Inventor · disambiguated record
Chia-Wen Liu
Also filed as: LIU CHIA WEN
30 granted patents·95 citations·filing 2000–2022
95Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD24DHANYAKUMAR MAHAVEER SATHAIYA1LIU CHIA-WEN1LU JUI-MEI1TAIWAN SEMICONDUCTOR MFG1
Top patents by PatentIndex Score
30 records- 0197US9196730B1Variable channel strain of nanowire transistors to improve drive currentTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 24, 2015·29 cites·17 claims
- 0294US11152338B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 19, 2021·3 cites·20 claims
- 0392US10672742B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 2, 2020·9 cites·20 claims
- 0488US9620591B2Semiconductor structures and methods for multi-level work function and multi-valued channel doping of nanowire transistors to improve drive currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 11, 2017·6 cites·15 claims
- 0588US9224814B2Process design to improve transistor variations and performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 29, 2015·7 cites·20 claims
- 0687US10008603B2Multi-gate device and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 26, 2018·3 cites·15 claims
- 0787US9929245B2Semiconductor structures and methods for multi-level work functionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 27, 2018·4 cites·20 claims
- 0885US9564431B2Semiconductor structures and methods for multi-level work functionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 7, 2017·6 cites·19 claims
- 0984US9484460B2Semiconductor device having gate dielectric surrounding at least some of channel region and gate electrode surrounding at least some of gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Nov 1, 2016·4 cites·20 claims
- 1080US11955554B2Method of fabricating a multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 9, 2024·0 cites·20 claims
- 1180US9536746B2Recess and epitaxial layer to improve transistor performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 3, 2017·4 cites·20 claims
- 1279US9728602B2Variable channel strain of nanowire transistors to improve drive currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 8, 2017·2 cites·20 claims
- 1378US11145762B2Multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 12, 2021·1 cites·20 claims
- 1473US9634132B2Semiconductor structures and methods for multi-level band gap energy of nanowire transistors to improve drive currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 25, 2017·3 cites·17 claims
- 1571US9716172B2Semiconductor device having multiple active area layers and its formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jul 25, 2017·2 cites·20 claims
- 1668US9236445B2Transistor having replacement gate and epitaxially grown replacement channel regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 12, 2016·2 cites·20 claims
- 1767US11393926B2Multi-gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 19, 2022·0 cites·20 claims
- 1867US10276664B2Semiconductor structures and methods for multi-dimension of nanowire diameter to improve drive currentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 30, 2019·2 cites·22 claims
- 1964US9837533B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 5, 2017·1 cites·20 claims
- 2064US9525031B2Epitaxial channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 20, 2016·1 cites·17 claims
- 2162US10734503B2Asymmetric semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 4, 2020·0 cites·20 claims
- 2257US10026826B2Method of forming semiconductor device having gate dielectric surrounding at least some of channel region and gate electrode surrounding at least some of gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 17, 2018·0 cites·20 claims
- 2351US9768297B2Process design to improve transistor variations and performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 19, 2017·0 cites·20 claims
- 2448US6557320B2Compact disk packing machineFiled 2001·Granted May 6, 2003·3 cites·1 claims
- 2547US9653545B2MOSFET structure with T-shaped epitaxial silicon channelTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 16, 2017·0 cites·20 claims
- 2646US6381922B1Transverse displacement mechanism for compact disc packaging machineFiled 2000·Granted May 7, 2002·3 cites·3 claims
- 2743US9000526B2MOSFET structure with T-shaped epitaxial silicon channelDHANYAKUMAR MAHAVEER SATHAIYA·Filed 2011·Granted Apr 7, 2015·0 cites·11 claims
- 2837US9660049B2Semiconductor transistor device with dopant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·0 cites·20 claims
- 2935US8993424B2Method for forming a semiconductor transistor device with optimized dopant profileLIU CHIA-WEN·Filed 2011·Granted Mar 31, 2015·0 cites·17 claims
- 3031US9161943B2Sustained release composition and manufacturing method thereofLU JUI-MEI·Filed 2007·Granted Oct 20, 2015·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →