Inventor · disambiguated record
Chien-Hsiung Peng
Also filed as: PENG CHIEN H · PENG CHIEN-HSIUNG
17 granted patents·651 citations·filing 1992–2012
95Inventor score
Top patents by PatentIndex Score
17 records- 0191US5821169AHard mask method for transferring a multi-level photoresist patternSHARP MICROELECT TECH INC·Filed 1996·Granted Oct 13, 1998·128 cites·22 claims
- 0290US5431958AMetalorganic chemical vapor deposition of ferroelectric thin filmsSHARP KK·Filed 1992·Granted Jul 11, 1995·76 cites·9 claims
- 0388US5527567AMetalorganic chemical vapor deposition of layered structure oxidesCERAM INC·Filed 1995·Granted Jun 18, 1996·97 cites·37 claims
- 0482US5625587ARare earth manganate films made by metalorganic decomposition or metalorganic chemical vapor deposition for nonvolatile memory devicesVIRGINIA POLYTECHNIC INST·Filed 1995·Granted Apr 29, 1997·58 cites·2 claims
- 0582US5262199ACoating porous materials with metal oxides and other ceramics by MOCVDINNOVATIVE TECH CENTER·Filed 1992·Granted Nov 16, 1993·49 cites·24 claims
- 0672US6043164AMethod for transferring a multi-level photoresist patternSHARP LAB OF AMERICA INC·Filed 1996·Granted Mar 28, 2000·42 cites·27 claims
- 0772US6011285AC-axis oriented thin film ferroelectric transistor memory cell and method of making the sameSHARP LAB OF AMERICA INC·Filed 1998·Granted Jan 4, 2000·32 cites·17 claims
- 0870US6218249B1MOS transistor having shallow source/drain junctions and low leakage currentSHARP LAB OF AMERICA INC·Filed 1999·Granted Apr 17, 2001·25 cites·2 claims
- 0969US6071782APartial silicidation method to form shallow source/drain junctionsSHARP LAB OF AMERICA INC·Filed 1998·Granted Jun 6, 2000·25 cites·1 claims
- 1065US5629229AMetalorganic chemical vapor deposition of (Ba1-x Srx)RuO3 /(Ba1-x Srx)TIO3 /(Ba1-x Srx)TiO3 /(Ba1- Srx)RuO3 capacitors for high dielectric materialsSHARP KK·Filed 1995·Granted May 13, 1997·28 cites·8 claims
- 1163US6242771B1Chemical vapor deposition of PB5GE3O11 thin film for ferroelectric applicationsSHARP LAB OF AMERICA INC·Filed 1999·Granted Jun 5, 2001·27 cites·3 claims
- 1263US5717234AMetalorganic chemical vapor deposition of (ba1-x Srx)RuO3 /Ba1-x Srx)TiO3 /(Ba1-x SRx)RuO3 capacitors for high dielectric materialsSHARP KK·Filed 1997·Granted Feb 10, 1998·24 cites·5 claims
- 1359US5989965ANitride overhang structures for the silicidation of transistor electrodes with shallow junctionSHARP LAB OF AMERICA INC·Filed 1998·Granted Nov 23, 1999·16 cites·16 claims
- 1450US6339245B1Nitride overhang structure for the silicidation of transistor electrodes with shallow junctionsSHARP LAB OF AMERICA INC·Filed 1999·Granted Jan 15, 2002·10 cites·16 claims
- 1546US5593727AProduction of films of SiO2 by chemical vapor depositionVIRGINIA TECH INTELL PROP·Filed 1993·Granted Jan 14, 1997·6 cites·16 claims
- 1643US9207277B2System and method for generating a yield forecast based on wafer acceptance testsNVIDIA CORP·Filed 2012·Granted Dec 8, 2015·0 cites·20 claims
- 1743US6018171AShallow junction ferroelectric memory cell having a laterally extending p-n junction and method of making the sameSHARP LAB OF AMERICA INC·Filed 1997·Granted Jan 25, 2000·8 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →