Inventor · disambiguated record
Cheng Tan
Also filed as: TAN CHENG · TAN CHENG CHEH · TAN CHENG CHEH D · TAN CHENG CHEH DENNIS
4 granted patents·15 pending applications·11 citations·filing 2001–2023
65Inventor score
Files withINTEL CORP8AGENCY SCIENCE TECH & RES4SEMICONDUCTOR MFG INT SHANGHAI CORP2CHARTERED SEMICONDUCTOR MFG1CHI DONG Z1
Top patents by PatentIndex Score
19 records- 0176US7989338B2Grain boundary blocking for stress migration and electromigration improvement in CU interconnectsGLOBALFOUNDRIES SG PTE LTD·Filed 2005·Granted Aug 2, 2011·8 cites·22 claims
- 0260US11929488B2AB5-based hydrogen storage alloy, electrode for Ni-MH battery, secondary battery, and preparation method of hydrogen storage alloyUNIV SOUTH CHINA TECH·Filed 2019·Granted Mar 12, 2024·0 cites·19 claims
- 0357US12490460B2Dielectric sidewall features for tuning thin film transistor (TFT) parasiticsINTEL CORP·Filed 2022·Granted Dec 2, 2025·0 cites·20 claims
- 0449US2024139812A1Method for fabricating a nitrogenous steel materialAGENCY SCIENCE TECH & RES·Filed 2022·Application pending·0 cites
- 0548US2023245892A1Semiconductor structure and formation method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2023·Application pending·0 cites
- 0647US2022145484A1An electrochemical method of reducing metal oxideAGENCY SCIENCE TECH & RES·Filed 2020·Application pending·0 cites
- 0747US2023369508A1Multi-layered or graded semiconductor region in thin film transistor (tft) structuresINTEL CORP·Filed 2022·Application pending·0 cites
- 0847US2023369506A1Laterally recessed gate electrode in thin film transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 0946US2023371233A1Multi-tier memory structure with graded characteristicsINTEL CORP·Filed 2022·Application pending·0 cites
- 1046US2024088243A1Semiconductor structure and forming method thereofSEMICONDUCTOR MFG INT SHANGHAI CORP·Filed 2023·Application pending·0 cites
- 1146US2023369509A1Doping contacts of thin film transistorsINTEL CORP·Filed 2022·Application pending·0 cites
- 1245US6878623B2Technique to achieve thick silicide film for ultra-shallow junctionsCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Apr 12, 2005·3 cites·25 claims
- 1345US2023307291A1Implantation through an etch stop layerINTEL CORP·Filed 2022·Application pending·0 cites
- 1445US2023271255A1Method of fabricating a graded metallic structureAGENCY SCIENCE TECH & RES·Filed 2021·Application pending·0 cites
- 1544US2023369444A1Multi-layered or graded gate dielectric in thin film transistor (tft) structuresINTEL CORP·Filed 2022·Application pending·0 cites
- 1643US2022359758A1Metal oxide thin film transistors with multi-composition gate dielectricINTEL CORP·Filed 2021·Application pending·0 cites
- 1742US2021027924A1Soft magnetic compositesAGENCY SCIENCE TECH & RES·Filed 2019·Application pending·0 cites
- 1831US2008093631A1Contact structure for semiconductor devicesCHI DONG Z·Filed 2007·Application pending·0 cites
- 1930US2002102802A1Novel technique to achieve thick silicide film for ultra-shallow junctionsFiled 2001·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →