Inventor · disambiguated record
Chengzhan Li
Also filed as: LI CHENGZHAN
4 granted patents·2 citations·filing 2015–2020
57Inventor score
Files withZHUZHOU CRRC TIMES SEMICONDUCTOR CO LTD2INST OF MICROELECTRONICS CAS1ZHUZHOU CRRC TIMES ELECTRIC CO LTD1
Top patents by PatentIndex Score
4 records- 0158US10475896B2Silicon carbide MOSFET device and method for manufacturing the sameZHUZHOU CRRC TIMES ELECTRIC CO LTD·Filed 2016·Granted Nov 12, 2019·1 cites·27 claims
- 0254US10680067B2Silicon carbide MOSFET device and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2015·Granted Jun 9, 2020·1 cites·11 claims
- 0335US12256569B2Silicon carbide MOSFET device and cell structure thereofZHUZHOU CRRC TIMES SEMICONDUCTOR CO LTD·Filed 2019·Granted Mar 18, 2025·0 cites·9 claims
- 0434US12205991B2Cell structure of silicon carbide MOSFET device, and power semiconductor deviceZHUZHOU CRRC TIMES SEMICONDUCTOR CO LTD·Filed 2020·Granted Jan 21, 2025·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →