Inventor · disambiguated record
Chwan-Ying Lee
Also filed as: LEE CHWAN-YING
37 granted patents·3 pending applications·1,585 citations·filing 1995–2021
98Inventor score
Files withIND TECH RES INST21HESTIA POWER INC11NAT SCIENCE COUNCIL2SHANGHAI HESTIA POWER INC2HESTIA POWER SHANGHAI TECH INC1
Top patents by PatentIndex Score
40 records- 0198US6436816B1Method of electroless plating copper on nitride barrierIND TECH RES INST·Filed 1998·Granted Aug 20, 2002·347 cites·14 claims
- 0298US6180523B1Copper metallization of USLI by electroless processIND TECH RES INST·Filed 1998·Granted Jan 30, 2001·357 cites·17 claims
- 0397US9368650B1SiC junction barrier controlled schottky rectifierHESTIA POWER INC·Filed 2015·Granted Jun 14, 2016·21 cites·11 claims
- 0495US6030877AElectroless gold plating method for forming inductor structuresIND TECH RES INST·Filed 1997·Granted Feb 29, 2000·210 cites·25 claims
- 0593US9246016B1Silicon carbide semiconductor deviceHESTIA POWER INC·Filed 2015·Granted Jan 26, 2016·11 cites·15 claims
- 0692US11184003B2Silicon carbide power device, driving circuit and control methodSHANGHAI HESTIA POWER INC·Filed 2020·Granted Nov 23, 2021·3 cites·4 claims
- 0792US8841721B2Stepped trench MOSFET and method of fabricating the sameIND TECH RES INST·Filed 2013·Granted Sep 23, 2014·16 cites·20 claims
- 0891US8766279B1SiC-based trench-type schottky deviceIND TECH RES INST·Filed 2012·Granted Jul 1, 2014·15 cites·13 claims
- 0991US5801100AElectroless copper plating method for forming integrated circuit structuresIND TECH RES INST·Filed 1997·Granted Sep 1, 1998·99 cites·18 claims
- 1090US11108388B1Silicon carbide power device, driving circuit and control methodSHANGHAI HESTIA POWER INC·Filed 2020·Granted Aug 31, 2021·3 cites·1 claims
- 1189US5776813AProcess to manufacture a vertical gate-enhanced bipolar transistorIND TECH RES INST·Filed 1997·Granted Jul 7, 1998·85 cites·21 claims
- 1289US5583073AMethod for producing electroless barrier layer and solder bump on chipNAT SCIENCE COUNCIL·Filed 1995·Granted Dec 10, 1996·118 cites·18 claims
- 1387US10483389B2Silicon carbide semiconductor deviceHESTIA POWER INC·Filed 2015·Granted Nov 19, 2019·6 cites·23 claims
- 1487US5917244AIntegrated circuit inductor structure formed employing copper containing conductor winding layer clad with nickel containing conductor layerIND TECH RES INST·Filed 1998·Granted Jun 29, 1999·72 cites·4 claims
- 1582US6713377B2Method of electroless plating copper on nitride barrierIND TECH RES INST·Filed 2002·Granted Mar 30, 2004·21 cites·7 claims
- 1681US9373713B2Silicon carbide semiconductor device and method of manufacture thereofHESTIA POWER INC·Filed 2015·Granted Jun 21, 2016·4 cites·19 claims
- 1781US6333235B1Method for forming SiGe bipolar transistorIND TECHNOLOGYRES INST·Filed 2000·Granted Dec 25, 2001·34 cites·33 claims
- 1879US10418476B2Silicon carbide semiconductor deviceHESTIA POWER INC·Filed 2017·Granted Sep 17, 2019·3 cites·10 claims
- 1977US9761703B1Wide bandgap semiconductor device with adjustable voltage levelHESTIA POWER INC·Filed 2016·Granted Sep 12, 2017·3 cites·19 claims
- 2074US10020368B2Silicon carbide semiconductor element and manufacturing method thereofHESTIA POWER INC·Filed 2016·Granted Jul 10, 2018·2 cites·15 claims
- 2171US9209293B2Integrated device having MOSFET cell array embedded with barrier Schottky diodeIND TECH RES INST·Filed 2013·Granted Dec 8, 2015·3 cites·17 claims
- 2270US6180478B1Fabrication process for a single polysilicon layer, bipolar junction transistor featuring reduced junction capacitanceIND TECH RES INST·Filed 1999·Granted Jan 30, 2001·32 cites·21 claims
- 2369US6406743B1Nickel-silicide formation by electroless Ni deposition on polysiliconIND TECH RES INST·Filed 1997·Granted Jun 18, 2002·35 cites·23 claims
- 2469US5795619ASolder bump fabricated method incorporate with electroless deposit and dip solderNAT SCIENCE COUNCIL·Filed 1995·Granted Aug 18, 1998·33 cites·12 claims
- 2568US9018640B1Silicon carbide power device equipped with termination structureHESTIA POWER INC·Filed 2014·Granted Apr 28, 2015·2 cites·12 claims
- 2668US6660625B2Method of electroless plating copper on nitride barrierIND TECH RES INST·Filed 2002·Granted Dec 9, 2003·9 cites·10 claims
- 2768US6589849B1Method for fabricating epitaxy base bipolar transistorIND TECH RES INST·Filed 2000·Granted Jul 8, 2003·15 cites·14 claims
- 2867US8878327B2Schottky barrier device having a plurality of double-recessed trenchesIND TECH RES INST·Filed 2012·Granted Nov 4, 2014·2 cites·6 claims
- 2963US10396774B2Intelligent power module operable to be driven by negative gate voltageHESTIA POWER INC·Filed 2017·Granted Aug 27, 2019·1 cites·12 claims
- 3056US8956963B2Schottky barrier diode and fabricating method thereofIND TECH RES INST·Filed 2013·Granted Feb 17, 2015·1 cites·9 claims
- 3153US11615959B2Silicon carbide semiconductor device and manufacturing method thereofHESTIA POWER SHANGHAI TECH INC·Filed 2021·Granted Mar 28, 2023·0 cites·13 claims
- 3253US6228733B1Non-selective epitaxial depostion technologyIND TECH RES INST·Filed 1999·Granted May 8, 2001·14 cites·20 claims
- 3344US6794212B2Method and apparatus for fabricating a thin film bulk acoustic resonatorWINBOND ELECTRONICS CORP·Filed 2002·Granted Sep 21, 2004·2 cites·7 claims
- 3443US10497777B2Semiconductor power deviceHESTIA POWER INC·Filed 2017·Granted Dec 3, 2019·0 cites·15 claims
- 3543US2015287818A1Semiconductor structureIND TECH RES INST·Filed 2014·Application pending·0 cites
- 3641US2014159053A1Sic trench gate transistor with segmented field shielding region and method of fabricating the sameIND TECH RES INST·Filed 2013·Application pending·0 cites
- 3740US8835935B2Trench MOS transistor having a trench doped region formed deeper than the trench gateHUNG CHIEN-CHUNG·Filed 2012·Granted Sep 16, 2014·0 cites·17 claims
- 3838US6046107AElectroless copper employing hypophosphite as a reducing agentIND TECH RES INST·Filed 1998·Granted Apr 4, 2000·6 cites·7 claims
- 3937US9685552B2Silicon carbide field effect transistorHESTIA POWER INC·Filed 2015·Granted Jun 20, 2017·0 cites·14 claims
- 4036US2011057321A13-d multi-wafer stacked semiconductor structure and method for manufacturing the sameIND TECH RES INST·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →