Inventor · disambiguated record

Chun-Sheng Liang

Also filed as: LIANG CHUN-SHENG

88 granted patents·39 pending applications·719 citations·filing 2004–2025

99Inventor score

Technology areasH10D H10P H01L H10W H10N

Files withTAIWAN SEMICONDUCTOR MFG CO LTD116 TAIWAN SEMICONDUCTOR MFG6 LIANG CHUN SHENG2 LEE TZYH-CHEANG1 SHEN CHUN-LIANG1

Top patents by PatentIndex Score

127 records

0196US10276676B1Methods of forming metal gate isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·25 cites·20 claims
0295US11923194B2Epitaxial blocking layer for multi-gate devices and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·2 cites·20 claims
0395US10050147B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 14, 2018·9 cites·18 claims
0495US8729634B2FinFET with high mobility and strain channelSHEN CHUN-LIANG·Filed 2012·Granted May 20, 2014·581 cites·20 claims
0594US12087844B2Semiconductor device structure with uniform threshold voltage distribution and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 10, 2024·1 cites·20 claims
0692US10043712B1Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 7, 2018·11 cites·20 claims
0791US11282705B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·2 cites·20 claims
0891US9859273B2Semiconductor structure and manufacturing process thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 2, 2018·6 cites·20 claims
0990US10043910B1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 7, 2018·4 cites·20 claims
1089US10741558B2Nanosheet CMOS device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 11, 2020·5 cites·20 claims
1189US10128156B1FinFET device with reduced parasitic capacitance and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 13, 2018·8 cites·20 claims
1288US7893420B2Phase change memory with various grain sizesTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Feb 22, 2011·13 cites·16 claims
1387US12362229B2Semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 15, 2025·0 cites·20 claims
1487US10269968B2Semiconductor device including fin structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 23, 2019·5 cites·19 claims
1587US9190610B2Methods of forming phase change memory with various grain sizesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 17, 2015·4 cites·20 claims
1685US12310068B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
1785US10854506B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 1, 2020·4 cites·20 claims
1885US10134873B2Semiconductor device gate structure and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 20, 2018·3 cites·20 claims
1985US2025261411A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2084US12376326B2Gate resistance improvement and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
2184US11315785B2Epitaxial blocking layer for multi-gate devices and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 26, 2022·2 cites·20 claims
2284US10770559B2Gate structure and methods of forming metal gate isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 8, 2020·3 cites·20 claims
2384US2025294871A1Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2484US2025098270A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2583US10991805B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 27, 2021·2 cites·20 claims
2683US10403737B2Method of forming a gate structure of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 3, 2019·2 cites·20 claims
2782US8008157B2CMOS device with raised source and drain regionsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Aug 30, 2011·8 cites·19 claims
2882US2024363731A1Semiconductor Device Structure With Uniform Threshold Voltage Distribution and Method of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2981US12199164B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
3080US12324235B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 3, 2025·0 cites·20 claims
3180US12183810B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
3280US12170320B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
3380US12027415B2Semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
3480US8618524B2Phase change memory with various grain sizesLIANG CHUN-SHENG·Filed 2011·Granted Dec 31, 2013·4 cites·18 claims
3580US2025081497A1Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3679US10475895B2Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 12, 2019·2 cites·20 claims
3779US10276574B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 30, 2019·3 cites·29 claims
3879US2025359149A1Transistor structure with low resistance contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3979US2025359314A1Semiconductor structure with high integration density and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4077US12015077B2Metal gate using monolayersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
4177US11043567B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 22, 2021·1 cites·20 claims
4277US2024266167A1Epitaxial blocking layer for multi-gate devices and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4376US11799017B2Semiconductor device structure with uniform threshold voltage distribution and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
4476US11756962B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·0 cites·20 claims
4576US11735662B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 22, 2023·0 cites·20 claims
4676US2025241001A1Gate resistance improvement and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4775US12040237B2Semiconductor device structure with spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
4875US11810978B2Gate resistance improvement and method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 7, 2023·0 cites·20 claims
4975US10714342B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·1 cites·20 claims
5073US11670695B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims

Showing the top 50 of 127 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →