Inventor · disambiguated record
Chia-Ming Pan
Also filed as: PAN CHIA-MING
20 granted patents·5 pending applications·12 citations·filing 2015–2025
91Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD25
Top patents by PatentIndex Score
25 records- 0195US11257963B1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·4 cites·20 claims
- 0293US11769837B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 26, 2023·2 cites·20 claims
- 0391US2025365949A1Semiconductor device having non-continuous wall structure surrounding stacked gate structure including conductive layer disposed between segmented portions of the wall structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0487US12464714B2Semiconductor device having non-continuous wall structure surrounding a stacked gate structure including a conductive layer disposed between segmented portions of the wall structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 0584US11594645B1Transistor and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 28, 2023·1 cites·14 claims
- 0684US2025098227A1Flash memory device including a buried floating gate and a buried erase gate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0783US9728543B1Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 8, 2017·4 cites·20 claims
- 0883US2025275190A1Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0982US12317545B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 1081US11183572B2Flash memory device including a buried floating gate and a buried erase gate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 23, 2021·1 cites·20 claims
- 1180US12199159B2Flash memory device including a buried floating gate and a buried erase gate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 1277US12249657B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 11, 2025·0 cites·20 claims
- 1376US12113135B2Transistor and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 1476US11855201B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 1576US11804529B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 31, 2023·0 cites·20 claims
- 1676US2024097027A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1776US2024387749A1Transistor and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1873US11728399B2Flash memory device including a buried floating gate and a buried erase gate and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·0 cites·20 claims
- 1971US11925017B2Semiconductor device having a wall structure surrounding a stacked gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 5, 2024·0 cites·20 claims
- 2070US11282931B2Memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 22, 2022·0 cites·20 claims
- 2164US11462639B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 4, 2022·0 cites·20 claims
- 2260US12051755B2Transistor and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 30, 2024·0 cites·20 claims
- 2357US10535670B2Non-volatile memory having an erase gate formed between two floating gates with two word lines formed on other sides and a method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 14, 2020·0 cites·20 claims
- 2454US10103235B2Gate structure with multiple spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 16, 2018·0 cites·20 claims
- 2549US9653302B2Gate structure with multiple spacer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 16, 2017·0 cites·20 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →