Inventor · disambiguated record
Chien-Chang Su
Also filed as: SU CHIEN-CHANG
48 granted patents·10 pending applications·972 citations·filing 2001–2024
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30TAIWAN SEMICONDUCTOR MFG12SU CHIEN CHANG4IND TECH RES INST2TSAI CHUN HSIUNG2
Top patents by PatentIndex Score
58 records- 0199US8652894B2Method for fabricating a FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Feb 18, 2014·394 cites·20 claims
- 0299US8362575B2Controlling the shape of source/drain regions in FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Jan 29, 2013·242 cites·18 claims
- 0397US9831116B2FETS and methods of forming FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 28, 2017·23 cites·20 claims
- 0497US8263451B2Epitaxy profile engineering for FinFETsSU CHIEN-CHANG·Filed 2010·Granted Sep 11, 2012·83 cites·20 claims
- 0596US8310013B2Method of fabricating a FinFET deviceLIN HSIEN-HSIN·Filed 2010·Granted Nov 13, 2012·79 cites·19 claims
- 0695US8975144B2Controlling the shape of source/drain regions in FinFETsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Mar 10, 2015·18 cites·20 claims
- 0794US11728208B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
- 0893US9515187B2Controlling the shape of source/drain regions in FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 6, 2016·9 cites·20 claims
- 0992US8853039B2Defect reduction for formation of epitaxial layer in source and drain regionsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 7, 2014·11 cites·20 claims
- 1091US11854901B2Semiconductor method and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 1191US11004724B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·5 cites·19 claims
- 1291US8557692B2FinFET LDD and source drain implant techniqueTSAI CHUN HSIUNG·Filed 2010·Granted Oct 15, 2013·15 cites·18 claims
- 1390US8846461B2Silicon layer for stopping dislocation propagationTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 30, 2014·8 cites·17 claims
- 1490US8344447B2Silicon layer for stopping dislocation propagationTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Jan 1, 2013·13 cites·11 claims
- 1589US9666691B2Epitaxy profile engineering for FinFETsSU CHIEN-CHANG·Filed 2012·Granted May 30, 2017·9 cites·17 claims
- 1687US9601626B2Semiconductor device including fin structure with two channel layers and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 21, 2017·4 cites·20 claims
- 1787US8778767B2Integrated circuits and fabrication methods thereofHUANG SHIH-HSIEN·Filed 2011·Granted Jul 15, 2014·5 cites·20 claims
- 1886US12191393B2Low Ge isolated epitaxial layer growth over nano-sheet architecture design for RP reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 7, 2025·1 cites·20 claims
- 1986US2025006549A1FETS and Methods of Forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2085US10854602B2FinFET device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 1, 2020·3 cites·20 claims
- 2185US8906789B2Asymmetric cyclic desposition etch epitaxyTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 9, 2014·9 cites·20 claims
- 2284US2023298891A1Integrated circuits having source/drain structure and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2382US11923200B2Integrated circuits having source/drain structure and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 2482US9117905B2Method for incorporating impurity element in EPI silicon processSU CHIEN-CHANG·Filed 2009·Granted Aug 25, 2015·7 cites·20 claims
- 2582US8487354B2Method for improving selectivity of epi processCHEN KUAN-YU·Filed 2009·Granted Jul 16, 2013·6 cites·20 claims
- 2679US10734517B2Integrated circuits having source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 4, 2020·1 cites·12 claims
- 2779US9786780B2Integrated circuits having source/drain structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 10, 2017·2 cites·20 claims
- 2879US9412870B2Device with engineered epitaxial region and methods of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·2 cites·20 claims
- 2977US9379208B2Integrated circuits and methods of forming integrated circuitsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 28, 2016·2 cites·20 claims
- 3077US9117843B2Device with engineered epitaxial region and methods of making sameWONG KING-YUEN·Filed 2011·Granted Aug 25, 2015·3 cites·20 claims
- 3176US2025089295A1Low ge isolated epitaxial layer growth over nano-sheet architecture design for rp reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3275US11373867B2Integrated circuits having source/drain structure and method of makingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 28, 2022·0 cites·20 claims
- 3374US8884341B2Integrated circuitsTSAI CHUN HSIUNG·Filed 2011·Granted Nov 11, 2014·2 cites·20 claims
- 3473US9373695B2Method for improving selectivity of epi processTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 21, 2016·2 cites·20 claims
- 3570US11367660B2Semiconductor method and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 21, 2022·0 cites·20 claims
- 3670US2024194788A1Nanosheet semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3767US10177143B2FinFET device and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 8, 2019·1 cites·18 claims
- 3867US8343872B2Method of forming strained structures with compound profiles in semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 1, 2013·3 cites·13 claims
- 3966US7596655B2Flash storage system with data storage securityPROLIFIC TECHNOLOGY INC·Filed 2006·Granted Sep 29, 2009·5 cites·25 claims
- 4063US10867862B2Semiconductor method and deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 4162US10326023B2Semiconductor device including fin structure with two channel layers and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 18, 2019·0 cites·20 claims
- 4262US9564321B2Cyclic epitaxial deposition and etch processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 7, 2017·1 cites·20 claims
- 4359US11942550B2Nanosheet semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·0 cites·20 claims
- 4459US10269618B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·0 cites·20 claims
- 4559US9076734B2Defect reduction for formation of epitaxial layer in source and drain regionsTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jul 7, 2015·0 cites·20 claims
- 4658US12094761B2FETs and methods of forming FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 4758US9966469B2Semiconductor device including fin structure with two channel layers and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 8, 2018·0 cites·20 claims
- 4856US9865732B2Integrated circuits and methods of forming integrated circuitsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 9, 2018·0 cites·19 claims
- 4955US2024021618A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5051US9356150B2Method for incorporating impurity element in EPI silicon processTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 31, 2016·0 cites·20 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →