0 cites·15 claims
- 1758US10147723B2Semiconductor devices having bridge layer and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 4, 2018·0 cites·20 claims
- 1856US9755076B2Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Sep 5, 2017·0 cites·6 claims
- 1955US9553192B2Semiconductor devices having source/drain regions with strain-inducing layers and methods of manufacturing such semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 24, 2017·0 cites·18 claims
- 2052US12245440B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 4, 2025·0 cites·20 claims
- 2151US2023387206A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2247US10504992B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Dec 10, 2019·0 cites·16 claims
- 2343US10128112B2Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 13, 2018·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →