Inventor · disambiguated record
Chih-Tang Peng
Also filed as: PENG CHIH-TANG
69 granted patents·5 pending applications·226 citations·filing 2001–2024
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD51TAIWAN SEMICONDUCTOR MFG11LEE TZE-LIANG2CHANG CHIA-WEI1INTEGRATED CRYSTAL TECHNOLOGY1
Top patents by PatentIndex Score
74 records- 0197US8895446B2Fin deformation modulationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 25, 2014·31 cites·20 claims
- 0295US8748989B2Fin field effect transistorsLin yu chao·Filed 2012·Granted Jun 10, 2014·24 cites·20 claims
- 0393US10332746B1Post UV cure for gapfill improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 25, 2019·9 cites·20 claims
- 0493US9704974B2Process of manufacturing Fin-FET deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 11, 2017·11 cites·20 claims
- 0593US8546891B2Fin profile structure and method of making sameCHANG CHIA-WEI·Filed 2012·Granted Oct 1, 2013·19 cites·14 claims
- 0690US7592710B2Bond pad structure for wire bondingTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Sep 22, 2009·19 cites·20 claims
- 0789US9318447B2Semiconductor device and method of forming vertical structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 19, 2016·6 cites·17 claims
- 0889US8329552B1Semiconductor device and method of manufacturePENG CHIH-TANG·Filed 2011·Granted Dec 11, 2012·11 cites·20 claims
- 0987US10840154B2Method for forming semiconductor structure with high aspect ratioTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 17, 2020·3 cites·20 claims
- 1087US9853102B2Tunnel field-effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 26, 2017·7 cites·20 claims
- 1187US9276062B2Fin deformation modulationTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 1, 2016·6 cites·20 claims
- 1287US8822283B2Self-aligned insulated film for high-k metal gate deviceNG JIN-AUN·Filed 2011·Granted Sep 2, 2014·7 cites·20 claims
- 1385US11823960B2Method for forming semiconductor structure with high aspect ratioTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 21, 2023·1 cites·20 claims
- 1485US8735252B2Method of semiconductor integrated circuit fabricationYU WEIBO·Filed 2012·Granted May 27, 2014·9 cites·15 claims
- 1584US8048752B2Spacer shape engineering for void-free gap-filling processTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Nov 1, 2011·9 cites·18 claims
- 1683US12369390B2Method for forming semiconductor structure with high aspect ratioTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 22, 2025·0 cites·20 claims
- 1783US12266728B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Apr 1, 2025·0 cites·20 claims
- 1883US10269937B2Semiconductor strips with undercuts and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·2 cites·20 claims
- 1981US9177955B2Isolation region gap fill methodTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 3, 2015·6 cites·13 claims
- 2080US12170199B2Cyclic spin-on coating process for forming dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 2180US10468409B2FinFET device with oxidation-resist STI liner structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·3 cites·20 claims
- 2280US10361113B2Formation and in-situ treatment processes for gap fill layersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 23, 2019·2 cites·20 claims
- 2379US11942549B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·0 cites·20 claims
- 2479US9647066B2Dummy FinFET structure and method of making sameLU CHANG-SHEN·Filed 2012·Granted May 9, 2017·8 cites·20 claims
- 2579US9142402B2Uniform shallow trench isolation regions and the method of forming the sameLIOU YU-LING·Filed 2011·Granted Sep 22, 2015·6 cites·18 claims
- 2679US2024387237A1Finfet device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2777US12315759B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 27, 2025·0 cites·20 claims
- 2877US9478631B2Vertical-gate-all-around devices and method of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 25, 2016·4 cites·19 claims
- 2977US9287129B2Method of fabricating FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 15, 2016·3 cites·15 claims
- 3076US10388531B2Self-aligned insulated film for high-k metal gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 20, 2019·1 cites·20 claims
- 3176US9443961B2Semiconductor strips with undercuts and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 13, 2016·2 cites·20 claims
- 3275US11791154B2Cyclic spin-on coating process for forming dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 3375US10727064B2Post UV cure for gapfill improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·1 cites·20 claims
- 3473US10354923B2Semiconductor device and method for atomic layer deposition of a dielectric over a substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·1 cites·20 claims
- 3572US11862508B2FinFET device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·0 cites·20 claims
- 3672US11527653B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 13, 2022·0 cites·20 claims
- 3772US2024371871A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3871US12112974B2Integrated circuit isolation feature and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 3971US8658539B2Fin profile structure and method of making sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 25, 2014·2 cites·20 claims
- 4070US11227788B2Method of forming isolation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·0 cites·20 claims
- 4169US8629508B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jan 14, 2014·1 cites·15 claims
- 4267US10943820B2Gap-fill method having improved gap-fill capabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·1 cites·20 claims
- 4367US2022376079A1Semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4466US9520296B2Semiconductor device having a low divot of alignment between a substrate and an isolation thereof and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 13, 2016·1 cites·17 claims
- 4565US11094545B2Self-aligned insulated film for high-K metal gate deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 17, 2021·0 cites·20 claims
- 4665US9941394B2Tunnel field-effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 10, 2018·1 cites·20 claims
- 4764US8404561B2Method for fabricating an isolation structureLEE TZE-LIANG·Filed 2010·Granted Mar 26, 2013·2 cites·20 claims
- 4862US12119345B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 15, 2024·0 cites·20 claims
- 4962US10707114B2Method of forming isolation layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 7, 2020·0 cites·20 claims
- 5062US10643902B2Semiconductor device and method for atomic layer deposition of a dielectric over a substrateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 5, 2020·0 cites·20 claims
Showing the top 50 of 74 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →