Inventor · disambiguated record
Chun-Cheng Liao
Also filed as: LIAO CHUN-CHENG
11 granted patents·9 pending applications·35 citations·filing 2002–2024
84Inventor score
Top patents by PatentIndex Score
20 records- 0194US10720509B1Method for preparing a semiconductor device structure with an annular semiconductor finNANYA TECHNOLOGY CORP·Filed 2019·Granted Jul 21, 2020·14 cites·15 claims
- 0293US11282790B1Semiconductor device with composite landing pad for metal plugNANYA TECHNOLOGY CORP·Filed 2020·Granted Mar 22, 2022·3 cites·18 claims
- 0391US12112978B2Method for fabricating semiconductor device with redistribution plugsNANYA TECHNOLOGY CORP·Filed 2022·Granted Oct 8, 2024·2 cites·20 claims
- 0477US7014965B2Photolithography method for reducing effects of lens aberrationNANYA TECHNOLOGY CORP·Filed 2003·Granted Mar 21, 2006·16 cites·18 claims
- 0574US2025070017A1Semiconductor device with redistribution plugs and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 0669US2024047400A1Semiconductor device with interconnect structure having graphene layer and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 0766US11587876B2Method for preparing semiconductor device with composite landing padNANYA TECHNOLOGY CORP·Filed 2021·Granted Feb 21, 2023·0 cites·18 claims
- 0865US12315793B2Semiconductor device with redistribution plugsNANYA TECHNOLOGY CORP·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 0963US11587934B2Method for preparing semiconductor memory device with air gaps between conductive featuresNANYA TECHNOLOGY CORP·Filed 2021·Granted Feb 21, 2023·0 cites·8 claims
- 1062US2023268303A1Semiconductor device with interconnect structure having graphene layer and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2022·Application pending·0 cites
- 1158US11264390B2Semiconductor memory device with air gaps between conductive features and method for preparing the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Mar 1, 2022·0 cites·18 claims
- 1257US12288748B2Semiconductor device structure with silicide portion between conductive plugsNANYA TECHNOLOGY CORP·Filed 2021·Granted Apr 29, 2025·0 cites·18 claims
- 1354US12080598B2Method for preparing semiconductor device structure with silicide portion between conductive plugsNANYA TECHNOLOGY CORP·Filed 2021·Granted Sep 3, 2024·0 cites·11 claims
- 1453US11063050B2Semiconductor device with air gaps and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2019·Granted Jul 13, 2021·0 cites·16 claims
- 1544US2009225390A1Feedback system and feedback method for controlling power ratio of incident lightLIN CHIA-WEI·Filed 2008·Application pending·0 cites
- 1641US2020411688A1Semiconductor device with anti-hot electron effect capabilityNANYA TECHNOLOGY CORP·Filed 2019·Application pending·0 cites
- 1741US2020199744A1Method for preparing multilayer structureNANYA TECHNOLOGY CORP·Filed 2019·Application pending·0 cites
- 1840US2020185345A1Semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2019·Application pending·0 cites
- 1937US2004079729A1Process for etching metal layerNANYA TECHNOLOGY CORP·Filed 2003·Application pending·0 cites
- 2033US2003096200A1Method of forming isolated lines using multiple exposureNANYA TECHNOLOGY CORP·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →