Inventor · disambiguated record
Chun-Yuan Lo
Also filed as: LO CHUN-YUAN
19 granted patents·1 pending application·15 citations·filing 2006–2023
91Inventor score
Top patents by PatentIndex Score
20 records- 0190US9653173B1Memory cell with different program and read paths for achieving high enduranceEMEMORY TECHNOLOGY INC·Filed 2016·Granted May 16, 2017·4 cites·25 claims
- 0288US11980026B2Magnetoresistive random access memory for physically unclonable function technology and associated random code generating methodEMEMORY TECHNOLOGY INC·Filed 2022·Granted May 7, 2024·1 cites·22 claims
- 0386US11164880B2Multi-time programming non-volatile memoryEMEMORY TECHNOLOGY INC·Filed 2019·Granted Nov 2, 2021·3 cites·3 claims
- 0483US11398259B2Memory cell array of multi-time programmable non-volatile memoryEMEMORY TECHNOLOGY INC·Filed 2021·Granted Jul 26, 2022·1 cites·9 claims
- 0569US9953685B2Semiconductor device and method for fabricating the sameEMEMORY TECHNOLOGY INC·Filed 2014·Granted Apr 24, 2018·1 cites·12 claims
- 0665US12294367B2Level shifter with voltage stress durability and method for driving the sameEMEMORY TECHNOLOGY INC·Filed 2023·Granted May 6, 2025·0 cites·17 claims
- 0764US11929434B2High voltage switch deviceEMEMORY TECHNOLOGY INC·Filed 2022·Granted Mar 12, 2024·0 cites·5 claims
- 0863US12255645B2Programming method of non-volatile memory cellEMEMORY TECHNOLOGY INC·Filed 2023·Granted Mar 18, 2025·0 cites·13 claims
- 0963US11335805B2High voltage switch deviceEMEMORY TECHNOLOGY INC·Filed 2020·Granted May 17, 2022·0 cites·15 claims
- 1062US9792993B2Memory cell with high endurance for multiple program operationsEMEMORY TECHNOLOGY INC·Filed 2017·Granted Oct 17, 2017·0 cites·23 claims
- 1159US10181342B2Method for improving a program speed and an erase speed of a memoryEMEMORY TECHNOLOGY INC·Filed 2017·Granted Jan 15, 2019·0 cites·24 claims
- 1257US8526240B2Flash memory and memory cell programming method thereofLO CHUN-YUAN·Filed 2011·Granted Sep 3, 2013·2 cites·10 claims
- 1355US8927370B2Method for fabricating memoryLO CHUN-YUAN·Filed 2006·Granted Jan 6, 2015·1 cites·5 claims
- 1455US7924591B2Memory device with shielding plugs adjacent to a dummy word line thereofMACRONIX INT CO LTD·Filed 2009·Granted Apr 12, 2011·2 cites·17 claims
- 1553US9196367B2Non-volatile memory apparatus and erasing method thereofEMEMORY TECHNOLOGY INC·Filed 2014·Granted Nov 24, 2015·0 cites·16 claims
- 1652US9424939B2Non-volatile memory apparatus and erasing method thereofEMEMORY TECHNOLOGY INC·Filed 2015·Granted Aug 23, 2016·0 cites·4 claims
- 1744US8451641B2Memory array no common source region and method of fabricating the sameLO CHUN-YUAN·Filed 2012·Granted May 28, 2013·0 cites·12 claims
- 1842US8243489B2Memory device no common source region and method of fabricating the sameLO CHUN-YUAN·Filed 2011·Granted Aug 14, 2012·0 cites·8 claims
- 1934US9484094B2Control method of resistive random-access memoryEMEMORY TECHNOLOGY INC·Filed 2015·Granted Nov 1, 2016·0 cites·12 claims
- 2032US2016148686A1Memory cell array of resistive random-access memoriesEMEMORY TECHNOLOGY INC·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →