Inventor · disambiguated record

Cherng-Shiaw Tsai

Also filed as: TSAI CHERNG-SHIAW · TSAI CHERNG-SHIAW JACOB

25 granted patents·17 pending applications·12 citations·filing 2015–2025

92Inventor score

Technology areasH10W H10P

Files withTAIWAN SEMICONDUCTOR MFG CO LTD42

Top patents by PatentIndex Score

42 records

0196US11854963B2Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·3 cites·20 claims
0295US11664237B2Semiconductor device having improved overlay shift toleranceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 30, 2023·4 cites·20 claims
0393US12132000B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 29, 2024·2 cites·20 claims
0487US2025364400A1Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0586US2025357195A1Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
0683US12431386B2Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Sep 30, 2025·0 cites·20 claims
0783US11658092B2Thermal interconnect structure for thermal management of electrical interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 23, 2023·1 cites·20 claims
0882US12463134B2Semiconductor interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 4, 2025·0 cites·20 claims
0981US12205946B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 21, 2025·0 cites·20 claims
1079US12074084B2Heat dispersion layers for double sided interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 27, 2024·0 cites·20 claims
1179US2025046673A1Thermal interconnect structure for thermal management of electrical interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1278US12211700B2Selective removal of an etching stop layer for improving overlay shift toleranceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
1378US12165945B2Thermal interconnect structure for thermal management of electrical interconnect structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
1478US2025336806A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1578US2024347412A1Heat dispersion layers for double sided interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
1676US12484310B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
1775US2025167002A1Selective Removal of an Etching Stop Layer for Improving Overlay Shift ToleranceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
1874US12412831B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 9, 2025·0 cites·20 claims
1974US2024379416A1Semiconductor device having thermally conductive air gap structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2074US2024387364A1Semiconductor interconnection structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2174US2024379413A1Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2274US2024379560A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2374US2024371690A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2474US2024379493A1Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2574US2024379435A1Semiconductor structure having self-aligned conductive structure and method for forming the semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
2673US2025309041A1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
2772US10998225B2Semiconductor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 4, 2021·1 cites·20 claims
2871US12062572B2Semiconductor device having metallization layer with low capacitance and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 13, 2024·0 cites·20 claims
2971US11640928B2Heat dispersion layers for double sided interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 2, 2023·0 cites·20 claims
3070US11923357B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
3170US2025285915A1Semiconductor interconnection structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
3269US12272597B2Semiconductor interconnection structures and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
3369US12094764B2Interconnect structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 17, 2024·0 cites·20 claims
3468US12412804B2Semiconductor structure with improved heat dissipationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·20 claims
3568US12074060B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 27, 2024·0 cites·20 claims
3666US9627215B1Structure and method for interconnectionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 18, 2017·1 cites·20 claims
3764US12431426B2Semiconductor interconnection structures comprising a resistor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 30, 2025·0 cites·20 claims
3864US12249555B2Semiconductor device package including a thermal conductive layer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 11, 2025·0 cites·20 claims
3963US12482703B2Semiconductor device having thermally conductive air gap structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 25, 2025·0 cites·20 claims
4058US10867805B2Selective removal of an etching stop layer for improving overlay shift toleranceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
4154US2024087980A1Etching-damage-free intermetal dielectric layer with thermal dissipation featureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
4251US2024038665A1Interconnection structure and method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →