Inventor · disambiguated record

Cheng-Yi Peng

Also filed as: PENG CHENG · PENG CHENG-YI

106 granted patents·17 pending applications·1,006 citations·filing 2007–2025

99Inventor score

Technology areasH10P H10D H10W H01L C23C

Files withTAIWAN SEMICONDUCTOR MFG CO LTD113 TAIWAN SEMICONDUCTOR MFG3 SHANGHAI INST MICROSYS & INF2 LEE TSUNG-LIN1 NEW JERSEY INST TECHNOLOGY1

Top patents by PatentIndex Score

123 records

0199US9853101B2Strained nanowire CMOS device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 26, 2017·151 cites·20 claims
0298US9570580B1Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 14, 2017·23 cites·20 claims
0398US9171929B2Strained structure of semiconductor device and method of making the strained structureLEE TSUNG-LIN·Filed 2012·Granted Oct 27, 2015·593 cites·20 claims
0497US11233119B2Core-shell nanostructures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·4 cites·20 claims
0597US10276697B1Negative capacitance FET with improved reliability performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·19 cites·20 claims
0697US10164048B1Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·14 cites·20 claims
0797US9716146B2Integrated circuit structure and method with solid phase diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 25, 2017·12 cites·20 claims
0897US9472669B1Semiconductor Fin FET device with epitaxial source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 18, 2016·24 cites·20 claims
0996US10686074B2Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·10 cites·20 claims
1096US10468500B1FinFET fabrication methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·9 cites·20 claims
1196US10164016B2Integrated circuit structure and method with solid phase diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·9 cites·19 claims
1296US9647071B2FINFET structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 9, 2017·11 cites·20 claims
1395US10153280B2Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 11, 2018·7 cites·19 claims
1494US11233149B2Spacer structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·3 cites·19 claims
1594US10727298B2Strained nanowire CMOS device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·5 cites·20 claims
1693US10418363B2Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 17, 2019·5 cites·20 claims
1793US9646994B2Semiconductor devices and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 9, 2017·8 cites·20 claims
1893US9627531B1Field-effect transistor with dual vertical gatesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·8 cites·20 claims
1992US11769817B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 26, 2023·2 cites·20 claims
2091US11929422B2Passivation layers for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 12, 2024·1 cites·20 claims
2191US10651287B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·4 cites·20 claims
2291US9741829B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 22, 2017·5 cites·19 claims
2390US10854605B2Replacement gate process for FinFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·3 cites·20 claims
2489US11881530B2Spacer structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 23, 2024·1 cites·20 claims
2589US10818562B2Semiconductor structure and testing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 27, 2020·4 cites·20 claims
2689US10741678B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 11, 2020·4 cites·20 claims
2789US10396156B2Method for FinFET LDD dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 27, 2019·4 cites·20 claims
2889US9905477B2Inverters and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 27, 2018·5 cites·20 claims
2988US11621343B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 4, 2023·1 cites·20 claims
3088US11101360B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·4 cites·20 claims
3188US10732209B2Semiconductor test device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·3 cites·20 claims
3288US9583490B2Inverters and manufacturing methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 28, 2017·5 cites·20 claims
3387US11133222B2Method for manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 28, 2021·3 cites·20 claims
3487US10670641B2Semiconductor test device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 2, 2020·2 cites·19 claims
3587US2024379814A1Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3686US12142663B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
3786US10872893B2Dual nitride stressor for semiconductor device and method of manufacturingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 22, 2020·3 cites·20 claims
3885US12349382B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 1, 2025·0 cites·20 claims
3985US12218203B2Integrated circuit structure and method with solid phase diffusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
4085US11302695B2Method for forming integrated semiconductor device with 2D material layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·1 cites·20 claims
4184US10991800B2Method for FinFET LDD dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·2 cites·18 claims
4284US10727230B2Integrated semiconductor device with 2D material layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 28, 2020·2 cites·20 claims
4384US2024371970A1Finfet fabrication methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4483US10312369B2Semiconductor Fin FET device with epitaxial source/drainTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 4, 2019·2 cites·20 claims
4583US9391078B1Method and structure for finFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jul 12, 2016·4 cites·20 claims
4683US2025366071A1Channel extension structures for semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4783US2024322011A1Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
4883US2025366149A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
4982US12040381B2Method of manufacturing semiconductor devices and semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 16, 2024·0 cites·20 claims
5082US11798989B2Strained nanowire CMOS device and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims

Showing the top 50 of 123 patent records by PatentIndex Score.

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →