Inventor · disambiguated record
Changyok Park
Also filed as: PARK CHANGYOK
12 granted patents·15 pending applications·33 citations·filing 2007–2024
86Inventor score
Files withINTEL CORP15BROADCOM CORP7ATI TECHNOLOGIES ULC2PARK CHANGYOK2AVAGO TECHNOLOGIES GENERAL IP1
Top patents by PatentIndex Score
27 records- 0191US9209202B2Enabling bulk FINFET-based devices for FINFET technology with dielectric isolationBROADCOM CORP·Filed 2014·Granted Dec 8, 2015·14 cites·12 claims
- 0286US9941271B2Fin-shaped field effect transistor and capacitor structuresBROADCOM CORP·Filed 2013·Granted Apr 10, 2018·8 cites·20 claims
- 0380US9165936B2Dummy end-gate based anti-fuse device for finFET technologiesBROADCOM CORP·Filed 2014·Granted Oct 20, 2015·5 cites·20 claims
- 0478US11923150B2Decoupling capacitors based on dummy through-silicon-viasINTEL CORP·Filed 2020·Granted Mar 5, 2024·1 cites·17 claims
- 0573US10181454B2Dummy TSV to improve process uniformity and heat dissipationPARK CHANGYOK·Filed 2010·Granted Jan 15, 2019·5 cites·19 claims
- 0670US2024128023A1Decoupling capacitors based on dummy through-silicon-viasINTEL CORP·Filed 2023·Application pending·0 cites
- 0759US2025336800A1Decoupling capacitors using backside connectionsINTEL CORP·Filed 2024·Application pending·0 cites
- 0859US2025372482A1Through semiconductor via as a well tap structureINTEL CORP·Filed 2024·Application pending·0 cites
- 0958US2025372384A1Self-aligned gate cutINTEL CORP·Filed 2024·Application pending·0 cites
- 1058US2025372505A1Planar and 3d capacitors in interconnect regionINTEL CORP·Filed 2024·Application pending·0 cites
- 1157US2025201670A1Capacitors integrated with via structuresINTEL CORP·Filed 2023·Application pending·0 cites
- 1254US12356552B2Capacitor formed with coupled diesINTEL CORP·Filed 2021·Granted Jul 8, 2025·0 cites·19 claims
- 1354US10396070B2Fin-shaped field effect transistor and capacitor structuresAVAGO TECHNOLOGIES GENERAL IP·Filed 2018·Granted Aug 27, 2019·0 cites·20 claims
- 1453US12237388B2Transistor arrangements with stacked trench contacts and gate strapsINTEL CORP·Filed 2020·Granted Feb 25, 2025·0 cites·20 claims
- 1552US11222869B2Dummy TSV to improve process uniformity and heat dissipationATI TECHNOLOGIES ULC·Filed 2019·Granted Jan 11, 2022·0 cites·20 claims
- 1652US9337188B2Metal-insulator-metal capacitor structureBROADCOM CORP·Filed 2013·Granted May 10, 2016·0 cites·21 claims
- 1751US2023207465A1Integrated circuit structure with buried power railINTEL CORP·Filed 2021·Application pending·0 cites
- 1850US12094822B2Buried power rails with self-aligned vias to trench contactsINTEL CORP·Filed 2020·Granted Sep 17, 2024·0 cites·19 claims
- 1949US2023197767A1Hybrid bonded capacitorsINTEL CORP·Filed 2021·Application pending·0 cites
- 2049US2022416017A1Buried power rail with a silicide layer for well biasingINTEL CORP·Filed 2021·Application pending·0 cites
- 2148US12402331B2Decoupling capacitors based on dummy through-silicon-via platesINTEL CORP·Filed 2021·Granted Aug 26, 2025·0 cites·21 claims
- 2248US2024429235A1Complementary field-effect transistor with forked semiconductor structureINTEL CORP·Filed 2023·Application pending·0 cites
- 2345US2016233212A1Metal-insulator-metal capacitor structureBROADCOM CORP·Filed 2016·Application pending·0 cites
- 2444US2016064417A1Bulk and dielectric-isolated finfet-based integrated circuitBROADCOM CORP·Filed 2015·Application pending·0 cites
- 2539US2009160531A1Multi-threshold voltage-biased circuitsATI TECHNOLOGIES ULC·Filed 2007·Application pending·0 cites
- 2635US2015194433A1Gate substantial contact based one-time programmable deviceBROADCOM CORP·Filed 2014·Application pending·0 cites
- 2734US2013155636A1Dummy through-silicon via capacitorPARK CHANGYOK·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →