Inventor · disambiguated record
Ching-Hsiung Lo
Also filed as: LO CHING-HSIUNG
13 granted patents·504 citations·filing 2011–2018
92Inventor score
Top patents by PatentIndex Score
13 records- 0197US8735993B2FinFET body contact and method of making sameLO CHING-HSIUNG·Filed 2012·Granted May 27, 2014·412 cites·19 claims
- 0294US8928093B2FinFET body contact and method of making sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jan 6, 2015·14 cites·20 claims
- 0394US8779517B2FinFET-based ESD devices and methods for forming the sameLIN WUN-JIE·Filed 2012·Granted Jul 15, 2014·24 cites·20 claims
- 0492US9397098B2FinFET-based ESD devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 19, 2016·13 cites·20 claims
- 0592US9312384B2FinFET body contact and method of making sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 12, 2016·10 cites·20 claims
- 0691US9190519B2FinFET-based ESD devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Nov 17, 2015·8 cites·20 claims
- 0790US9559008B2FinFET-based ESD devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 31, 2017·5 cites·20 claims
- 0890US8570698B2ESD protection for FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Oct 29, 2013·11 cites·20 claims
- 0982US10026727B2FinFET-based ESD devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 17, 2018·2 cites·20 claims
- 1077US8809905B2Vertical BJT and SCR for ESDLIN WUN-JIE·Filed 2011·Granted Aug 19, 2014·5 cites·20 claims
- 1162US10546850B2FinFET-based ESD devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 28, 2020·0 cites·20 claims
- 1259US10163894B2FinFET-based ESD devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·0 cites·20 claims
- 1355US9893052B2FinFET-based ESD devices and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →