Inventor · disambiguated record
Charles Walter Pearce
Also filed as: PEARCE CHARLES · PEARCE CHARLES W · PEARCE CHARLES WALTER
28 granted patents·2 pending applications·680 citations·filing 1977–2010
97Inventor score
Files withAGERE SYSTEMS INC12AGERE SYST GUARDIAN CORP5BELL TELEPHONE LABOR INC2KOCON CHRISTOPHER BOGUSLAW2WESTERN ELECTRIC CO2
Top patents by PatentIndex Score
30 records- 0195US7638380B2Method for manufacturing a laterally diffused metal oxide semiconductor deviceAGERE SYSTEMS INC·Filed 2001·Granted Dec 29, 2009·100 cites·20 claims
- 0290US4347431ADiffusion furnaceBELL TELEPHONE LABOR INC·Filed 1980·Granted Aug 31, 1982·40 cites·6 claims
- 0389US4131487AGettering semiconductor wafers with a high energy laser beamWESTERN ELECTRIC CO·Filed 1977·Granted Dec 26, 1978·61 cites·2 claims
- 0487US8288820B2High voltage power integrated circuitKOCON CHRISTOPHER BOGUSLAW·Filed 2010·Granted Oct 16, 2012·10 cites·19 claims
- 0587US6503841B1Oxide etchAGERE SYSTEMS INC·Filed 2000·Granted Jan 7, 2003·75 cites·21 claims
- 0684US6245692B1Method to selectively heat semiconductor wafersAGERE SYST GUARDIAN CORP·Filed 1999·Granted Jun 12, 2001·95 cites·20 claims
- 0781US6387772B1Method for forming trench capacitors in SOI substratesAGERE SYST GUARDIAN CORP·Filed 2000·Granted May 14, 2002·25 cites·11 claims
- 0880US4134785AReal-time analysis and control of melt-chemistry in crystal growing operationsWESTERN ELECTRIC CO·Filed 1977·Granted Jan 16, 1979·29 cites·8 claims
- 0979US5336371ASemiconductor wafer cleaning and rinsing techniques using re-ionized water and tank overflowAT & T BELL LAB·Filed 1993·Granted Aug 9, 1994·74 cites·12 claims
- 1077US4216489AMOS Dynamic memory in a diffusion current limited semiconductor structureBELL TELEPHONE LABOR INC·Filed 1979·Granted Aug 5, 1980·26 cites·10 claims
- 1174US8294210B2High voltage channel diodeKOCON CHRISTOPHER BOGUSLAW·Filed 2010·Granted Oct 23, 2012·4 cites·10 claims
- 1269US6552381B2Trench capacitors in SOI substratesAGERE SYSTEMS INC·Filed 2002·Granted Apr 22, 2003·12 cites·15 claims
- 1359US6482694B2Semiconductor device structure including a tantalum pentoxide layer sandwiched between silicon nitride layersAGERE SYSTEMS INC·Filed 2001·Granted Nov 19, 2002·5 cites·11 claims
- 1457US6294807B1Semiconductor device structure including a tantalum pentoxide layer sandwiched between silicon nitride layersAGERE SYST GUARDIAN CORP·Filed 1999·Granted Sep 25, 2001·17 cites·5 claims
- 1555US5930650AMethod of etching silicon materialsFiled 1997·Granted Jul 27, 1999·22 cites·25 claims
- 1654US6762457B2LDMOS device having a tapered oxideAGERE SYSTEMS INC·Filed 2002·Granted Jul 13, 2004·3 cites·8 claims
- 1753US7927940B2Method of manufacturing a laterally diffused metal oxide semiconductor deviceAGERE SYSTEMS INC·Filed 2009·Granted Apr 19, 2011·0 cites·15 claims
- 1853US6361614B1Dark spin rinse/dryAGERE SYST GUARDIAN CORP·Filed 2000·Granted Mar 26, 2002·6 cites·12 claims
- 1952US6472279B1Method of manufacturing a channel stop implant in a semiconductor deviceAGERE SYSTEMS INC·Filed 2001·Granted Oct 29, 2002·5 cites·18 claims
- 2051US6506641B1Use of selective oxidation to improve LDMOS power transistorsAGERE SYSTEMS INC·Filed 2000·Granted Jan 14, 2003·2 cites·9 claims
- 2151US5711891AWafer processing using thermal nitride etch maskLUCENT TECHNOLOGIES INC·Filed 1995·Granted Jan 27, 1998·11 cites·8 claims
- 2247US6737339B2Semiconductor device having a doped lattice matching layer and a method of manufacture thereforAGERE SYSTEMS INC·Filed 2001·Granted May 18, 2004·1 cites·8 claims
- 2346US7927939B2Method of manufacturing a laterally diffused metal oxide semiconductor deviceAGERE SYSTEMS INC·Filed 2001·Granted Apr 19, 2011·2 cites·7 claims
- 2446US6358865B2Oxidation of silicon using fluorine implantAGERE SYST GUARDIAN CORP·Filed 1999·Granted Mar 19, 2002·15 cites·54 claims
- 2545US6537135B1Curvilinear chemical mechanical planarization device and methodAGERE SYSTEMS INC·Filed 1999·Granted Mar 25, 2003·10 cites·2 claims
- 2644US5224311ATrailer anchor apparatusPEARCE CHARLES W·Filed 1991·Granted Jul 6, 1993·21 cites·6 claims
- 2743US6855991B2Semiconductor device having a doped lattice matching layer and a method of manufacture thereforAGERE SYSTEMS INC·Filed 2004·Granted Feb 15, 2005·0 cites·9 claims
- 2841US2009267145A1Mosfet device having dual interlevel dielectric thickness and method of making sameCICLON SEMICONDUCTOR DEVICE CO·Filed 2008·Application pending·0 cites
- 2937US2002132547A1Breathable nonwoven/film laminateFiled 2001·Application pending·0 cites
- 3025US5488749ASink and disposal cleaning toolFiled 1994·Granted Feb 6, 1996·9 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →