Inventor · disambiguated record
Christopher W. Petz
Also filed as: PETZ CHRISTOPHER · PETZ CHRISTOPHER W
37 granted patents·7 pending applications·85 citations·filing 2013–2025
96Inventor score
Top patents by PatentIndex Score
44 records- 0198US9553263B1Resistive memory elements including buffer materials, and related memory cells, memory devices, electronic systemsMICRON TECHNOLOGY INC·Filed 2015·Granted Jan 24, 2017·23 cites·24 claims
- 0297US11393756B2Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systemsMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 19, 2022·5 cites·24 claims
- 0395US11145710B1Electrode/dielectric barrier material formation and structuresMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 12, 2021·5 cites·14 claims
- 0495US9419212B2Barrier film techniques and configurations for phase-change memory elementsINTEL CORP·Filed 2014·Granted Aug 16, 2016·20 cites·20 claims
- 0589US10354989B1Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 16, 2019·5 cites·32 claims
- 0688US10692572B2Variable resistance memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 23, 2020·2 cites·22 claims
- 0786US11289487B2Doped titanium nitride materials for DRAM capacitors, and related semiconductor devices, systems, and methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 29, 2022·3 cites·26 claims
- 0886US10811419B1Storage node shapingMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 20, 2020·4 cites·20 claims
- 0985US9209388B2Memory cells and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2013·Granted Dec 8, 2015·4 cites·29 claims
- 1083US10381072B2Phase change memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2014·Granted Aug 13, 2019·6 cites·12 claims
- 1182US10325653B2Variable resistance memory stack with treated sidewallsMICRON TECHNOLOGY INC·Filed 2017·Granted Jun 18, 2019·4 cites·20 claims
- 1281US2025293164A1Microelectronic devices including barrier structures, and related memory devicesLODESTAR LICENSING GROUP LLC·Filed 2025·Application pending·0 cites
- 1375US12507395B2Doped titanium nitride materials for dram capacitors, and related semiconductor devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Dec 23, 2025·0 cites·17 claims
- 1474US12484290B2Active area salicidation for NMOS and PMOS devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Nov 25, 2025·0 cites·15 claims
- 1574US2025267842A1Methods of Utilizing Etch-Stop Material During Fabrication of Capacitors, Integrated Assemblies Comprising CapacitorsMICRON TECHNOLOGY INC·Filed 2025·Application pending·0 cites
- 1673US12381153B2Microelectronic devices, memory devices, and electronic systemsMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 5, 2025·0 cites·16 claims
- 1773US9431606B1Memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Aug 30, 2016·2 cites·6 claims
- 1871US10707212B1Methods of forming an apparatus, and related apparatuses and electronic systemsMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 7, 2020·1 cites·23 claims
- 1970US11825662B2Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitorMICRON TECHNOLOGY INC·Filed 2021·Granted Nov 21, 2023·0 cites·36 claims
- 2068US10916564B2Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillarsMICRON TECHNOLOGY INC·Filed 2020·Granted Feb 9, 2021·0 cites·19 claims
- 2168US10304749B2Method and apparatus for improved etch stop layer or hard mask layer of a memory deviceINTEL CORP·Filed 2017·Granted May 28, 2019·1 cites·13 claims
- 2264US11127745B2Devices, methods of forming a device, and memory devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Sep 21, 2021·0 cites·19 claims
- 2364US10700091B2Assemblies having vertically-extending structures, and methods of forming assemblies having vertically-extending channel material pillarsMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 30, 2020·0 cites·8 claims
- 2463US10991882B2Methods of forming resistive memory elementsMICRON TECHNOLOGY INC·Filed 2019·Granted Apr 27, 2021·0 cites·20 claims
- 2563US2025159912A1Apparatus including bottom electrodes comprising oxygen-doped titanium nitride materials and related electronic devices and methods of forming the electronic devicesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2662US12324143B2Methods of utilizing etch-stop material during fabrication of capacitors, integrated assemblies comprising capacitorsMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 3, 2025·0 cites·9 claims
- 2762US2022028968A1Electrode/dielectric barrier material formation and structuresMICRON TECHNOLOGY INC·Filed 2021·Application pending·0 cites
- 2860US10446751B2Methods of forming resistive memory elementsMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 15, 2019·0 cites·10 claims
- 2959US11101274B2Ferroelectric capacitor, a ferroelectric memory cell, an array of ferroelectric memory cells, and a method of forming a ferroelectric capacitorMICRON TECHNOLOGY INC·Filed 2019·Granted Aug 24, 2021·0 cites·16 claims
- 3059US10546848B2Integrated assemblies and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 28, 2020·0 cites·14 claims
- 3159US10355014B1Assemblies having vertically-extending structuresMICRON TECHNOLOGY INC·Filed 2017·Granted Jul 16, 2019·0 cites·11 claims
- 3257US9893282B2Methods of forming resistive memory elementsMICRON TECHNOLOGY INC·Filed 2016·Granted Feb 13, 2018·0 cites·16 claims
- 3355US2024234482A9Microelectronic devices including capacitors, and related electronic systems and methodsMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 3453US9444042B2Memory cells and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Sep 13, 2016·0 cites·21 claims
- 3551US2024038588A1Methods of forming the microelectronic devices, and related microelectonic devices and electronic systemsMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 3650US11527548B2Semiconductor devices and electronic systems including an etch stop material, and related methodsMICRON TECHNOLOGY INC·Filed 2018·Granted Dec 13, 2022·0 cites·15 claims
- 3750US10957644B2Integrated structures with conductive regions having at least one element from group 2 of the periodic tableMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 23, 2021·0 cites·22 claims
- 3848US11515147B2Material deposition systems, and related methodsMICRON TECHNOLOGY INC·Filed 2019·Granted Nov 29, 2022·0 cites·20 claims
- 3947US11133461B2Laminate diffusion barriers and related devices and methodsINTEL CORP·Filed 2014·Granted Sep 28, 2021·0 cites·11 claims
- 4044US11251261B2Forming a barrier material on an electrodeMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 15, 2022·0 cites·9 claims
- 4143US12046658B2Electrode formationMICRON TECHNOLOGY INC·Filed 2019·Granted Jul 23, 2024·0 cites·18 claims
- 4242US11018298B2Phase change memory structuresINTEL CORP·Filed 2017·Granted May 25, 2021·0 cites·25 claims
- 4340US2021358919A1Methods of forming electronic apparatus with titanium nitride conductive structures, and related electronic apparatus and systemsMICRON TECHNOLOGY INC·Filed 2020·Application pending·0 cites
- 4438US11322502B2Apparatus including barrier materials within access line structures, and related methods and electronic systemsMICRON TECHNOLOGY INC·Filed 2019·Granted May 3, 2022·0 cites·26 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →