Inventor · disambiguated record
Chii-Horng Li
Also filed as: LI CHII-HORNG
143 granted patents·55 pending applications·409 citations·filing 2007–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD173TAIWAN SEMICONDUCTOR MFG11CHENG YU-HUNG5CHEN CHIEN HAO2CHUANG HARRY1
Top patents by PatentIndex Score
198 records- 0198US9287382B1Structure and method for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 15, 2016·46 cites·20 claims
- 0297US9831116B2FETS and methods of forming FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·23 cites·20 claims
- 0396US11948999B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·2 cites·20 claims
- 0496US11581425B2Method for manufacturing semiconductor structure with enlarged volumes of source-drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·3 cites·20 claims
- 0595US10453943B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 22, 2019·11 cites·20 claims
- 0695US10038095B2V-shape recess profile for embedded source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·11 cites·20 claims
- 0795US9953875B1Contact resistance control in epitaxial structures of finFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 24, 2018·22 cites·20 claims
- 0894US11728208B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
- 0994US10483396B1Interfacial layer between fin and source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 19, 2019·10 cites·20 claims
- 1094US9287398B2Transistor strain-inducing schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 15, 2016·12 cites·20 claims
- 1193US10170370B2Contact resistance control in epitaxial structures of finFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 1, 2019·10 cites·20 claims
- 1293US8946060B2Methods of manufacturing strained semiconductor devices with facetsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 3, 2015·12 cites·20 claims
- 1392US10103249B2FinFET device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 16, 2018·7 cites·20 claims
- 1492US9691898B2Germanium profile for channel strainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 27, 2017·9 cites·20 claims
- 1592US8455930B2Strained semiconductor device with facetsCHENG YU-HUNG·Filed 2011·Granted Jun 4, 2013·12 cites·20 claims
- 1692US8377784B2Method for fabricating a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 19, 2013·12 cites·19 claims
- 1791US11854901B2Semiconductor method and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 1891US11004724B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·5 cites·19 claims
- 1991US10734520B2MOS devices having epitaxy regions with reduced facetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·3 cites·20 claims
- 2091US9601619B2MOS devices with non-uniform P-type impurity profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Mar 21, 2017·8 cites·20 claims
- 2190US10510607B1Semiconductor device convex source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 2290US9905641B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 27, 2018·5 cites·20 claims
- 2390US9653574B2Selective etching in the formation of epitaxy regions in MOS devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 16, 2017·5 cites·20 claims
- 2490US9263339B2Selective etching in the formation of epitaxy regions in MOS devicesCHENG YU-HUNG·Filed 2010·Granted Feb 16, 2016·10 cites·22 claims
- 2590US8828850B2Reducing variation by using combination epitaxy growthCHENG YU-HUNG·Filed 2011·Granted Sep 9, 2014·9 cites·22 claims
- 2689US12336237B2Source/drain regions of semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 17, 2025·1 cites·20 claims
- 2789US9601574B2V-shaped epitaxially formed semiconductor layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 21, 2017·7 cites·20 claims
- 2889US8927374B2Semiconductor device and fabrication method thereofSU LILLY·Filed 2011·Granted Jan 6, 2015·10 cites·20 claims
- 2989US2025324639A1Fets and methods of forming fetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3088US10084089B2Source and drain stressors with recessed top surfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Sep 25, 2018·3 cites·20 claims
- 3188US9583483B2Source and drain stressors with recessed top surfacesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 28, 2017·5 cites·18 claims
- 3288US9337337B2MOS device having source and drain regions with embedded germanium-containing diffusion barrierTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 10, 2016·7 cites·19 claims
- 3388US9209175B2MOS devices having epitaxy regions with reduced facetsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 8, 2015·5 cites·20 claims
- 3487US9054130B2Bottle-neck recess in a semiconductor devicePENG ERIC·Filed 2010·Granted Jun 9, 2015·9 cites·20 claims
- 3587US8835267B2Semiconductor device and fabrication method thereofLEE YEN-RU·Filed 2011·Granted Sep 16, 2014·9 cites·20 claims
- 3687US8450161B2Method of fabricating a sealing structure for high-k metal gateCHEN CHIEN-HAO·Filed 2012·Granted May 28, 2013·9 cites·20 claims
- 3786US12471311B2Semiconductor Fin-like field-effect transistor (FinFET) device including source/drain structure with boron doped capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 3886US12191393B2Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 7, 2025·1 cites·20 claims
- 3986US10062781B2MOS devices having epitaxy regions with reduced facetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·2 cites·20 claims
- 4086US9517539B2Wafer susceptor with improved thermal characteristicsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 13, 2016·5 cites·20 claims
- 4186US9064688B2Performing enhanced cleaning in the formation of MOS devicesCHENG YU-HUNG·Filed 2012·Granted Jun 23, 2015·8 cites·20 claims
- 4286US8530316B2Method for fabricating a semiconductor deviceCHENG YU-HUNG·Filed 2013·Granted Sep 10, 2013·6 cites·20 claims
- 4386US2025006549A1FETS and Methods of Forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4485US12068395B2Method for forming an undoped region under a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·1 cites·20 claims
- 4585US11205713B2FinFET having a non-faceted top surface portion for a source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 21, 2021·2 cites·20 claims
- 4685US10854602B2FinFET device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·3 cites·20 claims
- 4785US2025351404A1Method for forming an undoped region under a source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4884US10867861B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·3 cites·20 claims
- 4984US9666686B2MOS devices having epitaxy regions with reduced facetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 30, 2017·2 cites·20 claims
- 5084US2023387304A1Method of fabricating a source/drain recess in a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
Showing the top 50 of 198 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →