Inventor · disambiguated record
Chi-Yen Lin
Also filed as: LIN CHI-YEN
37 granted patents·11 pending applications·86 citations·filing 2007–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30HUANG JIUN-JIE5TAIWAN SEMICONDUCTOR MFG4CHEN CHAO-HSUING3DAXIN MATERIALS CORP3
Top patents by PatentIndex Score
48 records- 0192US10748911B2Integrated circuit for low power SRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·7 cites·20 claims
- 0292US9142642B2Methods and apparatus for doped SiGe source/drain stressor depositionCHEN CHAO-HSUING·Filed 2012·Granted Sep 22, 2015·17 cites·18 claims
- 0388US7714145B22-2′-disubstituted 9,9′-spirobifluorene-base triaryldiamines and their applicationTSAI MING-HAN·Filed 2007·Granted May 11, 2010·19 cites·8 claims
- 0487US10163831B2Semiconductor device with post passivation structure and fabrication method thereforTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·4 cites·20 claims
- 0587US9324836B2Methods and apparatus for doped SiGe source/drain stressor depositionTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Apr 26, 2016·4 cites·20 claims
- 0683US12381166B2Method of making semiconductor structure including buffer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
- 0782US9385215B2V-shaped SiGe recess volume trim for improved device performance and layout dependenceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 5, 2016·4 cites·20 claims
- 0881US10734489B2Method for forming semiconductor device structure with metal silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 4, 2020·2 cites·20 claims
- 0980US9735252B2V-shaped SiGe recess volume trim for improved device performance and layout dependenceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 15, 2017·2 cites·20 claims
- 1080US2024349475A1Integrated circuit structure for low power sramTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1180US2025351358A1Memory device with improved data retentionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1279US9722082B2Methods and apparatus for doped SiGe source/drain stressor depositionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·2 cites·20 claims
- 1379US8766256B2SiGe SRAM butted contact resistance improvementCHEN CHAO-HSUING·Filed 2012·Granted Jul 1, 2014·5 cites·12 claims
- 1478US8940594B2Semiconductor device having v-shaped regionTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jan 27, 2015·4 cites·20 claims
- 1578US2025357215A1Package structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1678US2025357224A1Device package and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1777US8558350B2Metal-oxide-metal capacitor structureHUANG JIUN-JIE·Filed 2011·Granted Oct 15, 2013·5 cites·20 claims
- 1876US11810879B2Semiconductor structure including buffer layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·0 cites·20 claims
- 1975US12052851B2Integrated circuit structure for low power SRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 30, 2024·0 cites·20 claims
- 2073US10703945B2Method for temporary bonding workpiece and adhesiveDAXIN MATERIALS CORP·Filed 2019·Granted Jul 7, 2020·2 cites·17 claims
- 2173US9064841B2Metal-oxide-metal capacitor apparatus with a via-hole regionHUANG JIUN-JIE·Filed 2011·Granted Jun 23, 2015·4 cites·22 claims
- 2273US2025316569A1Surface treatment in integrated circuit package and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2371US12183793B2Method for forming semiconductor device structure with metal-semiconductor compound layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 31, 2024·0 cites·20 claims
- 2471US11309268B2Method of designing a layout, method of making a semiconductor structure and semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·0 cites·20 claims
- 2570US2025266303A1Device package and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2669US9196545B2SiGe SRAM butted contact resistance improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 24, 2015·2 cites·20 claims
- 2769US2025062201A1Surface treatment in integrated circuit package and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2867US11101354B2Method for forming semiconductor device structure with metal silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 24, 2021·0 cites·19 claims
- 2966US2024153821A1Package structure having a stacked semiconductor dies with wavy sidewalls and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3065US11462550B2SRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 4, 2022·0 cites·20 claims
- 3161US9337126B2Integrated circuit and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 10, 2016·2 cites·20 claims
- 3260US10727191B2Semiconductor device with post passivation structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·0 cites·20 claims
- 3360US2025372536A1Back-side warpage control layer to improve bonding bulge / non-bondingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3459US2025349811A1Semiconductor module including a corner die over a side of a semiconductor die, package structure including the semiconductor module and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3558US10158004B2Source/drain recess volume trim for improved device performance and layout dependenceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·0 cites·20 claims
- 3654US2024112924A1Integrated circuit packages and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3752US11653498B2Memory device with improved data retentionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 16, 2023·0 cites·20 claims
- 3852US9099421B2Surface profile for semiconductor regionTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Aug 4, 2015·0 cites·20 claims
- 3951US9269812B2Semiconductor device having V-shaped regionTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Feb 23, 2016·0 cites·20 claims
- 4050US9310425B2Reliability assessment of capacitor deviceJIUN-JIE HUANG·Filed 2011·Granted Apr 12, 2016·1 cites·17 claims
- 4150US8468474B2Reducing metal pits through optical proximity correctionHUANG JIUN-JIE·Filed 2012·Granted Jun 18, 2013·0 cites·10 claims
- 4248US10236512B2Preparation method of battery composite material and precursor thereofADVANCED LITHIUM ELECTROCHEMISTRY CO LTD·Filed 2014·Granted Mar 19, 2019·0 cites·13 claims
- 4346US11794381B2Laser-debondable composition, laminate thereof, and laser-debonding methodDAXIN MATERIALS CORP·Filed 2021·Granted Oct 24, 2023·0 cites·10 claims
- 4446US9831314B2Surface profile for semiconductor regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 28, 2017·0 cites·20 claims
- 4546US8341562B1Reducing metal pits through optical proximity correctionHUANG JIUN-JIE·Filed 2011·Granted Dec 25, 2012·0 cites·10 claims
- 4645US9053974B2SRAM cells with dummy insertionsCHEN CHAO-HSUING·Filed 2012·Granted Jun 9, 2015·0 cites·20 claims
- 4741US12043770B2Temporary bonding composition, temporary bonding film, composite film, temporary bonding method and semiconductor wafer packageDAXIN MATERIALS CORP·Filed 2019·Granted Jul 23, 2024·0 cites·6 claims
- 4841US8476629B2Enhanced wafer test line structureHUANG JIUN-JIE·Filed 2011·Granted Jul 2, 2013·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →