Inventor · disambiguated record
Chen-Chin Liu
Also filed as: LIU CHEN-CHIN
39 granted patents·5 pending applications·682 citations·filing 1999–2025
97Inventor score
Top patents by PatentIndex Score
44 records- 0198US6610586B1Method for fabricating nitride read-only memoryMACRONIX INT CO LTD·Filed 2002·Granted Aug 26, 2003·146 cites·11 claims
- 0298US6514831B1Nitride read only memory cellMACRONIX INT CO LTD·Filed 2001·Granted Feb 4, 2003·157 cites·9 claims
- 0394US6468864B1Method of fabricating silicon nitride read only memoryMACRONIX INT CO LTD·Filed 2001·Granted Oct 22, 2002·132 cites·9 claims
- 0491US6617204B2Method of forming the protective film to prevent nitride read only memory cell chargingMACRONIX INT CO LTD·Filed 2001·Granted Sep 9, 2003·137 cites·8 claims
- 0588US9590059B2Interdigitated capacitor to integrate with flash memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 7, 2017·6 cites·20 claims
- 0685US9679909B2Method for manufacturing a finger trench capacitor with a split-gate flash memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 13, 2017·5 cites·20 claims
- 0784US9847399B1Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 19, 2017·4 cites·20 claims
- 0883US9570539B2Integration techniques for MIM or MIP capacitors with flash memory and/or high-κ metal gate CMOS technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·4 cites·20 claims
- 0982US9831134B1Method of manufacturing a semiconductor device having deep wellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·2 cites·20 claims
- 1079US10741569B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 11, 2020·2 cites·20 claims
- 1178US7183608B2Memory array including isolation between memory cell and dummy cell portionsMACRONIX INT CO LTD·Filed 2005·Granted Feb 27, 2007·6 cites·22 claims
- 1276US6930928B2Method of over-erase prevention in a non-volatile memory device and related structureMACRONIX INT CO LTD·Filed 2003·Granted Aug 16, 2005·23 cites·14 claims
- 1376US2025331178A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1471US11195834B2Semiconductor device having deep wellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 7, 2021·0 cites·20 claims
- 1568US12376298B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 29, 2025·0 cites·20 claims
- 1668US7286396B2Bit line selection transistor layout structureMACRONIX INT CO LTD·Filed 2005·Granted Oct 23, 2007·4 cites·24 claims
- 1765US12167594B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 10, 2024·0 cites·20 claims
- 1863US10644000B2Semiconductor device having deep wellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 5, 2020·0 cites·20 claims
- 1962US11430799B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 30, 2022·0 cites·20 claims
- 2061US11895836B2Anti-dishing structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 6, 2024·0 cites·20 claims
- 2161US6501123B2High gate coupling non-volatile memory structureMACRONIX INT CO LTD·Filed 2001·Granted Dec 31, 2002·9 cites·11 claims
- 2260US10134644B2Method of manufacturing a semiconductor device having deep wellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·0 cites·20 claims
- 2360US2024147718A1Anti-dishing structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2459US7403430B2Erase operation for use in non-volatile memoryMACRONIX INT CO LTD·Filed 2006·Granted Jul 22, 2008·4 cites·17 claims
- 2558US11088040B2Cell-like floating-gate test structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 10, 2021·0 cites·20 claims
- 2658US11031294B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 8, 2021·0 cites·20 claims
- 2755US11264292B2Cell-like floating-gate test structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 1, 2022·0 cites·20 claims
- 2855US10804281B2Anti-dishing structure for embedded memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 13, 2020·0 cites·20 claims
- 2955US10535574B2Cell-like floating-gate test structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·0 cites·20 claims
- 3053US10049939B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 14, 2018·0 cites·21 claims
- 3153US6509231B1Nitride ready only memory cell with two top oxide layers and the method for manufacturing the sameMACRONIX INT CO LTD·Filed 2002·Granted Jan 21, 2003·4 cites·12 claims
- 3251US6909131B2Word line strap layout structureMACRONIX INT CO LTD·Filed 2003·Granted Jun 21, 2005·4 cites·19 claims
- 3351US6576514B2Method of forming a three-dimensional polysilicon layer on a semiconductor waferMACRONIX INT CO LTD·Filed 2001·Granted Jun 10, 2003·5 cites·14 claims
- 3448US6784053B2Method for preventing bit line to bit line leakage in memory cellMACRONIX INT CO LTD·Filed 2001·Granted Aug 31, 2004·5 cites·8 claims
- 3547US7132302B2Method of increasing cell retention capacity of silicon nitride read-only-memory cellMACRONIX INT CO LTD·Filed 2004·Granted Nov 7, 2006·3 cites·16 claims
- 3647US6191000B1Shallow trench isolation method used in a semiconductor waferMACRONIX INT CO LTD·Filed 1999·Granted Feb 20, 2001·15 cites·7 claims
- 3746US8354335B2Apparatus and associated method for making a floating gate cell with increased overlay between the control gate and floating gateMACRONIX INT CO LTD·Filed 2010·Granted Jan 15, 2013·0 cites·19 claims
- 3846US7879708B2Apparatus and associated method for making a floating gate cell with increased overlay between the control gate and floating gateMACRONIX INT CO LTD·Filed 2006·Granted Feb 1, 2011·0 cites·20 claims
- 3944US7064032B2Method for forming non-volatile memory cell with low-temperature-formed dielectric between word and bit lines, and non-volatile memory array including such memory cellsMACRONIX INT CO LTD·Filed 2003·Granted Jun 20, 2006·3 cites·13 claims
- 4041US6869843B2Non-volatile memory cell with dielectric spacers along sidewalls of a component stack, and method for forming sameMACRONIX INT CO LTD·Filed 2003·Granted Mar 22, 2005·2 cites·16 claims
- 4137US8017480B2Apparatus and associated method for making a floating gate cell in a virtual ground arrayMACRONIX INT CO LTD·Filed 2006·Granted Sep 13, 2011·0 cites·8 claims
- 4237US2005142763A1Non-volatile memory cell with dielectric spacers along sidewalls of a component stack, and method for forming sameFiled 2005·Application pending·0 cites
- 4336US2003129794A1Nitride ready only memory cell with two top oxide layers and the method for manufacturing the sameFiled 2002·Application pending·0 cites
- 4431US2003040152A1Method of fabricating a NROM cell to prevent chargingFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →