Inventor · disambiguated record
Chih-Yuan Ting
Also filed as: TING CHIH-YUAN
81 granted patents·8 pending applications·175 citations·filing 2002–2025
99Inventor score
Top patents by PatentIndex Score
89 records- 0196US9966309B2Contact plug without seam hole and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 8, 2018·10 cites·20 claims
- 0295US9991200B2Air gap structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jun 5, 2018·18 cites·20 claims
- 0394US10714383B2Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 14, 2020·6 cites·20 claims
- 0493US10658184B2Pattern fidelity enhancement with directional patterning technologyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 19, 2020·7 cites·12 claims
- 0593US9312222B2Patterning approach for improved via landing profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 12, 2016·11 cites·20 claims
- 0692US7968506B2Wet cleaning stripping of etch residue after trench and via opening formation in dual damascene processTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Jun 28, 2011·20 cites·3 claims
- 0791US11101429B2Metal etching stop layer in magnetic tunnel junction memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 24, 2021·5 cites·20 claims
- 0890US10651373B2Memory device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·4 cites·20 claims
- 0989US10157752B2Systems and methods for in SITU maintenance of a thin hardmask during an etch processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 18, 2018·4 cites·20 claims
- 1089US9406589B2Via corner engineering in trench-first dual damascene processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Aug 2, 2016·7 cites·19 claims
- 1188US9892960B2Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·4 cites·20 claims
- 1288US9153479B2Method of preventing a pattern collapseTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 6, 2015·7 cites·21 claims
- 1386US12317751B2Integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 1486US11961761B2Mitigating pattern collapseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 16, 2024·1 cites·20 claims
- 1586US9401329B2Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jul 26, 2016·5 cites·19 claims
- 1685US9048299B2Patterning approach to reduce via to via minimum spacingTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jun 2, 2015·5 cites·20 claims
- 1785US2025255190A1Integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1884US9502287B2Method of preventing pattern collapseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·3 cites·20 claims
- 1984US9472448B2Contact plug without seam hole and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 18, 2016·4 cites·20 claims
- 2083US10290538B2Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 14, 2019·2 cites·20 claims
- 2182US2024258163A1Mitigating pattern collapseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2281US9929094B2Semiconductor device having air gap structures and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Mar 27, 2018·2 cites·20 claims
- 2381US9496224B2Semiconductor device having air gap structures and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 15, 2016·4 cites·19 claims
- 2480US11800812B2Integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
- 2580US9601348B2Interconnect structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 21, 2017·3 cites·20 claims
- 2680US9257298B2Systems and methods for in situ maintenance of a thin hardmask during an etch processTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 9, 2016·3 cites·20 claims
- 2780US9076729B2Method of forming interconnection structure having notches for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 7, 2015·4 cites·20 claims
- 2879US9627250B2Method and apparatus for back end of line semiconductor device processingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 18, 2017·3 cites·18 claims
- 2979US9583384B2Via corner engineering in trench-first dual damascene processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 28, 2017·2 cites·20 claims
- 3078US12368076B2Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 3178US12341057B2Interconnect line for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 24, 2025·0 cites·20 claims
- 3278US8927353B2Fin field effect transistor and method of forming the sameHSU JU-WANG·Filed 2007·Granted Jan 6, 2015·8 cites·17 claims
- 3378US8697537B2Method of patterning for a semiconductor deviceLEE CHIA YING·Filed 2012·Granted Apr 15, 2014·4 cites·20 claims
- 3478US2024251568A1Semiconductor device with magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3576US10861788B2Patterning approach for improved via landing profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 8, 2020·1 cites·20 claims
- 3676US8957006B2Cleaning solution comprising an ether acetate for preventing pattern collapseTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 17, 2015·3 cites·16 claims
- 3776US2023263068A1Metal Etching Stop Layer in Magnetic Tunnel Junction Memory CellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3875US11682580B2Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·0 cites·20 claims
- 3975US11665971B2Metal etching stop layer in magnetic tunnel junction memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 30, 2023·0 cites·20 claims
- 4075US10163689B2Integrated circuit with conductive line having line-endsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·1 cites·20 claims
- 4175US9570341B2Semiconductor device having air gap structures and method of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 14, 2017·2 cites·20 claims
- 4275US9524902B2Method of forming integrated circuit with conductive line having line-endsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 20, 2016·2 cites·15 claims
- 4375US9412650B2Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 9, 2016·2 cites·20 claims
- 4474US11721624B2Patterning approach for improved via landing profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 4574US10354949B2Air gap structure and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 16, 2019·1 cites·20 claims
- 4674US10170420B2Patterning approach for improved via landing profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·1 cites·20 claims
- 4773US11980040B2Semiconductor device with magnetic tunnel junctionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 7, 2024·0 cites·20 claims
- 4873US10043706B2Mitigating pattern collapseTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 7, 2018·2 cites·17 claims
- 4972US11088021B2Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 10, 2021·0 cites·20 claims
- 5072US10985054B2Interconnect structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 20, 2021·0 cites·20 claims
Showing the top 50 of 89 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →