Inventor · disambiguated record

Chih-Yu Lin

Also filed as: LIN CHIH-YU · LIN CHIH-YU JOE

96 granted patents·28 pending applications·187 citations·filing 2004–2025

99Inventor score

Technology areasG11C H10W H10D G06F H10P

Files withTAIWAN SEMICONDUCTOR MFG CO LTD87 TAIWAN SEMICONDUCTOR MFG7 SILICON MOTION INC4 INNOLUX CORP3 INST INFORMATION INDUSTRY3

Top patents by PatentIndex Score

124 records

0197US12029023B2Memory array circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 2, 2024·2 cites·20 claims
0296US11404113B2Memory device including a word line with portions with different sizes in different metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·5 cites·20 claims
0395US11657870B2Method and system to balance ground bounceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 23, 2023·2 cites·20 claims
0495US11637108B2Memory array circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 25, 2023·2 cites·20 claims
0595US11569246B2Four CPP wide memory cell with buried power grid, and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 31, 2023·3 cites·20 claims
0694US10950298B1Mixed threshold voltage memory arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 16, 2021·4 cites·20 claims
0794US10650882B2Static random access memory with a supplementary driver circuit and method of controlling the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 12, 2020·16 cites·20 claims
0893US12137548B2Four CPP wide memory cell with buried power grid, and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 5, 2024·1 cites·20 claims
0993US11074966B2Method and system to balance ground bounceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·6 cites·20 claims
1092US10411019B2SRAM cell word line structure with reduced RC effectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 10, 2019·6 cites·20 claims
1192US10153035B2SRAM-based authentication circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 11, 2018·9 cites·16 claims
1291US2025364038A1Memory device and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1390US11018142B2Memory cell and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 25, 2021·4 cites·20 claims
1490US2025331147A1Memory array circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1589US9449661B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·8 cites·20 claims
1688US12408316B2Memory array circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 2, 2025·0 cites·20 claims
1787US9105326B2Memory device and method for writing thereforTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Aug 11, 2015·8 cites·20 claims
1887US8773923B2Memory device and method for writing thereforCHEN YEN-HUEI·Filed 2012·Granted Jul 8, 2014·8 cites·20 claims
1986US10734066B2Static random access memory with write assist circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 4, 2020·6 cites·20 claims
2086US9865605B2Memory circuit having resistive device coupled with supply voltage lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·4 cites·20 claims
2185US9524920B2Apparatus and method of three dimensional conductive linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 20, 2016·5 cites·14 claims
2285US8559251B2Memory circuit and method of writing datum to memory circuitLIN CHIH-YU·Filed 2012·Granted Oct 15, 2013·11 cites·20 claims
2384US2024386945A1Memory device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2483US2025054537A1Method and system to balance ground bounceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2582US9813286B2Method for virtual local area network fail-over management, system therefor and apparatus therewithIND TECH RES INST·Filed 2015·Granted Nov 7, 2017·6 cites·32 claims
2682US2025318098A1Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2782US2025349326A1Semiconductor memory devices with flying bit lines and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2882US2025364016A1Memory devices with reduced bit line capacitance and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2981US10163759B2Apparatus and method of three dimensional conductive linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·2 cites·20 claims
3081US7376099B2Methods and systems of dynamic channel allocation for access points in wireless networksINST INFORMATION INDUSTRY·Filed 2004·Granted May 20, 2008·32 cites·12 claims
3180US12369292B2Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
3280US12100436B2Method and system to balance ground bounceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims
3380US10672776B2Memory circuit having resistive device coupled with supply voltage lineTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 2, 2020·3 cites·20 claims
3480US10373964B2Method of writing to memory circuit using resistive deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 6, 2019·2 cites·20 claims
3580US2025063709A1Memory cell with buried power grid, and method of fabricating sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3679US11870477B2Transmission structure of antenna and proximity sensing circuitSENSORTEK TECH CORP·Filed 2021·Granted Jan 9, 2024·1 cites·12 claims
3779US10783954B2Semiconductor memory with respective power voltages for memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 22, 2020·3 cites·20 claims
3879US10770134B2SRAM based authentication circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 8, 2020·3 cites·20 claims
3979US2025351322A1Memory device and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4078US9064741B1Uniformity in wafer patterning using feedback controlTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 23, 2015·3 cites·20 claims
4177US12367929B2Memory device having a negative voltage circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
4277US12245412B2SRAM cell word line structure with reduced RC effectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
4377US12176026B2Static random access memory with a supplementary driver circuit and method of controlling the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
4475US12422954B2Proximity sensor and proximity sensing methodSENSORTEK TECH CORP·Filed 2023·Granted Sep 23, 2025·0 cites·6 claims
4575US12125523B2Memory device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 22, 2024·0 cites·20 claims
4675US10651114B2Apparatus and method of three dimensional conductive linesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·2 cites·20 claims
4774US10714181B2Memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 14, 2020·1 cites·18 claims
4874US8295627B2Circuit for controlling color sequential liquid crystal display and method for controlling the sameLIN CHIH-YU·Filed 2008·Granted Oct 23, 2012·5 cites·18 claims
4974US2025220868A1Memory device and method of operating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
5073US12230318B2Memory device including a word line with portions with different sizes in different metal layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 18, 2025·0 cites·20 claims

Showing the top 50 of 124 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →