Inventor · disambiguated record
Chan Lim
Also filed as: LIM CHAN · LIM CHAN KYU
34 granted patents·3 pending applications·502 citations·filing 1994–2023
97Inventor score
Files withHYUNDAI ELECTRONICS IND16INFINEON TECHNOLOGIES AG4SAMSUNG ELECTRONICS CO LTD3SK HYNIX INC3MCGINNIS ARTHUR J2
Top patents by PatentIndex Score
37 records- 0193US6426307B2Method of manufacturing an aluminum oxide film in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Jul 30, 2002·71 cites·6 claims
- 0292US8173507B2Methods of forming integrated circuitry comprising charge storage transistorsLIM CHAN·Filed 2010·Granted May 8, 2012·63 cites·23 claims
- 0386US6403156B2Method of forming an A1203 film in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Jun 11, 2002·43 cites·13 claims
- 0483US6589886B2Method for manufacturing aluminum oxide film for use in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Jul 8, 2003·32 cites·16 claims
- 0582US8293617B2Gap processingMCGINNIS ARTHUR J·Filed 2011·Granted Oct 23, 2012·6 cites·26 claims
- 0682US8058138B2Gap processingMCGINNIS ARTHUR J·Filed 2008·Granted Nov 15, 2011·9 cites·25 claims
- 0782US6465371B2Method for manufacturing zirconium oxide film for use in semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Oct 15, 2002·26 cites·24 claims
- 0881US6387749B1Method of manufacturing a capacitor in a semiconductor deviceHYUNDAI ELECTRONICS CO LTD·Filed 2000·Granted May 14, 2002·26 cites·9 claims
- 0976US5478769AProcess for fabricating a stashed capacitor in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1994·Granted Dec 26, 1995·39 cites·9 claims
- 1074US7405482B2High-k dielectric film, method of forming the same and related semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2006·Granted Jul 29, 2008·4 cites·11 claims
- 1174US6303427B1Method of manufacturing a capacitor in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2000·Granted Oct 16, 2001·14 cites·6 claims
- 1271US7923336B2High-k dielectric film, method of forming the same and related semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2009·Granted Apr 12, 2011·3 cites·10 claims
- 1371US7655099B2High-k dielectric film, method of forming the same and related semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2008·Granted Feb 2, 2010·3 cites·4 claims
- 1470US6743541B2Monopolar cell pack of proton exchange membrane fuel cell and direct methanol fuel cellSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Jun 1, 2004·11 cites·20 claims
- 1567US9293319B2Removal of metalDOLAN BRIAN·Filed 2011·Granted Mar 22, 2016·2 cites·26 claims
- 1667US6355516B1Method of manufacturing a capacitor with a bi-layer Ta2O5 capacitor dielectric in a semiconductor device including performing a plasma treatment on the first Ta2O5 layerHYUNDAI ELECTRONICS IND·Filed 2000·Granted Mar 12, 2002·11 cites·17 claims
- 1767US5985730AMethod of forming a capacitor of a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1998·Granted Nov 16, 1999·26 cites·20 claims
- 1866US11114173B2Semiconductor memory device and method of operating the sameSK HYNIX INC·Filed 2019·Granted Sep 7, 2021·2 cites·10 claims
- 1966US6113134AAirbag system of automotive vehicleHYUNDAI MOTOR CO LTD·Filed 1999·Granted Sep 5, 2000·29 cites·4 claims
- 2065US10847226B2Semiconductor device and operating method of a semiconductor deviceSK HYNIX INC·Filed 2018·Granted Nov 24, 2020·2 cites·20 claims
- 2165US6559000B2Method of manufacturing a capacitor in a semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2001·Granted May 6, 2003·9 cites·32 claims
- 2263US6486021B2Method for manufacturing a semiconductor device having incorporated therein a high K capacitor dielectricHYUNDAI ELECTRONICS IND·Filed 2000·Granted Nov 26, 2002·7 cites·16 claims
- 2362US6723598B2Method for manufacturing aluminum oxide films for use in semiconductor devicesHYUNDAI ELECTRONICS IND·Filed 2000·Granted Apr 20, 2004·8 cites·24 claims
- 2462US6344428B1Method of forming catalyst layer for fuel cellSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Feb 5, 2002·26 cites·13 claims
- 2560US10453673B2Removal of metalMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 22, 2019·0 cites·20 claims
- 2657US7399702B2Methods of forming silicideINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jul 15, 2008·1 cites·33 claims
- 2756US9887077B2Removal of metalMICRON TECHNOLOGY INC·Filed 2016·Granted Feb 6, 2018·0 cites·19 claims
- 2854US2024124979A1Semiconductor manufacturing apparatus, gas supplying method using the same, and semiconductor manufacturing method using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Application pending·0 cites
- 2952US6417042B2Method of manufacturing a capacitor in a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 2001·Granted Jul 9, 2002·3 cites·18 claims
- 3041US6329237B1Method of manufacturing a capacitor in a semiconductor device using a high dielectric tantalum oxide or barium strontium titanate material that is treated in an ozone plasmaHYUNDAI ELECTRONICS IND·Filed 1999·Granted Dec 11, 2001·8 cites·18 claims
- 3141US5909625AMethod for forming layer of hemispherical grains and for fabricating a capacitor of a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1997·Granted Jun 1, 1999·7 cites·6 claims
- 3240US2002025649A1Method of manufacturing a capacitor in a semiconductor deviceFiled 2001·Application pending·0 cites
- 3338US6281066B1Method of manufacturing a capacitor in a memory deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Aug 28, 2001·6 cites·18 claims
- 3437US10403367B2Semiconductor memory device and method of operating the sameSK HYNIX INC·Filed 2017·Granted Sep 3, 2019·0 cites·17 claims
- 3535US6153481AMethod for forming an isolation insulating film for internal elements of a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1998·Granted Nov 28, 2000·5 cites·13 claims
- 3633US2002043675A1Memory device incorporating therein a HfO2 layer as a barrier layerFiled 2001·Application pending·0 cites
- 3730US6238995B1Method for forming layer of hemispherical grains and for fabricating a capacitor of a semiconductor deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted May 29, 2001·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →