Inventor · disambiguated record

Chee-Wee Liu

Also filed as: LIU CHEE WEE

106 granted patents·81 pending applications·719 citations·filing 1999–2025

99Inventor score

Technology areasH10P H10D H10W H10F H10N

Files withTAIWAN SEMICONDUCTOR MFG CO LTD124 UNIV NAT TAIWAN19 IND TECH RES INST13 POWERCHIP SEMICONDUCTOR MFG CORP5 NAT APPLIED RES LABORATORIES4

Top patents by PatentIndex Score

187 records

0197US7202512B2Construction of thin strain-relaxed SiGe layers and method for fabricating the sameIND TECH RES INST·Filed 2004·Granted Apr 10, 2007·417 cites·13 claims
0296US11749328B2Magnetoresistive memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 5, 2023·3 cites·20 claims
0396US9978868B2Negative capacitance field effect transistor with charged dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 22, 2018·35 cites·20 claims
0495US9490430B1Field effect transistors and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 8, 2016·16 cites·19 claims
0595US9240478B23D UTB transistor using 2D material channelsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 19, 2016·22 cites·20 claims
0694US11776998B2Gate-all-around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·2 cites·20 claims
0794US10332985B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 25, 2019·10 cites·20 claims
0894US9679893B2Semiconductor device and transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 13, 2017·24 cites·20 claims
0993US11233120B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·3 cites·20 claims
1093US9646994B2Semiconductor devices and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 9, 2017·8 cites·20 claims
1191US10665696B2Method for non-resist nanolithographyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·4 cites·20 claims
1291US9972702B2Method for non-resist nanolithographyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 15, 2018·7 cites·20 claims
1390US11515334B2Stacked vertically isolated MOSFET structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·2 cites·20 claims
1490US11043376B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 22, 2021·2 cites·20 claims
1590US10109477B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 23, 2018·5 cites·20 claims
1689US9559168B2Field effect transistors and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 31, 2017·7 cites·20 claims
1788US12451175B2Memory device and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 21, 2025·1 cites·20 claims
1888US11410714B2Magnetoresistive memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 9, 2022·6 cites·20 claims
1988US10269981B2Multi-channel field effect transistors using 2D-materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 23, 2019·5 cites·20 claims
2087US11282843B2Memory device, SRAM cell, and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·2 cites·20 claims
2186US12308368B2Method for non-resist nanolithographyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 20, 2025·0 cites·20 claims
2286US11791338B2Semiconductor device having doped work function metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·1 cites·20 claims
2385US2025366199A1Device with alternate complementary channels and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2484US11600703B2Germanium tin gate-all-around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·1 cites·20 claims
2584US10636651B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 28, 2020·2 cites·13 claims
2683US12315541B2Magnetoresistive memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
2783US11855190B2Methods for non-resist nanolithographyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
2883US11587846B2Semiconductor device and method of forming the sameMEDIATEK INC·Filed 2020·Granted Feb 21, 2023·1 cites·20 claims
2983US9660056B23D UTB transistor using 2D-material channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 23, 2017·3 cites·20 claims
3083US6963089B2Avalanche photo-detector with high saturation power and high gain-bandwidth productIND TECH RES INST·Filed 2003·Granted Nov 8, 2005·32 cites·19 claims
3183US2025366080A1Memory device with magnetic tunnel junctionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3282US12069965B2Method for manufacturing memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
3382US11411082B2Nanowire stack GAA device with selectable numbers of channel stripsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 9, 2022·2 cites·20 claims
3482US2025311312A1Source and drain epitaxial layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3581US2025366200A1Vertically stacked transistors and fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3681US2025259662A1Magnetoresistive memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3780US12211897B2Gate-all-around transistor with strained channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
3880US9847233B2Semiconductor device and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 19, 2017·3 cites·20 claims
3980US2025351464A1Multi-gate transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4080US2025351451A1Multi-gate transistors having deep inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4179US12249604B2Semiconductor device having doped work function metal layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 11, 2025·0 cites·20 claims
4279US10748935B2Stacked vertically isolated MOSFET structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·2 cites·20 claims
4379US2025072100A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4478US12446268B2Source and drain epitaxial layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
4578US12170227B2Stacked semiconductor device with nanostructure channelsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
4678US11031470B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·1 cites·20 claims
4778US6759694B1Semiconductor phototransistorIND TECH RES INST·Filed 2003·Granted Jul 6, 2004·27 cites·17 claims
4878US2025015140A1Germanium tin gate-all-around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4977US12154951B2Germanium tin gate-all-around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 26, 2024·0 cites·20 claims
5077US12100737B2Nanowire stack GAA device with selectable numbers of channel stripsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 24, 2024·0 cites·20 claims

Showing the top 50 of 187 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →