Inventor · disambiguated record
Chun Hsiung Tsai
Also filed as: TSAI CHUN-HSIUNG
238 granted patents·30 pending applications·773 citations·filing 2005–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD203TAIWAN SEMICONDUCTOR MFG40TSAI CHUN HSIUNG15HUANG YU-LIEN4FORTUNE FROZEN FOODS CO LTD I1
Top patents by PatentIndex Score
268 records- 0199US11329163B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 10, 2022·7 cites·20 claims
- 0298US11404322B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 2, 2022·4 cites·20 claims
- 0398US11251092B2Gate structure of a semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·4 cites·20 claims
- 0498US9508556B1Method for fabricating fin field effect transistor and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 29, 2016·31 cites·20 claims
- 0597US11942552B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 26, 2024·2 cites·20 claims
- 0697US10164048B1Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 25, 2018·14 cites·20 claims
- 0797US9293534B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 22, 2016·27 cites·18 claims
- 0896US11972982B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·2 cites·20 claims
- 0996US11961731B2Method and structure for semiconductor interconnectTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·2 cites·20 claims
- 1096US11855211B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 1196US11688648B2Gate structure of a semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 27, 2023·2 cites·20 claims
- 1296US11515162B2Method of manufacturing a semiconductor device and a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 29, 2022·3 cites·20 claims
- 1396US10686074B2Fin field effect transistor (FinFET) device structure with doped region in source/drain structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·10 cites·20 claims
- 1496US10468500B1FinFET fabrication methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·9 cites·20 claims
- 1596US10153344B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 11, 2018·9 cites·19 claims
- 1696US9768256B2Formation of dislocations in source and drain regions of FinFET devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·10 cites·15 claims
- 1796US9214556B2Self-aligned dual-metal silicide and germanide formationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 15, 2015·23 cites·20 claims
- 1896US9142643B2Method for forming epitaxial featureTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 22, 2015·25 cites·20 claims
- 1996US9029226B2Mechanisms for doping lightly-doped-drain (LDD) regions of finFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 12, 2015·25 cites·19 claims
- 2096US8809175B2Methods of anneal after deposition of gate layersTSAI CHUN HSIUNG·Filed 2011·Granted Aug 19, 2014·27 cites·20 claims
- 2195US9543438B2Contact resistance reduction techniqueTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 10, 2017·16 cites·20 claims
- 2295US9337316B2Method for FinFET deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 10, 2016·16 cites·20 claims
- 2395US9093468B2Asymmetric cyclic depositon and etch process for epitaxial formation mechanisms of source and drain regionsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 28, 2015·21 cites·20 claims
- 2495US8980719B2Methods for doping fin field-effect transistorsTSAI CHUN HSIUNG·Filed 2010·Granted Mar 17, 2015·20 cites·20 claims
- 2594US8536658B2Mechanisms for forming ultra shallow junctionTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Sep 17, 2013·12 cites·20 claims
- 2694US8298925B2Mechanisms for forming ultra shallow junctionWU CHII-MING·Filed 2010·Granted Oct 30, 2012·20 cites·20 claims
- 2794US8278196B2High surface dopant concentration semiconductor device and method of fabricatingHUANG YU-LIEN·Filed 2010·Granted Oct 2, 2012·25 cites·14 claims
- 2893US9502298B2Asymmetric cyclic deposition and etch process for epitaxial formation mechanisms of source and drain regionsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 22, 2016·9 cites·23 claims
- 2993US8723266B2Pinch-off control of gate edge dislocationTSAI CHUN HSIUNG·Filed 2011·Granted May 13, 2014·13 cites·20 claims
- 3092US11769817B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 26, 2023·2 cites·20 claims
- 3192US11195931B2Gate structure, semiconductor device and the method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 7, 2021·2 cites·20 claims
- 3292US11075108B2Mechanism for FinFET well dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 27, 2021·4 cites·20 claims
- 3392US9406546B2Mechanism for FinFET well dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 2, 2016·8 cites·20 claims
- 3492US9184089B2Mechanism of forming a trench structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 10, 2015·7 cites·21 claims
- 3592US8900958B2Epitaxial formation mechanisms of source and drain regionsTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Dec 2, 2014·13 cites·20 claims
- 3692US8853039B2Defect reduction for formation of epitaxial layer in source and drain regionsTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 7, 2014·11 cites·20 claims
- 3791US10651287B2Method for forming source/drain contactsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·4 cites·20 claims
- 3891US9722083B2Source/drain junction formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 1, 2017·9 cites·20 claims
- 3991US9680014B2Semiconductor device including Fin structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 13, 2017·7 cites·17 claims
- 4091US9076762B2Contact structure of semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 7, 2015·7 cites·20 claims
- 4191US8735266B2Mechanisms for forming ultra shallow junctionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 27, 2014·8 cites·20 claims
- 4291US8557692B2FinFET LDD and source drain implant techniqueTSAI CHUN HSIUNG·Filed 2010·Granted Oct 15, 2013·15 cites·18 claims
- 4390US10804395B2Metal-insensitive epitaxy formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 13, 2020·4 cites·20 claims
- 4490US9029912B2Semiconductor substructure having elevated strain material-sidewall interface and method of making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted May 12, 2015·8 cites·20 claims
- 4590US8674453B2Mechanisms for forming stressor regions in a semiconductor deviceTSAI CHUN HSIUNG·Filed 2011·Granted Mar 18, 2014·12 cites·20 claims
- 4690US2025344419A1Interconnect Layout for Semiconductor DeviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4789US11201205B2Interconnect layout for semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 14, 2021·2 cites·20 claims
- 4889US10396156B2Method for FinFET LDD dopingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 27, 2019·4 cites·20 claims
- 4989US9722081B1FinFET device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 1, 2017·4 cites·18 claims
- 5089US9401302B2FinFET fin bending reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jul 26, 2016·6 cites·20 claims
Showing the top 50 of 268 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →