Inventor · disambiguated record
Chun-Hsiung Lin
Also filed as: LIN CHUN-HSIUNG
115 granted patents·9 pending applications·1,742 citations·filing 1988–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD101TAIWAN SEMICONDUCTOR MFG9ASIA OPTICAL CO INC3MACASE IND GROUP GA INC3LATSHAW ENTERPRISES INC2
Top patents by PatentIndex Score
124 records- 0199US10109721B2Horizontal gate-all-around device having wrapped-around source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 23, 2018·140 cites·20 claims
- 0299US9536738B2Vertical gate all around (VGAA) devices and methods of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·878 cites·20 claims
- 0398US12148836B2Gate-all-around structure and methods of forming the samePARABELLUM STRATEGIC OPPORTUNITIES FUND LLC·Filed 2023·Granted Nov 19, 2024·3 cites·20 claims
- 0498US11929417B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·2 cites·20 claims
- 0598US11637207B2Gate-all-around structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·3 cites·20 claims
- 0698US9754840B2Horizontal gate-all-around device having wrapped-around source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 5, 2017·18 cites·20 claims
- 0797US11996483B2FET with wrap-around silicide and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 28, 2024·2 cites·20 claims
- 0897US11777009B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·2 cites·20 claims
- 0997US6462944B1Computer cabinet cooling systemMACASE IND GROUP GA INC·Filed 2000·Granted Oct 8, 2002·201 cites·4 claims
- 1097US5927386AComputer hard drive heat sink assemblyMACASE IND GROUP GA INC·Filed 1998·Granted Jul 27, 1999·182 cites·10 claims
- 1196US10923598B2Gate-all-around structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Feb 16, 2021·10 cites·20 claims
- 1296US9941374B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·10 cites·20 claims
- 1396US9716096B1Semiconductor structure with feature spacer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 25, 2017·16 cites·20 claims
- 1496US9543419B1FinFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 10, 2017·25 cites·20 claims
- 1596US9508858B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 29, 2016·11 cites·20 claims
- 1695US10497792B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 3, 2019·6 cites·20 claims
- 1795US9536962B1Source/drain regions for high electron mobility transistors (HEMT) and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·10 cites·20 claims
- 1894US12119404B2Gate all around structure with additional silicon layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 15, 2024·1 cites·20 claims
- 1994US11961892B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·1 cites·20 claims
- 2094US11695076B2FET with wrap-around silicide and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 4, 2023·2 cites·20 claims
- 2194US11532521B2Dual channel gate all around transistor device and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·2 cites·20 claims
- 2294US11374108B2Fin semiconductor device having a stepped gate spacer sidewallTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·3 cites·20 claims
- 2394US9564363B1Method of forming butted contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·12 cites·20 claims
- 2493US11276763B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 15, 2022·4 cites·20 claims
- 2593US11158727B2Structure and method for gate-all-around device with extended channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 26, 2021·8 cites·20 claims
- 2693US10944009B2Methods of fabricating a FinFET device with wrap-around silicide source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·5 cites·20 claims
- 2792US11348836B2Semiconductor structure with nanostructure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·2 cites·20 claims
- 2892US10804162B2Dual channel gate all around transistor device and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·4 cites·20 claims
- 2992US10510860B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·5 cites·20 claims
- 3091US11777033B2Transistors having vertical nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 3, 2023·2 cites·20 claims
- 3191US9312186B1Method of forming horizontal gate all around structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 12, 2016·10 cites·20 claims
- 3290US2025311371A1Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3389US10847373B2Methods of forming silicide contact in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 24, 2020·3 cites·20 claims
- 3489US10157995B2Integrating junction formation of transistors with contact formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 18, 2018·9 cites·20 claims
- 3589USD508902SMobile phone having rotatable cameraASIA OPTICAL CO LTD·Filed 2004·Granted Aug 30, 2005·44 cites·1 claims
- 3688US12439638B2FET with wrap-around silicide and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Oct 7, 2025·0 cites·20 claims
- 3788US10727134B2Methods of fabricating semiconductor devices with gate-all-around structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·3 cites·20 claims
- 3888US10438948B2Method and device of preventing merging of resist-protection-oxide (RPO) between adjacent structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 8, 2019·4 cites·20 claims
- 3986US12336261B2Contacts for highly scaled transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 17, 2025·0 cites·20 claims
- 4086US12198986B2Dual channel gate all around transistor device and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 4185US12148673B2FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 4285US10847426B2FinFET devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·2 cites·20 claims
- 4384US12218210B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Feb 4, 2025·0 cites·20 claims
- 4484US12009216B2Methods of forming silicide contact in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 11, 2024·0 cites·20 claims
- 4584US10811515B2Methods of fabricating semiconductor devices having air-gap spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 20, 2020·2 cites·20 claims
- 4684US9048301B2Nanowire MOSFET with support structures for source and drainTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 2, 2015·4 cites·23 claims
- 4784US2024387287A1Finfet devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4883US11264485B2Spacer structure for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 1, 2022·2 cites·20 claims
- 4983US10734500B2Horizontal gate all-around device having wrapped-around source and drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 4, 2020·2 cites·20 claims
- 5083US10002796B1Dual epitaxial growth process for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 19, 2018·3 cites·20 claims
Showing the top 50 of 124 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →