Inventor · disambiguated record
Chia-Yang Liao
Also filed as: LIAO CHIA-YANG
8 granted patents·1 pending application·15 citations·filing 2015–2025
79Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD9
Top patents by PatentIndex Score
9 records- 0195US10262870B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 16, 2019·13 cites·20 claims
- 0292US12125891B2Semiconductor device having gate spacers extending below a fin top surfaceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 22, 2024·2 cites·20 claims
- 0378US11854825B2Gate structure of semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 0477US12218216B2Method for manufacturing semiconductor devices having gate spacers with bottom portions recessed in a finTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 0572US11309189B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·0 cites·20 claims
- 0670US2025151368A1Gate Spacers in Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0764US10741408B2Fin field effect transistor (FinFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 11, 2020·0 cites·20 claims
- 0861US10943977B2GAA FET with U-shaped channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·0 cites·20 claims
- 0959US10510840B2GAA FET with u-shaped channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·0 cites·18 claims
Join the waitlist — get patent alerts
Get an alert when Chia-Yang Liao files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →