Inventor · disambiguated record
Chun-Yang Tsai
Also filed as: TSAI CHUN-YANG
40 granted patents·8 pending applications·142 citations·filing 2011–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD36TAIWAN SEMICONDUCTOR MFG8CHIN ALBERT1TAIWAN SEMICONDCUTOR MFG COMPANY LTD1TSAI CHUN-YANG1
Top patents by PatentIndex Score
48 records- 0197US8869436B2Resistive switching random access memory structure and method to recreate filament and recover resistance windowTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 28, 2014·40 cites·22 claims
- 0296US9019743B2Method and structure for resistive switching random access memory with high reliable and high densityTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Apr 28, 2015·15 cites·20 claims
- 0394US10985316B2Bottom electrode structure in memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 20, 2021·6 cites·20 claims
- 0494US9634134B2Embedded transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 25, 2017·11 cites·20 claims
- 0593US12389814B2High electron affinity dielectric layer to improve cyclingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 12, 2025·1 cites·20 claims
- 0692US11696521B2High electron affinity dielectric layer to improve cyclingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 4, 2023·2 cites·20 claims
- 0792US10700070B2Embedded transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 30, 2020·5 cites·20 claims
- 0891US9053781B2Structure and method for a forming free resistive random access memory with multi-level cellTAIWAN SEMICONDCUTOR MFG COMPANY LTD·Filed 2012·Granted Jun 9, 2015·22 cites·20 claims
- 0989US10748907B2Embedded transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 18, 2020·3 cites·20 claims
- 1084US9893122B2Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·3 cites·20 claims
- 1183US2025344617A1High electron affinity dielectric layer to improve cyclingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1282US10461126B2Memory circuit and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 29, 2019·4 cites·20 claims
- 1382US9230647B2Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Jan 5, 2016·4 cites·20 claims
- 1481US9991368B2Vertical BJT for high density memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 5, 2018·4 cites·20 claims
- 1581US9361980B1RRAM array using multiple reset voltages and method of resetting RRAM array using multiple reset voltagesTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 7, 2016·6 cites·20 claims
- 1681US2025365976A1Memory Structure And Method Of Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1780US10879391B2Wakeup-free ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·2 cites·20 claims
- 1879US9178040B2Innovative approach of 4F2 driver formation for high-density RRAM and MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Nov 3, 2015·5 cites·19 claims
- 1976US2025336752A1Techniques for heat dispersion in 3d integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2074US10262731B2Device and method for forming resistive random access memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 16, 2019·3 cites·20 claims
- 2174US2023255124A1Bottom electrode structure in memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2271US11631810B2Bottom electrode structure in memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 18, 2023·0 cites·20 claims
- 2370US10062735B2Innovative approach of 4F2 driver formation for high-density RRAM and MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 28, 2018·1 cites·20 claims
- 2469US2023197847A1Wakeup-free ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2568US12482717B2Techniques for heat dispersion in 3D integrated circuitTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 2668US9472596B2Metal line connection for improved RRAM reliability, semiconductor arrangement comprising the same, and manufacture thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 18, 2016·1 cites·20 claims
- 2766US9153672B2Vertical BJT for high density memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted Oct 6, 2015·2 cites·20 claims
- 2865US11594632B2Wakeup-free ferroelectric memory deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 28, 2023·0 cites·20 claims
- 2965US10879310B2Memory circuit and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
- 3065US10879309B2Memory circuit and formation method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
- 3163US2023292525A1Memory structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3259US11107528B2Multi-step reset technique to enlarge memory windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 31, 2021·0 cites·20 claims
- 3357US8953370B2Memory cell with decoupled read/write pathTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Feb 10, 2015·1 cites·20 claims
- 3457US2025234793A1Semiconductor structure including memory unit and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3555US9343151B1Resistive random access memory and method of resetting a resistive random access memoryTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted May 17, 2016·1 cites·20 claims
- 3652US11315931B2Embedded transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 3752US9520446B2Innovative approach of 4F2 driver formation for high-density RRAM and MRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 13, 2016·0 cites·19 claims
- 3851US9286979B2Method and structure for resistive switching random access memory with high reliable and high densityTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Mar 15, 2016·0 cites·20 claims
- 3950US2014349472A1Flash memoryUNIV NAT CHIAO TUNG·Filed 2014·Application pending·0 cites
- 4049US10861547B1Multi-step reset technique to enlarge memory windowTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 4148US8836009B2Flash memoryCHIN ALBERT·Filed 2011·Granted Sep 16, 2014·0 cites·11 claims
- 4247US9286973B2Device and method for forming resistive random access memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Mar 15, 2016·0 cites·9 claims
- 4345US9543404B2Vertical BJT for high density memoryTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 10, 2017·0 cites·20 claims
- 4444US9576656B2Device and method for setting resistive random access memory cellTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Feb 21, 2017·0 cites·14 claims
- 4544US9530462B2Memory cell with decoupled read/write pathTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 27, 2016·0 cites·20 claims
- 4642US9087577B2Hybrid memoryTAIWAN SEMICONDUCTOR MFG·Filed 2012·Granted Jul 21, 2015·0 cites·20 claims
- 4732US9576651B2RRAM and method of read operation for RRAMTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·0 cites·16 claims
- 4830US9680091B2Structure and method for a complimentary resistive switching random access memory for high density applicationTSAI CHUN-YANG·Filed 2012·Granted Jun 13, 2017·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →