Inventor · disambiguated record
Chih-Heng Shen
Also filed as: SHEN CHIH-HENG
32 granted patents·345 citations·filing 1994–2020
97Inventor score
Top patents by PatentIndex Score
32 records- 0179US9882046B2Ultra high voltage semiconductor device with electrostatic discharge capabilitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 30, 2018·2 cites·19 claims
- 0279US6627971B1Polysilicon structures with different resistance values for gate electrodes, resistors, and capacitor platesTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Sep 30, 2003·21 cites·21 claims
- 0378US9312348B2Ultra high voltage semiconductor device with electrostatic discharge capabilitiesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Apr 12, 2016·3 cites·20 claims
- 0475US9166046B2Semiconductor device and method of manufacturingTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 20, 2015·3 cites·20 claims
- 0575US5723385AWafer edge seal ring structureTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Mar 3, 1998·46 cites·24 claims
- 0670US11233121B2Method of making bipolar transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·20 claims
- 0770US6071826AMethod of manufacturing CMOS image sensor leakage free with double layer spacerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 6, 2000·38 cites·37 claims
- 0869US6627475B1Buried photodiode structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Sep 30, 2003·15 cites·34 claims
- 0969US6380030B1Implant method for forming Si3N4 spacerTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Apr 30, 2002·25 cites·15 claims
- 1067US9647065B2Bipolar transistor structure having split collector region and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 9, 2017·1 cites·20 claims
- 1165US10840371B2Ultra high voltage semiconductor device with electrostatic discharge capabilitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 17, 2020·0 cites·20 claims
- 1262US5783097AProcess to avoid dielectric damage at the flat edge of the waterTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jul 21, 1998·28 cites·20 claims
- 1361US5747383AMethod for forming conductive lines and stacked viasTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted May 5, 1998·27 cites·19 claims
- 1461US5591673ATungsten stud process for stacked via applicationsTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Jan 7, 1997·32 cites·26 claims
- 1560US10461183B2Ultra high voltage semiconductor device with electrostatic discharge capabilitiesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 29, 2019·0 cites·20 claims
- 1658US6624466B2Implant method for forming Si3N4 spacerTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 23, 2003·7 cites·3 claims
- 1758US6407433B1Preventing gate oxide damage by post poly definition implantation while gate mask is onTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 18, 2002·5 cites·13 claims
- 1857US10686036B2Method of making bipolar transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 16, 2020·0 cites·20 claims
- 1951US9748377B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 29, 2017·0 cites·20 claims
- 2048US9558986B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jan 31, 2017·0 cites·14 claims
- 2148US6162584AMethod of fabricating polysilicon structures with different resistance values for gate electrodes, resistors and capacitor plates in an integrated circuitTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 19, 2000·14 cites·6 claims
- 2247US5668401AChessboard pattern layout for scribe linesTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Sep 16, 1997·11 cites·1 claims
- 2346US5929509AWafer edge seal ring structureTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jul 27, 1999·12 cites·17 claims
- 2445US6995064B2Halogen gettering method for forming field effect transistor (FET) deviceTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Feb 7, 2006·2 cites·20 claims
- 2544US6803327B1Cost effective polymide process to solve passivation extrusion or damage and SOG delminatesTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 12, 2004·14 cites·29 claims
- 2644US5913979AMethod for removing spin-on-glass at wafer edgeTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jun 22, 1999·12 cites·11 claims
- 2741US9985094B2Super junction with an angled trench, transistor having the super junction and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 29, 2018·0 cites·20 claims
- 2840US6147372ALayout of an image sensor for increasing photon induced currentTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Nov 14, 2000·8 cites·21 claims
- 2939US6143474AMethod of fabricating polysilicon structures with different resistance values for gate electrodes, resistors, and capacitor platesTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Nov 7, 2000·7 cites·19 claims
- 3038US6949471B2Method for fabricating poly patternsTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Sep 27, 2005·0 cites·29 claims
- 3138US5492868ACapped reflow process to avoid contact autodoping and supress tungsten silicide peelingTAIWAN SEMICONDUCTOR MFG·Filed 1994·Granted Feb 20, 1996·9 cites·4 claims
- 3233US6187639B1Method to prevent gate oxide damage by post poly definition implantationTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Feb 13, 2001·3 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →