Inventor · disambiguated record
Chih-Ming Lee
Also filed as: LEE CHIH-MING
41 granted patents·15 pending applications·87 citations·filing 1996–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD40LEE CHIH MING8HSIEH PING-PANG2REALTEK SEMICONDUCTOR CORP2
Top patents by PatentIndex Score
56 records- 0197US11373971B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·5 cites·20 claims
- 0296US11756913B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·3 cites·20 claims
- 0395US9452515B2Pivotal assembly for hand toolLEE CHIH-MING·Filed 2015·Granted Sep 27, 2016·17 cites·11 claims
- 0493US12068271B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·1 cites·20 claims
- 0593US11527543B2Polysilicon removal in word line contact region of memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·4 cites·20 claims
- 0692US12010826B2Semiconductor device having a butted contact and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·1 cites·20 claims
- 0792US10748911B2Integrated circuit for low power SRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·7 cites·20 claims
- 0891US2025365949A1Semiconductor device having non-continuous wall structure surrounding stacked gate structure including conductive layer disposed between segmented portions of the wall structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0987US12464714B2Semiconductor device having non-continuous wall structure surrounding a stacked gate structure including a conductive layer disposed between segmented portions of the wall structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 1087US10163641B2Memory with a raised dummy feature surrounding a cell regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·5 cites·20 claims
- 1187US10163831B2Semiconductor device with post passivation structure and fabrication method thereforTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·4 cites·20 claims
- 1283US12381166B2Method of making semiconductor structure including buffer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
- 1383US11610901B2Semiconductor device having a butted contact, method of forming and method of usingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 21, 2023·1 cites·20 claims
- 1483US2025324589A1Polysilicon Removal In Word Line Contact Region Of Memory DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1582US10861859B2Memory cells with butted contacts and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·2 cites·20 claims
- 1682US2024371810A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1781US10734489B2Method for forming semiconductor device structure with metal silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 4, 2020·2 cites·20 claims
- 1880US2024349475A1Integrated circuit structure for low power sramTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1980US2024324162A1Semiconductor structure having a butted contact and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2080US2025351358A1Memory device with improved data retentionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2179US12376297B2Polysilicon removal in word line contact region of memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 2276US11810879B2Semiconductor structure including buffer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·0 cites·20 claims
- 2375US12052851B2Integrated circuit structure for low power SRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 2475US10164073B2Apparatus and method for memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 25, 2018·2 cites·20 claims
- 2574US12041771B2Polysilicon removal in word line contact region of memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 2672US11594449B2Method of making a semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·0 cites·20 claims
- 2771US12183793B2Method for forming semiconductor device structure with metal-semiconductor compound layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 31, 2024·0 cites·20 claims
- 2871US11925017B2Semiconductor device having a wall structure surrounding a stacked gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 5, 2024·0 cites·20 claims
- 2971US11309268B2Method of designing a layout, method of making a semiconductor structure and semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·0 cites·20 claims
- 3071US9263556B2Silicide process using OD spacersHSIEH PING-PANG·Filed 2012·Granted Feb 16, 2016·3 cites·20 claims
- 3170US11389934B2Attachment assembly to be connected with a hand toolLEE CHIH MING·Filed 2019·Granted Jul 19, 2022·1 cites·12 claims
- 3270US10226861B2Hand toolLEE CHIH MING·Filed 2016·Granted Mar 12, 2019·2 cites·9 claims
- 3370US2025101239A1Method of Making Paint Having Heat-Dissipating GrapheneLEE CHIH MING·Filed 2023·Application pending·0 cites
- 3467US11101354B2Method for forming semiconductor device structure with metal silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 24, 2021·0 cites·19 claims
- 3565US11462550B2SRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·0 cites·20 claims
- 3661US11121141B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·0 cites·20 claims
- 3760US10727191B2Semiconductor device with post passivation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·0 cites·20 claims
- 3858US10964589B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 30, 2021·0 cites·20 claims
- 3957US10535670B2Non-volatile memory having an erase gate formed between two floating gates with two word lines formed on other sides and a method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 14, 2020·0 cites·20 claims
- 4057US10283510B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·0 cites·24 claims
- 4157US2022039496A1Face Mask StructureLEE CHIH MING·Filed 2020·Application pending·0 cites
- 4256US9475179B2Hand tool with ratcheting featureLEE CHIH-MING·Filed 2014·Granted Oct 25, 2016·1 cites·13 claims
- 4355US9735049B2Method for fabricating semiconductor structure with passivation sidewall blockTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 15, 2017·0 cites·20 claims
- 4454US9768182B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·0 cites·20 claims
- 4554US2010003927A1Apparatus and method for power-saving and wake-upREALTEK SEMICONDUCTOR CORP·Filed 2009·Application pending·0 cites
- 4652US11653498B2Memory device with improved data retentionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 16, 2023·0 cites·20 claims
- 4750US9711657B2Silicide process using OD spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·0 cites·20 claims
- 4849US2018345462A1Tool attachmentLEE CHIH MING·Filed 2017·Application pending·0 cites
- 4947US2009153574A1Method and system for updating firmwareREALTEK SEMICONDUCTOR CORP·Filed 2008·Application pending·0 cites
- 5046US2019193251A1Attachment assembly to be connected with a hand toolLEE CHIH MING·Filed 2017·Application pending·0 cites
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →