Inventor · disambiguated record
Chi-Pin Lu
Also filed as: LU CHI-PIN
16 granted patents·6 pending applications·18 citations·filing 2005–2025
88Inventor score
Top patents by PatentIndex Score
22 records- 0186US2025365962A1Memory device and method for forming the sameMACRONIX INT CO LTD·Filed 2025·Application pending·0 cites
- 0273US12408342B2Memory device with multi-layered charge storage stackMACRONIX INT CO LTD·Filed 2022·Granted Sep 2, 2025·0 cites·10 claims
- 0373US7531411B2Apparatus and method for a non-volatile memory structure comprising a multi-layer silicon-rich, silicon nitride trapping layerMACRONIX INT CO LTD·Filed 2005·Granted May 12, 2009·5 cites·18 claims
- 0472US10181475B2Three-dimensional non-volatile memory and manufacturing method thereofMACRONIX INT CO LTD·Filed 2016·Granted Jan 15, 2019·2 cites·16 claims
- 0569US8581322B2Nonvolatile memory device and method for making the sameLU CHI-PIN·Filed 2011·Granted Nov 12, 2013·4 cites·11 claims
- 0665US7927660B2Method of manufacturing nano-crystalline silicon dot layerMACRONIX INT CO LTD·Filed 2006·Granted Apr 19, 2011·2 cites·16 claims
- 0765US7749838B2Fabricating method of non-volatile memory cellMACRONIX INT CO LTD·Filed 2007·Granted Jul 6, 2010·2 cites·10 claims
- 0862US7521321B2Method of fabricating a non-volatile semiconductor memory deviceMACRONIX INT CO LTD·Filed 2007·Granted Apr 21, 2009·2 cites·17 claims
- 0960US7544616B2Methods of forming nitride read only memory and word lines thereofMACRONIX INT CO LTD·Filed 2007·Granted Jun 9, 2009·1 cites·14 claims
- 1053US11895841B2Memory structure and manufacturing method for the sameMACRONIX INT CO LTD·Filed 2021·Granted Feb 6, 2024·0 cites·11 claims
- 1148US7863132B2Method for fabricating a charge trapping memory deviceMACRONIX INT CO LTD·Filed 2006·Granted Jan 4, 2011·0 cites·26 claims
- 1248US7834382B2Nitride read-only memory cell and method of manufacturing the sameMACRONIX INT CO LTD·Filed 2007·Granted Nov 16, 2010·0 cites·12 claims
- 1347US8183618B2Method for fabricating a charge trapping memory deviceSHIH YEN-HAO·Filed 2010·Granted May 22, 2012·0 cites·7 claims
- 1446US8373218B2Nitride read-only memory cell and method of manufacturing the sameMACRONIX INT CO LTD·Filed 2010·Granted Feb 12, 2013·0 cites·11 claims
- 1546US7875926B2Non-volatile memory cellMACRONIX INT CO LTD·Filed 2010·Granted Jan 25, 2011·0 cites·27 claims
- 1644US2009130854A1Patterning structure and method for semiconductor devicesMACRONIX INT CO LTD·Filed 2007·Application pending·0 cites
- 1742US10714494B23D memory device with silicon nitride and buffer oxide layers and method of manufacturing the sameMACRONIX INT CO LTD·Filed 2017·Granted Jul 14, 2020·0 cites·19 claims
- 1840US2015171181A1Ono structure with separated electron trappingMACRONIX INT CO LTD·Filed 2013·Application pending·0 cites
- 1940US2014209990A1Semiconductor device and method of manufacturing thereofMACRONIX INT CO LTD·Filed 2013·Application pending·0 cites
- 2039US2007212833A1Methods for making a nonvolatile memory device comprising a shunt silicon layerMACRONIX INT CO LTD·Filed 2006·Application pending·0 cites
- 2137US10056395B2Method of improving localized wafer shape changesMACRONIX INT CO LTD·Filed 2016·Granted Aug 21, 2018·0 cites·9 claims
- 2236US2010059809A1Non-volatile memory and method of fabricating the sameMACRONIX INT CO LTD·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →