Inventor · disambiguated record
Chang-Bong Oh
Also filed as: OH CHANG HYUN · OH CHANG-BONG
13 granted patents·2 pending applications·364 citations·filing 1998–2011
93Inventor score
Top patents by PatentIndex Score
15 records- 0197US7569456B2MOS transistor with elevated source and drain structures and method of fabrication thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Aug 4, 2009·109 cites·26 claims
- 0295US6417549B1Static random access memory device and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Jul 9, 2002·115 cites·25 claims
- 0387US7323420B2Method for manufacturing multi-thickness gate dielectric layer of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 29, 2008·11 cites·9 claims
- 0485US7348636B2CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereofSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 25, 2008·11 cites·5 claims
- 0584US6855641B2CMOS transistor having different PMOS and NMOS gate electrode structures and method of fabrication thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 15, 2005·31 cites·21 claims
- 0681US6900503B2SRAM formed on SOI substrateSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted May 31, 2005·28 cites·25 claims
- 0780US8482077B2Semiconductor devices and methods for fabricating the sameLEE JONGHO·Filed 2011·Granted Jul 9, 2013·6 cites·25 claims
- 0879US7227224B2MOS transistor with elevated source and drain structures and method of fabrication thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jun 5, 2007·21 cites·21 claims
- 0970US7179750B2Method for manufacturing multi-thickness gate dielectric layer of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 20, 2007·11 cites·11 claims
- 1064US7052965B2Methods of fabricating MOS field effect transistors with pocket regions using implant blocking patternsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 30, 2006·9 cites·15 claims
- 1149US7217625B2Method of fabricating a semiconductor device having a shallow source/drain regionSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 15, 2007·2 cites·20 claims
- 1246US6074907AMethod of manufacturing capacitor for analog functionSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jun 13, 2000·10 cites·9 claims
- 1335US7838966B2Semiconductor devices including resistor elements comprising a bridge and base elements and related methodsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 23, 2010·0 cites·16 claims
- 1435US2004182415A1Cleaning method of apparatus for manufacturing semiconductor deviceFiled 2004·Application pending·0 cites
- 1535US2004185608A1Methods of forming integrated circuit devices using buffer layers covering conductive/insulating interfacesFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →