Inventor · disambiguated record
Chia-Hao Pao
Also filed as: Pao Chia-Hao
45 granted patents·18 pending applications·43 citations·filing 2015–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD63
Top patents by PatentIndex Score
63 records- 0197US11996484B2Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·4 cites·20 claims
- 0297US11342338B2Memory device with improved margin and performance and methods of formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·4 cites·20 claims
- 0397US9620509B1Static random access memory device with vertical FET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 11, 2017·30 cites·20 claims
- 0493US12294030B2Nano-sheet-based complementary metal-oxide-semiconductor devices with asymmetric inner spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 6, 2025·1 cites·20 claims
- 0591US2025358996A1Macro and sram bit cell cooptimizatoin for performance (long/shortwordline combo sram)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0688US12499933B2SRAM structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 16, 2025·0 cites·20 claims
- 0785US12477811B2High-k gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 0885US11605638B2Transistors with multiple threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·1 cites·20 claims
- 0985US11393831B2Optimized static random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·1 cites·20 claims
- 1084US12426226B2Macro and SRAM bit cell cooptimizatoin for performance (long/shortwordline combo SRAM)TAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 1184US2025301783A1Gate Structures Having Neutral Zones to Minimize Metal Gate Boundary Effects and Methods of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1284US2024395896A1High-k gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1383US12336281B2Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1480US12080604B2Gate-all-around semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 3, 2024·0 cites·20 claims
- 1580US2025351325A1Memory devices with differently sized active regions in periphery circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1679US12016169B2Optimized static random access memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 18, 2024·0 cites·18 claims
- 1779US2024292592A1Connection between source/drain and gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1878US11862706B2High-K gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·0 cites·20 claims
- 1978US2024379444A1Gate-all-around semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2078US2024260249A1Memory Device with Improved Margin and Performance and Methods of Formation ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2176US12374391B2Static random access memory with write assist adjustmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 29, 2025·0 cites·20 claims
- 2276US11980016B2Connection between source/drain and gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 7, 2024·0 cites·20 claims
- 2376US2025212380A1Device and method for tuning threshold voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2475US12027202B2SRAM structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 2575US11937416B2Memory device with improved margin and performance and methods of formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 19, 2024·0 cites·20 claims
- 2675US11908866B2Gate structures having neutral zones to minimize metal gate boundary effects and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·20 claims
- 2775US11024370B2Static random access memory with write assist adjustmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 1, 2021·2 cites·20 claims
- 2875US2024379801A1Tuning gate lengths in multi-gate field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2974US2025275112A1Shared pick-up regions for memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3073US12063768B2Transistors with multiple threshold voltagesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 13, 2024·0 cites·20 claims
- 3173US2022367483A1Semiconductor device having an offset source/drain feature and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3272US2024371696A1Multi-Gate Field-Effect Transistors and Methods of Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3371US11349009B2High-k gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·0 cites·20 claims
- 3471US11056181B2Strap cell design for static random access memory (SRAM) arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 6, 2021·0 cites·20 claims
- 3571US2025126769A1Memory devices with differently sized active regions in periphery circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3670US12349330B2Shared pick-up regions for memory devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 1, 2025·0 cites·20 claims
- 3770US11605423B2Static random access memory with write assist adjustmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 14, 2023·0 cites·20 claims
- 3870US11450673B2Connection between source/drain and gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·0 cites·19 claims
- 3970US10854279B2Strap cell design for static random access memory (SRAM) arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 1, 2020·0 cites·20 claims
- 4069US11791214B2Gate-all-around semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·20 claims
- 4169US2025185228A1Memory Active Region Layout for Improving Memory PerformanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4269US2024371437A1Memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4368US12250803B2Device and method for tuning threshold voltageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 11, 2025·0 cites·20 claims
- 4468US12249636B2Tuning gate lengths in multi-gate field effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 11, 2025·0 cites·20 claims
- 4567US12063766B2Vertical static random access memory and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 13, 2024·0 cites·20 claims
- 4667US11475942B2SRAM structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 18, 2022·0 cites·20 claims
- 4766US12080342B2Static random access memory (SRAM) with a pre- charge assist circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
- 4866US11869581B2Compensation word line driverTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 9, 2024·0 cites·20 claims
- 4966US10714168B2Strap cell design for static random access memory (SRAM) arrayTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 14, 2020·0 cites·20 claims
- 5065US12087633B2Multi-gate field-effect transistors and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 10, 2024·0 cites·20 claims
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →