Inventor · disambiguated record

Chun-Chieh Lu

Also filed as: LU CHUN-CHIEH

82 granted patents·36 pending applications·100 citations·filing 2009–2025

98Inventor score

Technology areasH10P H10D H10W H10B B32B

Files withTAIWAN SEMICONDUCTOR MFG CO LTD105 INVENTEC PUDONG TECH CORP5 LU CHUN-CHIEH2 MIRLE AUTOMATION CORP2 NAT UNIV TSING HUA1

Top patents by PatentIndex Score

118 records

0198US11765892B2Three-dimensional memory device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 19, 2023·3 cites·20 claims
0298US11729986B2Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 15, 2023·6 cites·20 claims
0398US11515332B2Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·8 cites·20 claims
0497US11869766B2Seed layer for ferroelectric memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 9, 2024·2 cites·20 claims
0597US11839080B23D memory with graphite conductive stripsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 5, 2023·4 cites·20 claims
0697US11527552B2Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·5 cites·20 claims
0797US10276697B1Negative capacitance FET with improved reliability performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·19 cites·20 claims
0896US12046665B2Forming semiconductor structures with two-dimensional materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 23, 2024·2 cites·20 claims
0996US11824106B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 21, 2023·2 cites·20 claims
1094US11600720B2Forming semiconductor structures with two-dimensional materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 7, 2023·2 cites·20 claims
1192US11991887B2Three-dimensional memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 21, 2024·2 cites·20 claims
1292US11302529B2Seed layer for ferroelectric memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·2 cites·20 claims
1392US11004965B2Forming semiconductor structures with two-dimensional materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·5 cites·20 claims
1491US11239354B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 1, 2022·2 cites·20 claims
1590US11404444B2Three-dimensional memory device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·2 cites·20 claims
1689US10818562B2Semiconductor structure and testing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 27, 2020·4 cites·20 claims
1789US10741678B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 11, 2020·4 cites·20 claims
1889US10490631B2Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 26, 2019·3 cites·20 claims
1988US2025318198A1Thin film transistor including a compositionally-graded gate dielectric and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2087US12369362B2Forming semiconductor structures with two-dimensional materialsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
2187US10825899B2Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 3, 2020·2 cites·20 claims
2286US12261043B2Seed layer for ferroelectric memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 25, 2025·0 cites·20 claims
2386US10872955B2Semiconductor device and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·2 cites·20 claims
2485US12166113B2Semiconductor device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
2585US11302695B2Method for forming integrated semiconductor device with 2D material layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·1 cites·20 claims
2684US10727230B2Integrated semiconductor device with 2D material layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·2 cites·20 claims
2784US10193090B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 29, 2019·3 cites·20 claims
2884US2024363716A1Thin film transistor including a compositionally-graded gate dielectric and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2984US2025063771A1Method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3083US12369354B2Thin film transistor including a compositionally- graded gate dielectric and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
3183US2025366149A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3281US10784362B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 22, 2020·2 cites·20 claims
3380US12224351B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
3480US10847736B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 24, 2020·2 cites·20 claims
3580US2025191912A1Seed layer for ferroelectric memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3679US2024379440A1Transistors with channels formed of low-dimensional materials and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3779US2024379832A1Cmos fabrication methods for back-gate transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3878US12302557B2Three-dimensional memory device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
3978US12193241B2Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
4078US11854895B2Transistors with channels formed of low-dimensional materials and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
4178US10734472B2Negative capacitance FET with improved reliability performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·1 cites·20 claims
4277US12041776B23D memory with graphite conductive stripsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
4377US2024105515A1Transistors with channels formed of low-dimensional materials and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4476US11935890B2Method for forming integrated semiconductor device with 2D material layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
4576US2025294772A1Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4676US2025351466A1Oxide semiconductor ferroelectric field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4776US2025056809A1Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4876US2024381654A1Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4975US12113115B2Thin film transistor including a compositionally-graded gate dielectric and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 8, 2024·0 cites·20 claims
5075US11950427B2Ferroelectric memory device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims

Showing the top 50 of 118 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →