Inventor · disambiguated record
Cheng-Chin Lee
Also filed as: LEE CHENG-CHIN
55 granted patents·44 pending applications·146 citations·filing 2002–2025
97Inventor score
Top patents by PatentIndex Score
99 records- 0198US11538749B2Interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 27, 2022·7 cites·20 claims
- 0297US11908792B2Semiconductor device comprising cap layer over dielectric layer and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 20, 2024·3 cites·20 claims
- 0397US11810815B2Dielectric capping structure overlying a conductive structure to increase stabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·3 cites·20 claims
- 0497US11322395B2Dielectric capping structure overlying a conductive structure to increase stabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·4 cites·20 claims
- 0596US11854963B2Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·3 cites·20 claims
- 0696US11355430B2Capping layer overlying dielectric structure to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·4 cites·20 claims
- 0794US12512403B2Method of forming semiconductor device comprising conductive feature, dielectric layer adjacent conductive feature, and etch stop layer on top surface of dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 30, 2025·1 cites·20 claims
- 0894US12176246B2Dielectric capping structure overlying a conductive structure to increase stabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·1 cites·20 claims
- 0993US12132000B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 29, 2024·2 cites·20 claims
- 1092US12230537B2Semiconductor device structure having air gap and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·1 cites·20 claims
- 1192US11189560B2Semiconductor device comprising etch stop layer over dielectric layer and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 30, 2021·6 cites·20 claims
- 1291US11222843B2Interconnect structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 11, 2022·5 cites·20 claims
- 1390US11990400B2Capping layer overlying dielectric structure to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·1 cites·20 claims
- 1489US12009301B2Interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 11, 2024·1 cites·20 claims
- 1587US10930551B2Methods for fabricating a low-resistance interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 23, 2021·3 cites·20 claims
- 1687US10867850B2Selective deposition method for forming semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·5 cites·20 claims
- 1787US2025336716A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1887US2025364400A1Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1986US12412780B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 2086US2025357195A1Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2184US12482743B2Interconnect structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 25, 2025·0 cites·20 claims
- 2284US2025323146A1Novel self-aligned via structure by selective depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2383US12431386B2Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 30, 2025·0 cites·20 claims
- 2483US11658092B2Thermal interconnect structure for thermal management of electrical interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 23, 2023·1 cites·20 claims
- 2583US2025323095A1Semiconductor device structure having air gap and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2682US12463134B2Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 2782US11355390B2Interconnect strucutre with protective etch-stopTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·1 cites·20 claims
- 2881US12278143B2Method of providing a workpiece including low resistance interconnect low-resistance interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 15, 2025·0 cites·20 claims
- 2980US11894266B2Metal capping layer and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 6, 2024·0 cites·20 claims
- 3080US2025279316A1Interconnect structures including air gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3179US12381143B2Self-align via structure by selective depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
- 3279US12033889B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 3379US2025357194A1Interconnect structure with high thermal conductivity and low parasitic capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3479US2025046673A1Thermal interconnect structure for thermal management of electrical interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3578US12165945B2Thermal interconnect structure for thermal management of electrical interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 3678US2024321573A1Using A Self-Assembly Layer To Facilitate Selective Formation of An Etching Stop LayerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3778US2024290718A1Interconnect structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3877US11075113B2Metal capping layer and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·1 cites·20 claims
- 3977US2025357198A1Etch stop layer for interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4076US12308286B2Interconnect structures including air gapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 4176US7068149B2System and method for facilitating delivery and return serviceFIRST CUBE PTE LTD·Filed 2002·Granted Jun 27, 2006·92 cites·22 claims
- 4276US2025329606A1Integrated circuit device including a high thermal conductivity electrically insulating structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4375US11935783B2Selective deposition for integrated circuit interconnect structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
- 4475US11527435B2Metal capping layer and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·0 cites·20 claims
- 4575US2024363528A1Semiconductor structure having dielectric-on-dielectric structure and method for forming the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4675US2024371764A1Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4774US11901221B2Interconnect strucutre with protective etch-stopTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 13, 2024·0 cites·20 claims
- 4874US11227833B2Interconnect structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·1 cites·20 claims
- 4974US2024379416A1Semiconductor device having thermally conductive air gap structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 5074US2024387364A1Semiconductor interconnection structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 99 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →