Inventor · disambiguated record
Chi-Lin Teng
Also filed as: TENG CHI-LIN
45 granted patents·22 pending applications·61 citations·filing 1996–2025
97Inventor score
Top patents by PatentIndex Score
67 records- 0198US11538749B2Interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 27, 2022·7 cites·20 claims
- 0297US11810815B2Dielectric capping structure overlying a conductive structure to increase stabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 7, 2023·3 cites·20 claims
- 0397US11322395B2Dielectric capping structure overlying a conductive structure to increase stabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 3, 2022·4 cites·20 claims
- 0496US11854963B2Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·3 cites·20 claims
- 0596US11355430B2Capping layer overlying dielectric structure to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 7, 2022·4 cites·20 claims
- 0694US12176246B2Dielectric capping structure overlying a conductive structure to increase stabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·1 cites·20 claims
- 0793US12068193B2Semiconductor device structure with interconnect structure having air gapTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 20, 2024·2 cites·20 claims
- 0892US12230537B2Semiconductor device structure having air gap and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 18, 2025·1 cites·20 claims
- 0992US10211097B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 19, 2019·7 cites·7 claims
- 1092US9818690B2Self-aligned interconnection structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 14, 2017·9 cites·20 claims
- 1190US11990400B2Capping layer overlying dielectric structure to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·1 cites·20 claims
- 1287US9659857B2Semiconductor structure and method making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 23, 2017·6 cites·19 claims
- 1387US2025336716A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1487US2025364400A1Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1586US12412780B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 9, 2025·0 cites·20 claims
- 1686US2025357195A1Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1783US12431386B2Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 30, 2025·0 cites·20 claims
- 1883US11658092B2Thermal interconnect structure for thermal management of electrical interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 23, 2023·1 cites·20 claims
- 1983US2025323095A1Semiconductor device structure having air gap and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2082US12463134B2Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
- 2182US11302798B2Semiconductor devices with air gate spacer and air gate capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 12, 2022·1 cites·20 claims
- 2281US11830808B2Semiconductor structure and method making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 28, 2023·0 cites·20 claims
- 2379US12033889B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 9, 2024·0 cites·20 claims
- 2479US2025046673A1Thermal interconnect structure for thermal management of electrical interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2578US12165945B2Thermal interconnect structure for thermal management of electrical interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 2678US2024347625A1Semiconductor devices with air gate spacer and air gate capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2777US12176247B2Metal oxide composite as etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 2877US8735278B2Copper etch scheme for copper interconnect structureLEE MING HAN·Filed 2012·Granted May 27, 2014·6 cites·11 claims
- 2977US2025132197A1Metal oxide composite as etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3075US2024371764A1Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3174US11328991B2Semiconductor structure and method making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·0 cites·20 claims
- 3274US2024379416A1Semiconductor device having thermally conductive air gap structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3374US2024274524A1Capping layer overlying dielectric structure to increase reliabilityTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3474US2024379413A1Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3574US2024379435A1Semiconductor structure having self-aligned conductive structure and method for forming the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3673US12027606B2Semiconductor devices with air gate spacer and air gate capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·20 claims
- 3773US11557511B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 17, 2023·0 cites·20 claims
- 3873US9281263B2Interconnect structure including a continuous conductive bodyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 8, 2016·3 cites·18 claims
- 3973US2024162084A1Semiconductor structure having air gaps and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4073US2024304541A1Barrier & air-gap scheme for high performance interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4171US12062572B2Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
- 4270US12381113B2Semiconductor device structure having air gap and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 5, 2025·0 cites·19 claims
- 4370US9373579B2Protecting layer in a semiconductor structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 21, 2016·2 cites·19 claims
- 4469US12094764B2Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
- 4568US12002749B2Barrier and air-gap scheme for high performance interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 4, 2024·0 cites·20 claims
- 4668US11450566B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 20, 2022·0 cites·21 claims
- 4766US11923243B2Semiconductor structure having air gaps and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 4865US2022359385A1Interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4964US11315828B2Metal oxide composite as etch stop layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 26, 2022·0 cites·20 claims
- 5063US12482703B2Semiconductor device having thermally conductive air gap structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 25, 2025·0 cites·20 claims
Showing the top 50 of 67 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →