Inventor · disambiguated record
Chun-I Tsai
Also filed as: TSAI CHUN-I
27 granted patents·15 pending applications·35 citations·filing 2013–2025
94Inventor score
Top patents by PatentIndex Score
42 records- 0195US11062941B2Contact conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 13, 2021·3 cites·21 claims
- 0293US10361120B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 23, 2019·8 cites·20 claims
- 0391US11929314B2Interconnect structures including a fin structure and a metal capTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 12, 2024·2 cites·20 claims
- 0486US2025357295A1Interconnect structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0583US12400853B2Method of forming conductive feature including cleaning stepTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Aug 26, 2025·0 cites·20 claims
- 0683US9245797B2Opening fill process and structure formed therebyTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 26, 2016·4 cites·19 claims
- 0783US9219009B2Method of integrated circuit fabricationTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 22, 2015·5 cites·20 claims
- 0882US12148659B2Contact conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·22 claims
- 0982US11521929B2Capping layer for liner-free conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 6, 2022·1 cites·20 claims
- 1082US10580693B2Contact conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 3, 2020·2 cites·20 claims
- 1181US11594609B2Liner-free conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·1 cites·20 claims
- 1281US9978583B2Opening fill process and structures formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 22, 2018·2 cites·20 claims
- 1380US2025359291A1Contact plugs with reduced r/c and the methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1479US11955329B2Method of forming conductive feature including cleaning stepTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 9, 2024·0 cites·20 claims
- 1579US11217524B1Interconnect structure and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 4, 2022·1 cites·20 claims
- 1678US12020981B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 25, 2024·0 cites·20 claims
- 1777US10504834B2Contact structure and the method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·2 cites·20 claims
- 1877US2025343047A1Fin field-effect transistor device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1977US2025357348A1Barrier free tungsten liner in contact plugs and the method forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2076US12057397B2Capping layer for liner-free conductive structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·0 cites·20 claims
- 2176US9624576B2Systems and methods for gap filling improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 18, 2017·3 cites·19 claims
- 2275US11676859B2Contact conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 13, 2023·0 cites·20 claims
- 2375US2024170381A1Interconnect structures and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2475US2024355741A1Capping Layer For Liner-Free Conductive StructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2574US2024297074A1Conductive Feature Formation and StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2673US2025285962A1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2773US2024249977A1Metal adhesion layer to promote metal plug adhesionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2871US11798843B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·0 cites·20 claims
- 2971US11670499B2Method of forming conductive feature including cleaning stepTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 6, 2023·0 cites·20 claims
- 3071US2024413020A1Contact Plugs With Reduced R/C and the Methods of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3170US9627313B2Opening fill process and structure formed therebyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 18, 2017·1 cites·20 claims
- 3270US2024363353A1Fin field-effect transistor device and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3367US11817384B2Interconnect structure and manufacturing method for the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 14, 2023·0 cites·20 claims
- 3467US2024355740A1Barrier Free Tungsten Liner in Contact Plugs and The Method Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3564US12327788B2Gate to source drain interconnectsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 10, 2025·0 cites·20 claims
- 3664US11955379B2Metal adhesion layer to promote metal plug adhesionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 9, 2024·0 cites·21 claims
- 3762US10971396B2Conductive feature formation and structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 6, 2021·0 cites·20 claims
- 3860US11195791B2Method for forming semiconductor contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 7, 2021·0 cites·20 claims
- 3955US2014279186A1Digital wardrobe with recommender systemYAHOO INC·Filed 2013·Application pending·0 cites
- 4054US10283359B2Systems and methods for gap filling improvementTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·0 cites·20 claims
- 4154US2025066899A1Method of physical vapor deposition with intermixing reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4251US2023402366A1Semiconductor device including metal surrounding via contact and method of forming the semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →