Inventor · disambiguated record

Chun-Yen Peng

Also filed as: PENG CHUN-YEN

32 granted patents·12 pending applications·33 citations·filing 2011–2025

95Inventor score

Technology areasH10P H10H G02B H10D H10F

Files withTAIWAN SEMICONDUCTOR MFG CO LTD38 HON HAI PREC IND CO LTD3 CRYSTALWISE TECHNOLOGY INC1 TSENG BO-HSIANG1 WU YEW-CHUNG SERMON1

Top patents by PatentIndex Score

44 records

0197US11309398B2Semiconductor device and manufacturing method for the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 19, 2022·4 cites·20 claims
0296US11855128B2Metal insulator metal (MIM) structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 26, 2023·2 cites·20 claims
0396US11848370B2Semiconductor device and manufacturing method for the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 19, 2023·2 cites·20 claims
0496US11563079B2Metal insulator metal (MIM) structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 24, 2023·4 cites·20 claims
0596US10950447B2Semiconductor device having hydrogen in a dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 16, 2021·3 cites·20 claims
0694US11776814B2Method of forming semiconductor device by driving hydrogen into a dielectric layer from another dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
0790US10504735B2Method of forming a semiconductor device by high-pressure anneal and post-anneal treatmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·4 cites·20 claims
0889US10714348B2Semiconductor device having hydrogen in a dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 14, 2020·3 cites·20 claims
0988US12322595B2Semiconductor devices devices including crystallized layer having multiple crystalline orientations and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 3, 2025·0 cites·20 claims
1087US2025279276A1Semiconductor devices including crystallized layer having multiple crystalline orientations and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1186US12033853B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
1284US12387935B2Dipole-engineered high-k gate dielectric and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 12, 2025·0 cites·20 claims
1384US12302592B2Metal insulator metal (MIM) structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
1484US12300738B2Semiconductor device and manufacturing method for the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
1582US12382671B2Semiconductor structure and manufacturing method for the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·20 claims
1682US2025308906A1Dipole-engineered high-k gate dielectric and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1782US2025351613A1Photonic device formed using self-aligned processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1881US12136659B2Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 5, 2024·0 cites·20 claims
1981US12020941B2Dipole-engineered high-k gate dielectric and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
2081US2025334738A1Stress structures for modulating optical devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2180US12243932B2Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
2280US12125706B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 22, 2024·0 cites·20 claims
2380US8624279B2Light emitting diode substrate and light emitting diodeTSENG BO-HSIANG·Filed 2012·Granted Jan 7, 2014·8 cites·20 claims
2479US11011372B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 18, 2021·1 cites·20 claims
2576US11823894B2Semiconductor devices and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 21, 2023·0 cites·20 claims
2676US11777031B2Semiconductor structure and manufacturing method for the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
2776US2025258336A1Stress structures for modulating optical devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2875US11777017B2Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
2975US2025063845A1Photonic device formed using self-aligned processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3074US11817489B2Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 14, 2023·0 cites·20 claims
3172US11710665B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 25, 2023·0 cites·20 claims
3269US11171219B2Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 9, 2021·0 cites·20 claims
3368US12183581B2Method of forming a semiconductor device by driving hydrogen into a dielectric layer from another dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 31, 2024·0 cites·20 claims
3468US11257950B2Semiconductor structure and manufacturing method for the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
3567US11264489B2Negative-capacitance and ferroelectric field-effect transistor (NCFET and FE-FET) devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·0 cites·20 claims
3665US11101180B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·0 cites·20 claims
3760US2025380484A1Using a dipole layer to dope a gate dielectric of a gate-all-around deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
3857US2025089397A1Photodetectors and methods of formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
3956US11784052B2Dipole-engineered high-k gate dielectric and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 10, 2023·0 cites·20 claims
4054US2023369828A1Nanocrystal array, laser device, and display deviceHON HAI PREC IND CO LTD·Filed 2023·Application pending·0 cites
4152US2024128151A1Package structureHON HAI PREC IND CO LTD·Filed 2023·Application pending·0 cites
4251US12453221B2Micro LED display deviceHON HAI PREC IND CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
4346US2013285098A1Patterned substrate and light emitting diode structureCRYSTALWISE TECHNOLOGY INC·Filed 2013·Application pending·0 cites
4433US2012292630A1Led substrate and ledWU YEW-CHUNG SERMON·Filed 2011·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →