Inventor · disambiguated record
Chen-Hsuan Liao
Also filed as: LIAO CHEN-HSUAN
6 granted patents·7 pending applications·0 citations·filing 2020–2025
68Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD13
Top patents by PatentIndex Score
13 records- 0186US2025359273A1Finfet having a gate dielectric comprising a multi-layer structure including an oxide layer with different thicknesses on side and top surfaces of the finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0276US2024387533A1Bent fin devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0375US11923250B2Fin loss preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 0475US2025118559A1Mandrel structures and methods of fabricating the same in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0575US2024087961A1Fin Loss PreventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0671US2024021612A1Bent fin devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0769US2023124471A1Finfet having a gate dielectric comprising a multi-layer structure including an oxide layer with different thicknesses on side and top surfaces of the finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 0867US2023387213A1Silicon-germanium fins and methods of processing the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 0966US12176212B2Mandrel structures and methods of fabricating the same in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 24, 2024·0 cites·20 claims
- 1066US11791336B2Bent fin devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 17, 2023·0 cites·20 claims
- 1165US11705372B2Fin loss preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 18, 2023·0 cites·20 claims
- 1265US11532718B2FinFET having a gate dielectric comprising a multi-layer structure including an oxide layer with different thicknesses on side and top surfaces of the finsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 1358US12136651B2Silicon-germanium Fins and methods of processing the same in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 5, 2024·0 cites·20 claims
Join the waitlist — get patent alerts
Get an alert when Chen-Hsuan Liao files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →