Inventor · disambiguated record
Chun Hui Low
Also filed as: LOW CHUN HUI
11 granted patents·357 citations·filing 1999–2009
91Inventor score
Top patents by PatentIndex Score
11 records- 0192US6228727B1Method to form shallow trench isolations with rounded corners and reduced trench oxide recessCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted May 8, 2001·142 cites·18 claims
- 0288US6350661B2Silicon nitride capped shallow trench isolation method for fabricating sub-micron devices with borderless contactsCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Feb 26, 2002·49 cites·5 claims
- 0384US6265302B1Partially recessed shallow trench isolation method for fabricating borderless contactsCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Jul 24, 2001·77 cites·17 claims
- 0474US6271133B1Optimized Co/Ti-salicide scheme for shallow junction deep sub-micron device fabricationCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Aug 7, 2001·36 cites·6 claims
- 0573US8354347B2Method of forming high-k dielectric stop layer for contact hole openingGLOBALFOUNDRIES SG PTE LTD·Filed 2007·Granted Jan 15, 2013·6 cites·29 claims
- 0673US7045455B2Via electromigration improvement by changing the via bottom geometric profileCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted May 16, 2006·17 cites·14 claims
- 0762US8293545B2Critical dimension for trench and viasCONG HAI·Filed 2007·Granted Oct 23, 2012·3 cites·22 claims
- 0859US7781895B2Via electromigration improvement by changing the via bottom geometric profileCHARTERED SEMICONDUCTOR MFG·Filed 2009·Granted Aug 24, 2010·1 cites·12 claims
- 0958US7352064B2Multiple layer resist scheme implementing etch recipe particular to each layerIBM·Filed 2004·Granted Apr 1, 2008·6 cites·7 claims
- 1058US6297126B1Silicon nitride capped shallow trench isolation method for fabricating sub-micron devices with borderless contactsCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Oct 2, 2001·20 cites·11 claims
- 1148US7691739B2Via electromigration improvement by changing the via bottom geometric profileCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Apr 6, 2010·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →