Inventor · disambiguated record
Chrong-Jung Lin
Also filed as: LIN CHRONG · LIN CHRONG-JUNG
104 granted patents·37 pending applications·2,055 citations·filing 1997–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG51TAIWAN SEMICONDUCTOR MFG CO LTD32LIN CHRONG-JUNG20EMEMORY TECHNOLOGY INC7UNIV NAT TSING HUA7
Top patents by PatentIndex Score
141 records- 0196US12051466B2Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 30, 2024·2 cites·20 claims
- 0296US6074915AMethod of making embedded flash memory with salicide and sac structureTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jun 13, 2000·146 cites·47 claims
- 0395US11824133B2Detection using semiconductor detectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 21, 2023·3 cites·20 claims
- 0495US6583466B2Vertical split gate flash memory device in an orthogonal array of rows and columns with devices in columns having shared source regionsTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 24, 2003·83 cites·16 claims
- 0595US6576558B1High aspect ratio shallow trench using silicon implanted oxideTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 10, 2003·113 cites·16 claims
- 0695US6548856B1Vertical stacked gate flash memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 15, 2003·61 cites·3 claims
- 0795US6093606AMethod of manufacture of vertical stacked gate flash memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jul 25, 2000·106 cites·8 claims
- 0894US11646079B2Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 9, 2023·4 cites·13 claims
- 0994US6207532B1STI process for improving isolation for deep sub-micron applicationTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 27, 2001·175 cites·21 claims
- 1094US6013551AMethod of manufacture of self-aligned floating gate, flash memory cell and device manufactured therebyTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jan 11, 2000·98 cites·15 claims
- 1192US6133096AProcess for simultaneously fabricating a stack gate flash memory cell and salicided periphereral devicesFiled 1998·Granted Oct 17, 2000·97 cites·29 claims
- 1291US6127227AThin ONO thickness control and gradual gate oxidation suppression by b. N.su2 treatment in flash memoryTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 3, 2000·97 cites·36 claims
- 1389US6037223AStack gate flash memory cell featuring symmetric self aligned contact structuresTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 14, 2000·68 cites·30 claims
- 1487US6391719B1Method of manufacture of vertical split gate flash memory deviceTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted May 21, 2002·33 cites·16 claims
- 1587US6124177AMethod for making deep sub-micron mosfet structures having improved electrical characteristicsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 26, 2000·74 cites·28 claims
- 1687US2025364047A1Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1786US12424279B2Memory cell including programmable resistors with transistor componentsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·19 claims
- 1886US6724036B1Stacked-gate flash memory cell with folding gate and increased coupling ratioTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 20, 2004·40 cites·4 claims
- 1985US12426517B2Resistive memory device with protrusion covered with resistance changing element and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 23, 2025·0 cites·20 claims
- 2085US12009177B2Detection using semiconductor detectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 11, 2024·1 cites·20 claims
- 2185US6734055B1Multi-level (4 state/2-bit) stacked gate flash memory cellTAIWAN SEMICONDUCTOR MANUFACTO·Filed 2002·Granted May 11, 2004·30 cites·18 claims
- 2285US6153494AMethod to increase the coupling ratio of word line to floating gate by lateral coupling in stacked-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Nov 28, 2000·70 cites·28 claims
- 2384US7952159B2Photo sensor and flat display panelAU OPTRONICS CORP·Filed 2008·Granted May 31, 2011·6 cites·13 claims
- 2484US6465836B2Vertical split gate field effect transistor (FET) deviceTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 15, 2002·40 cites·6 claims
- 2582US12211949B2Semiconductor detectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 2682US8384155B2Semiconductor capacitorEMEMORY TECHNOLOGY INC·Filed 2007·Granted Feb 26, 2013·8 cites·14 claims
- 2782US7829920B2Photo detector and a display panel having the sameAU OPTRONICS CORP·Filed 2008·Granted Nov 9, 2010·6 cites·14 claims
- 2882US2025299756A1One-time-programmable memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2982US2025359489A1Resistive memory device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3082US2025142985A1Semiconductor detectorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3181US11043601B2Non-volatile memory cell and non-volatile memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 22, 2021·2 cites·20 claims
- 3281US8107274B2Variable and reversible resistive element, non-volatile memory device and methods for operating and manufacturing the non-volatile memory deviceLIN CHRONG-JUNG·Filed 2009·Granted Jan 31, 2012·8 cites·12 claims
- 3381US6172395B1Method of manufacture of self-aligned floating gate, flash memory cell and device manufactured therebyTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jan 9, 2001·37 cites·10 claims
- 3480US12347504B2One-time-programmable memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
- 3580US9831130B2Method for forming semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 28, 2017·3 cites·20 claims
- 3680US2025355363A1Semiconductor fabrication apparatus and method of using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3779US6586765B2Wafer-level antenna effect detection pattern for VLSITAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jul 1, 2003·20 cites·8 claims
- 3878US9209225B2Cell structure of resistive non-volatile memory and manufacturing method thereofLIN CHRONG-JUNG·Filed 2014·Granted Dec 8, 2015·3 cites·22 claims
- 3978US2025126929A1Semiconductor structure with conductive ringsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4077US6297099B1Method to free control tunneling oxide thickness on poly tip of flashTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Oct 2, 2001·24 cites·23 claims
- 4176US6787418B2Method of making the selection gate in a split-gate flash eeprom cell and its structureTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 7, 2004·16 cites·6 claims
- 4276US6297098B1Tilt-angle ion implant to improve junction breakdown in flash memory applicationTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 2, 2001·38 cites·14 claims
- 4376US6127226AMethod for forming vertical channel flash memory cell using P/N junction isolationTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 3, 2000·34 cites·32 claims
- 4475US12041860B2Resistive memory device and method for manufacturing with protrusion of electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 4575US6133097AMethod for forming mirror image split gate flash memory devices by forming a central source line slotTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Oct 17, 2000·27 cites·15 claims
- 4675US6130168AUsing ONO as hard mask to reduce STI oxide loss on low voltage device in flash or EPROM processTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 10, 2000·47 cites·20 claims
- 4775US6011288AFlash memory cell with vertical channels, and source/drain bus linesTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jan 4, 2000·33 cites·1 claims
- 4875US6001687AProcess for forming self-aligned source in flash cell using SiN spacer as hard maskTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 14, 1999·31 cites·17 claims
- 4974US12249662B2Semiconductor device, manufacturing method thereof, and detecting method using the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 11, 2025·0 cites·20 claims
- 5074US8143090B2Method of fabricating photo sensorWENG CHIEN-SEN·Filed 2011·Granted Mar 27, 2012·1 cites·12 claims
Showing the top 50 of 141 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →