Inventor · disambiguated record
Chun-Jun Lin
Also filed as: LIN CHUN-JUN
14 granted patents·11 pending applications·46 citations·filing 2002–2025
88Inventor score
Top patents by PatentIndex Score
25 records- 0181US6942320B2Integrated micro-droplet generatorIND TECH RES INST·Filed 2002·Granted Sep 13, 2005·23 cites·10 claims
- 0278US12300698B2Isolation structure for preventing unintentional merging of epitaxially grown source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 0378US2025338467A1Co-optimization of memory and logic devices by source/drain modulation and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0477US2025311420A1Semiconductor device having different source/drain junction depths and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0575US7240433B2Method of fabricating a thermal inkjet head having a symmetrical heaterIND TECH RES INST·Filed 2005·Granted Jul 10, 2007·4 cites·10 claims
- 0675US2025324736A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0774US2025287669A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0873US11990525B2Isolation structure for isolating epitaxially grown source/drain regions and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 0972US11749683B2Isolation structure for preventing unintentional merging of epitaxially grown source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 5, 2023·0 cites·20 claims
- 1069US12336282B2Semiconductor device having different source/drain junction depths and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 1167US12317567B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 1267US11315924B2Isolation structure for preventing unintentional merging of epitaxially grown source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 1367US6951622B2Method for fabricating an integrated nozzle plate and multi-level micro-fluidic devices fabricatedIND TECH RES INST·Filed 2002·Granted Oct 4, 2005·12 cites·14 claims
- 1466US11349002B2Isolation structure for for isolating epitaxially grown source/drain regions and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·0 cites·20 claims
- 1565US12414355B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
- 1664US2023320058A1Co-optimization of memory and logic devices by source/drain modulation and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1758US7252776B2Method for fabricating a thermal bubble inkjet print head with rapid ink refill mechanism and off-shooter heaterIND TECH RES INST·Filed 2005·Granted Aug 7, 2007·1 cites·10 claims
- 1857US12205849B2Semiconductor device structure with source/drain structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 21, 2025·0 cites·20 claims
- 1957US7011392B2Integrated inkjet print head with rapid ink refill mechanism and off-shooter heaterIND TECH RES INST·Filed 2002·Granted Mar 14, 2006·6 cites·10 claims
- 2055US2025031436A1Structure and formation method of semiconductor device with semiconductor nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2152US2025113574A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2251US2024063294A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2351US2024021685A1Co-optimization of finfet devices by source/drain modulation and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2451US2024047561A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2550US2024113188A1Integrated circuit structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →